DP050S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.08V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN050S • Switching Application Ordering Information Type NO. Marking DP050S Package Code P02 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2116-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 DP050S Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -500 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, I E =0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE =-50µA, IC =0 -5 - - V Collector cut-off current ICBO VCB=-12V, I E =0 - - -0.1 µA Emitter cut-off current IEBO VEB =-5V, IC =0 - - -0.1 µA h FE1 VCE=-1V, IC =-100mA 200 - 450 - h FE2 VCE=-1 V, IC =-500mA 70 - - - DC current gain Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB =-10mA - - -0.25 V Base-Emitter saturation voltage VBE(sat) IC=-100mA, IB =-10mA - - -1.2 V VCE=-5V, IC =-20mA - 100 - MHz VCB=-10V, I E =0, f=1MHz - 8.0 - pF Transition frequency Collector output capacitance fT C ob KST-2116-000 2 DP050S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 3 hFE - IC Fig. 2 IC - VBE Fig. 4 IC - VCE Fig. 5 VCE(sat) - IC KST-2116-000 3