IXYS IXFX73N30Q Hiperfet power mosfets q-class Datasheet

IXFX 73N30Q
IXFK 73N30Q
Q-CLASS
VDSS = 300 V
ID25 = 73 A
Ω
RDS(on) = 42 mΩ
Single MOSFET Die
trr ≤ 250 µs
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
PLUS 247TM (IXFX)
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
73
292
73
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque (TO-264)
Weight
PLUS 247
TO-264
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
300
V
VGS(th)
VDS = VGS, ID = 4mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
±100 nA
IDSS
VDS = VDSS 0.8 VDSS
VGS = 0 V
100 µA
2 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2001 IXYS All rights reserved
(TAB)
D
TO-264 AA (IXFK)
G
D
TL
0.4/6 Nm/lb.in.
6
10
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 125°C
G
42 mΩ
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low RDS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
PLUS 247TM package for clip or spring
mounting
l
Space savings
l
High power density
l
98870 (12/01)
IXFK 73N30Q
IXFX 73N30Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 ID25
Note 1
30
Ciss
S
6400
pF
1340
pF
Crss
340
pF
td(on)
37
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
47
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
36
ns
td(off)
RG = 1 Ω (External)
82
ns
12
ns
190
nC
51
nC
78
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.26
RthJC
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
trr
QRM
K/W
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
IRM
73
A
292
A
1.5
V
250
ns
0.8
µC
7
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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