TEL BDX53A Npn plastic power transistor Datasheet

Transys
Electronics
L I M I T E D
TO-220 Plastic Package
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
BDX53, 53A, 53B, 53C
BDX54, 54A, 54B, 54C
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
B
C
E
A
O
3
J
D
G
M
All dimin sions in mm.
K
L
N
1 2
O
H
F
DIM
MIN .
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
3
MAX.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 3 A; IB = 12 mA
D.C. current gain
IC = 3 A; VCE = 3 V
VCBO
VCEO
IC
Ptot
Tj
53
54
max. 45
max. 45
max.
max.
max.
VCEsat
max.
2.0
hFE
min.
750
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
53
54
max. 45
max. 45
max.
53A 53B
54A 54B
60
80
60
80
8.0
60
150
53A 53B
54A 54B
60
80
60
80
5.0
53C
54C
100
100
V
V
A
W
°C
V
53C
54C
100
100
V
V
V
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
Collector current
Collector current (Peak value)
Base current
Total power dissipation upto TC=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
IC
ICM
IB
Ptot
Tj
Tstg
max.
max.
max.
max.
max.
max.
2.08
7.0
Rth j–c
Rth j–a
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCB = 45 V
IB = 0; VCB = 60 V
IB = 0; VCB = 80 V
IB = 0; VCB = 100 V
IB = 0; VCE = 22 V
IB = 0; VCE = 30 V
IB = 0; VCE = 40 V
IB = 0; VCE = 50 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3 A; IB = 12 mA
D.C. current gain
IC = 3 A; VCE = 3 V
Small signal current gain
IC = 3 A; VCE = 4 V; f = 1.0 MHz
Output capacitance f = 1.0 MHz
NPN
IE = 0; VCB = 10 V
PNP
Parallel-diode forward voltage
IF = 3 A
IF = 8 A
8.0
12
0.2
60
0.48
150
–65 to +150
53
54
ICBO
ICBO
ICBO
ICBO
ICEO
ICEO
ICEO
ICEO
max. 0.2
max. –
max. –
max. –
max. 0.5
max. –
max. –
max. –
IEBO
max.
VCEO(sus)* min. 45
VCBO
min. 45
VEBO
min.
A
A
A
W
W/°C
°C
ºC
°C/W
°C/W
53A 53B 53C
54A 54B 54C
–
0.2
–
–
–
0.5
–
–
–
–
0.2
–
–
–
0.5
–
–
–
–
0.2
–
–
–
0.5
2.0
60
60
5.0
mA
mA
mA
mA
mA
mA
mA
mA
mA
80
80
100
100
V
V
V
VCEsat*
VBEsat*
max.
max.
2.0
2.5
hFE*
min.
750
|h fe|
min.
4.0
Co
Co
max.
max.
300
200
pF
pF
VF
VF
max.
typ.
2.5
2.5
V
V
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
V
V
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