Diodes MMDT4146-7-F Complementary npn / pnp small signal surface mount transistor Datasheet

MMDT4146
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Complementary Pair
One 4124-Type NPN
One 4126-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C2
B1
E1
E1, B1, C1 = PNP4126 Section
E2, B2, C2 = NPN4124 Section
E2
Top View
Maximum Ratings, NPN 4124 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
C1
@TA = 25°C unless otherwise specified
(Note 1)
Maximum Ratings, PNP 4126 Section
B2
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Symbol
VCBO
VCEO
VEBO
IC
Value
-25
-25
-4
-200
Unit
V
V
V
mA
Symbol
PD
RθJA
Value
200
625
Unit
mW
°C/W
@TA = 25°C unless otherwise specified
(Note 1)
Thermal Characteristics – Total Device
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Notes:
1.
2.
3.
4.
5.
(Note 1, 2)
(Note 1)
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4146
Document number: DS30162 Rev. 11 - 2
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January 2009
© Diodes Incorporated
MMDT4146
Electrical Characteristics, NPN 4124 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
25
5.0
⎯
⎯
⎯
⎯
⎯
50
50
V
V
V
nA
nA
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCB = 20V, IE = 0V
VEB = 3.0V, IC = 0V
360
⎯
0.30
0.95
⎯
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
Cobo
Cibo
⎯
⎯
4.0
8.0
pF
pF
Small Signal Current Gain
hfe
120
480
⎯
Current Gain-Bandwidth Product
fT
300
⎯
MHz
NF
⎯
5.0
dB
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Noise Figure
Electrical Characteristics, PNP 4126 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
V
V
Test Condition
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-25
-25
-4.0
⎯
⎯
⎯
⎯
⎯
-50
-50
V
V
V
nA
nA
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
360
⎯
-0.40
-0.95
⎯
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
Cobo
Cibo
⎯
⎯
4.5
10
pF
pF
Small Signal Current Gain
hfe
120
480
⎯
Current Gain-Bandwidth Product
fT
250
⎯
MHz
NF
⎯
4.0
dB
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Noise Figure
Notes:
V
V
Test Condition
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
6. Short duration pulse test used to minimize self-heating effect.
MMDT4146
Document number: DS30162 Rev. 11 - 2
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January 2009
© Diodes Incorporated
MMDT4146
1,000
hFE, DC CURRENT GAIN
300
250
200
150
100
1
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
0
25
10
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
RθJA = 625°C/W
50
1
0.1
0.01
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
100
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
1,000
1.0
0.9
0.8
0.7
0.6
IC
IB= 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
1,000
hFE, DC CURRENT GAIN
CAPACITANCE (pF)
100
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
350
10
1
1
100
10
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
0.1
MMDT4146
Document number: DS30162 Rev. 11 - 2
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100
10
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
1,000
January 2009
© Diodes Incorporated
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
MMDT4146
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1
0.1
0.01
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (NPN-4124)
10
1
0.1
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current (NPN-4124)
CAPACITANCE (pF)
15
10
5
0
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics (NPN-4124)
Ordering Information
(Note 7)
Part Number
MMDT4146-7-F
Notes:
Case
SOT-363
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K12
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
MMDT4146
Document number: DS30162 Rev. 11 - 2
2001
M
Mar
3
2002
N
2003
P
Apr
4
2004
R
May
5
2005
S
K12 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2006
T
2007 2008
U
V
Jun
6
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Jul
7
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
January 2009
© Diodes Incorporated
MMDT4146
Package Outline Dimensions
A
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
F
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMDT4146
Document number: DS30162 Rev. 11 - 2
5 of 5
www.diodes.com
January 2009
© Diodes Incorporated
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