HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz AMPLIFIERS - SMT 5 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: Saturated Output Power: +33 dBm @ 20% PAE • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios DC Supply: +7.0 V @ 1340 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 Output IP3: +41 dBm • Space Functional Diagram General Description The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7.0V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Min. Frequency Range Typ. Max. Min. 6-8 Gain 16 Max. 18 dB dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB 33 dBm 33 dBm 41 41 dBm 1340 1340 mA 30 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 32 32.5 [2] Supply Current (Idd) 30 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm 5 - 598 GHz 0.05 Output Power for 1 dB Compression (P1dB) 15 Units 0.05 Gain Variation Over Temperature 19 Typ. 6 - 9.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 20 26 15 24 22 S21 S11 S22 5 0 -5 20 18 16 -10 14 -15 12 -20 10 +25C +85C -40C 8 -25 4 5 6 7 8 9 10 11 6 12 6.5 7 0 -5 -5 -10 -15 +25C +85C -40C 8.5 9 9.5 10 -10 -15 +25C +85C -40C -20 -25 -25 4 5 6 7 8 9 10 11 12 4 5 6 FREQUENCY (GHz) 35 34 34 33 33 Psat (dBm) 36 35 32 31 +25C +85C -40C 29 8 9 10 11 12 9 9.5 10 Psat vs. Temperature 36 30 7 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 8 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -20 7.5 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - SMT 28 GAIN (dB) RESPONSE (dB) 25 10 5 Gain vs. Temperature Broadband Gain & Return Loss 32 31 30 +25C +85C -40C 29 28 28 27 27 26 26 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 599 HMC591LP5 / 591LP5E v02.0107 P1dB vs. Current Psat vs. Current 36 36 35 35 34 34 33 33 Psat (dBm) P1dB (dBm) AMPLIFIERS - SMT 5 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 32 31 30 29 31 30 28 27 27 26 26 6 6.5 7 7.5 8 8.5 9 9.5 10 6 FREQUENCY (GHz) 7.5 8 8.5 9 9.5 10 35 Pout(dBm), GAIN (dB), PAE(%) 44 42 40 OIP3 (dBm) 7 Power Compression @ 8 GHz, 7V @ 1340 mA 46 38 36 34 +25C +85C -40C 32 30 28 26 6 6.5 7 7.5 8 8.5 9 9.5 30 25 Pout Gain PAE 20 15 10 5 0 -14 -12 -10 -8 -6 -4 -2 0 10 FREQUENCY (GHz) 2 4 6 8 10 12 14 16 18 INPUT POWER (dBm) Output IM3, 7V @ 940 mA Output IM3, 7V @ 1340 mA 100 100 90 90 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 80 70 60 50 60 50 40 40 30 30 20 20 10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pin/Tone (dBm) 0 2 4 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 80 IM3 (dBc) 70 IM3 (dBc) 6.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 5 - 600 940 mA 1140 mA 1340 mA 29 940 mA 1140 mA 1340 mA 28 32 6 8 10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pin/Tone (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 6 8 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz 34 32 30 28 Gain P1dB Psat 26 24 22 20 18 16 940 1140 34 32 30 28 Gain P1dB Psat 26 24 22 20 18 16 6.5 1340 7 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 1340 mA 10 -10 9.5 POWER DISSIPATION (W) ISOLATION (dB) Power Dissipation 0 -20 +25C +85C -40C -30 7.5 Vdd SUPPLY VOLTAGE (Vdc) AMPLIFIERS - SMT 36 GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 36 5 -40 -50 -60 -70 9 8.5 8 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 7.5 7 6.5 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 6 -14 -12 -10 -8 FREQUENCY (GHz) Absolute Maximum Ratings -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 1350 RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 Channel Temperature 175 °C +7.5 1330 Continuous Pdiss (T= 75 °C) (derate 104.3 mW/°C above 75 °C) 10.43 W Thermal Resistance (channel to package bottom) 9.59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 601 HMC591LP5 / 591LP5E v02.0107 Outline Drawing AMPLIFIERS - SMT 5 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC591LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC591LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H591 XXXX [2] H591 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 602 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pad Number Function Description 1, 2, 6 - 8, 10 - 12, 14, 15, 17 - 19, 23, 24, 26, 27, 29 - 31 N/C Not connected. 3, 5, 20, 22 GND Package bottom has an exposed metal paddle that must be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 13, 16, 25, 28, 32 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - SMT 5 Pad Descriptions 5 - 603 HMC591LP5 / 591LP5E v02.0107 AMPLIFIERS - SMT 5 5 - 604 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Application Circuit Component Value C1 - C6 100pF C7 - C12 2.2μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 108190 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C6 100pF Capacitor, 0402 Pkg. C7 - C12 2.2 μF Capacitor, 1206 Pkg U1 HMC591LP5 / HMC591LP5E PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 605