AUK DP050S Pnp silicon transistor Datasheet

DP050S
Semiconductor
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)= -0.08V Typ. @IC /IB =-100mA/-10mA)
• Suitable for low voltage large current drivers
• Complementary pair with DN050S
• Switching Application
Ordering Information
Type NO.
Marking
DP050S
Package Code
P02
SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
KST-2116-000
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
PIN Connections
1. Base
2. Emitter
3. Collector
1
DP050S
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25° C)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50µA, I E =0
-15
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-12
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE =-50µA, IC =0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-12V, I E =0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB =-5V, IC =0
-
-
-0.1
µA
h FE1
VCE=-1V, IC =-100mA
200
-
450
-
h FE2
VCE=-1 V, IC =-500mA
70
-
-
-
DC current gain
Collector-Emitter saturation voltage
VCE(sat)
IC=-100mA, IB =-10mA
-
-
-0.25
V
Base-Emitter saturation voltage
VBE(sat)
IC=-100mA, IB =-10mA
-
-
-1.2
V
VCE=-5V, IC =-20mA
-
100
-
MHz
VCB=-10V, I E =0, f=1MHz
-
8.0
-
pF
Transition frequency
Collector output capacitance
fT
C ob
KST-2116-000
2
DP050S
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 3 hFE - IC
Fig. 2 IC - VBE
Fig. 4 IC - VCE
Fig. 5 VCE(sat) - IC
KST-2116-000
3
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