SO T8 83 B NX7002BKMB 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2kV HBM 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 350 mA - 2.2 2.8 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 200 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number NX7002BKMB Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code NX7002BKMB 0101 0111 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 350 mA VGS = 10 V; Tamb = 100 °C [1] - 200 mA - 0.9 A [2] - 350 mW [1] - 680 mW - 3100 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 200 mA Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature NX7002BKMB Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 3 December 2014 25 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015212 1 (1) Limit RDSon = VDS/ID ID (A) 10-1 (2) (3) (4) (5) 10-2 (6) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 10 µs (2) tp = 1 ms (3) DC; Tsp = 25 °C (4) tp = 10 ms (5) tp = 100 ms 2 (6) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] NX7002BKMB Product data sheet Min Typ Max Unit [1] - 314 360 K/W [2] - 159 180 K/W - 35 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015213 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 0.01 0 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-015215 103 Zth(j-a) (K/W) duty cycle = 1 102 0.50 0.25 0.75 0.33 0.20 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.1 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -0.3 µA VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.2 2.8 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C - 4.5 5.7 Ω VGS = 5 V; ID = 200 mA; Tj = 25 °C - 2.5 3.2 Ω RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 200 mA; Tj = 25 °C - 600 - mS RG internal gate resistance (AC) f = 2.5 MHz - 2.5 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 30 V; ID = 200 mA; VGS = 10 V; - 1 - nC QGS gate-source charge Tj = 25 °C - 0.12 - nC QGD gate-drain charge - 0.18 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 23.6 - pF Coss output capacitance Tj = 25 °C - 4.6 - pF Crss reverse transfer capacitance - 3 - pF td(on) turn-on delay time VDS = 50 V; ID = 200 mA; VGS = 10 V; - 4.7 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 4.3 - ns td(off) turn-off delay time - 6.9 - ns tf fall time - 2.9 - ns - 0.87 1.2 V Source-drain diode VSD source-drain voltage NX7002BKMB Product data sheet IS = 200 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-014131 1 ID (A) 4.5 V 0.8 aaa-014132 10-3 VGS = 10 V ID (A) 3.5 V 10-4 0.6 (1) 3.0 V 0.4 Fig. 7. (3) 10-5 0.2 0 (2) 2.5 V 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 8. aaa-014133 8 2.5 V RDSon (Ω) 3.0 V aaa-014134 RDSon (Ω) 4.0 V 6 3 Sub-threshold drain current as a function of gate-source voltage 8 3.5 V VGS (V) 6 4.5 V (1) 4 4 (2) VGS = 10 V 2 0 Fig. 9. 0 0.2 0.4 0.6 ID (A) 2 0 0.8 0 2 Tj = 25 °C ID = 0.2 A Drain-source on-state resistance as a function of drain current; typical values (1) Tj = 150 °C 4 6 8 10 VGS (V) (2) Tj = 25 °C Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-014135 0.6 aaa-014136 2.5 a ID (A) 2.0 0.4 1.5 (2) 1.0 0.2 0.5 (1) 0 0 1 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-014137 2.5 VGS(th) (V) C (pF) (1) 2.0 (1) 10 (2) .1.5 aaa-014138 102 (2) (3) 1.0 (3) 1 0.5 0 -60 0 60 120 Tj (°C) 10-1 10-1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 13. Gate-source threshold voltage as a function of junction temperature NX7002BKMB 10 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-014139 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 Fig. 16. MOSFET transistor: Gate charge waveform definitions 0.8 1.0 QG (nC) ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-014140 0.20 IS (A) 0.15 (1) 0.10 0.05 (2) 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 17. Source current as a function of source-drain voltage; typical values NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm L (2x) SOT883B L1 2 b (2x) 3 e b1 1 e1 A1 A E D 0 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b b1 D E e e1 L L1 max 0.40 0.04 0.20 0.55 0.65 1.05 0.30 0.30 nom 0.37 0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25 min 0.34 0.12 0.47 0.55 0.95 0.22 0.22 Note 1. Including plating thickness Outline version sot883b_po References IEC JEDEC JEITA European projection Issue date 11-11-02 12-01-03 SOT883B Fig. 19. Package outline DFN1006B-3 (SOT883B) NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX7002BKMB v.2 20141203 Product data sheet - NX7002BKMB v.1 Modification: • NX7002BKMB v.1 20141001 Product data sheet - - NX7002BKMB Product data sheet Figure 3 updated All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 16 NX7002BKMB NXP Semiconductors 60 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 December 2014 NX7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. 3 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 16