NVMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 2.3 mW @ 10 V 140 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 140 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State PD Operating Junction and Storage Temperature Source Current (Body Diode) N−CHANNEL MOSFET A 29 MARKING DIAGRAM 21 PD TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) W 83 42 ID TA = 100°C TA = 25°C G (4) 99 TC = 100°C TA = 25°C D (5,6) W 3.7 D 1.8 1 IDM 900 A TJ, Tstg −55 to + 175 °C IS 92 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 12 A) EAS 220 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 5C442N XXXXXX = (NVMFS5C442N) or XXXXXX = 442NWF XXXXXX = (NVMFS5C442NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State Parameter RqJC 1.8 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 March, 2017 − Rev. 3 1 Publication Order Number: NVMFS5C442N/D NVMFS5C442N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15.2 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −7.7 VGS = 10 V gFS ID = 50 A VDS = 15 V, ID = 50 A 1.9 V mV/°C 2.3 92 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2100 VGS = 0 V, f = 1 MHz, VDS = 25 V 1100 pF 40 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 6.6 Gate−to−Source Charge QGS 11 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 11 VGS = 10 V, VDS = 20 V; ID = 50 A 32 nC 4.7 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 50 ns 23 18 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.83 TJ = 125°C 0.71 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 43 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 22 ns 22 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C442N TYPICAL CHARACTERISTICS 140 5.6 V 6V 120 VDS = 10 V 120 5.2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 140 10 V to 7 V 100 80 VGS = 4.8 V 60 40 0.4 0.8 1.6 1.2 2.0 40 TJ = 125°C TJ = −55°C 3.0 4.0 6.0 5.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C IDS = 50 A 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4 5 6 7 8 9 10 2.50 TJ = 25°C VGS = 10 V 2.25 2.00 1.75 1.50 1.25 1.00 0 10 20 30 40 50 60 80 70 90 100 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.8 1.E−04 VGS = 10 V ID = 50 A 1.6 IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = 25°C 60 0 2.0 2.8 2.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 5.0 0.0 80 20 20 0 100 1.4 1.2 1.0 TJ = 150°C 1.E−05 TJ = 125°C 1.E−06 TJ = 85°C 1.E−07 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1.E−08 0 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C442N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1E+4 C, CAPACITANCE (pF) CISS 1E+3 COSS 1E+2 1E+1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 30 35 12 QT 10 8 6 QGD QGS 4 VDS = 20 V ID = 50 A TJ = 25°C 2 0 40 0 10 30 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (A) t, TIME (ns) VGS = 10 V VDS = 20 V ID = 50 A 100 tr tf td(off) td(on) 10 1 1 10 TJ = 150°C 10 TJ = −55°C TJ = 125°C TJ = 25°C 1 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms IPEAK (A) IDS (A) 100 1 ms dc TJ(initial) = 25°C 10 TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 1 10 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NVMFS5C442N TYPICAL CHARACTERISTICS 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NVMFS5C442NL 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C442NT1G 5C442N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C442NWFT1G 442NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C442NT3G 5C442N DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5C442NWFT3G 442NWF DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel NVMFS5C442NAFT1G 5C442 DFN5 (Pb−Free) 1500 / Tape & Reel 442NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C442NWFAFT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C442N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c 2X DETAIL A 0.495 4.560 2X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.530 e/2 e L 1 3.200 4 4.530 K E2 1.330 2X PIN 5 (EXPOSED PAD) L1 M 0.905 1 0.965 G 4X D2 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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