IRFH8321PbF V DS V gs max RDS(on) max 30 V ± 20 V 4.9 (@V GS = 10V) m (@V GS = 4.5V) 6.8 Qg typ. 19.4 nC i A ID 25 (@Tc(Bottom) = 25°C) HEXFET® Power MOSFET PQFN 5X6 mm Applications Synchronous MOSFET for high frequency buck converters Features Low Thermal Resistance to PCB (< 2.3°C/W) Low Profile (<1.2mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFH8321TRPBF PQFN 5mm x 6mm Benefits Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Note Absolute Max imum Ratings V GS Pa ram ete r Gate-to-Source Voltage Ma x . ± 20 ID @ TA = 25°C Continuous Drain Current, V GS @ 10V 21 ID @ TA = 70°C Continuous Drain Current, V GS @ 10V 17 ID @ TC (Bottom) = 25°C Continuous Drain Current, V GS @ 10V 83 ID @ TC (Bottom) = 100°C Continuous Drain Current, V GS @ 10V 52 ID @ TC = 25°C IDM P D @TA = 25°C P D @TC (Bottom) = 25°C Continuous Drain Current, V GS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current g Power Dissipation g Power Dissipation c g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range hi hi 25i Units V A 332 3.4 54 0.027 -55 to + 150 W W /°C °C Notes through are on page 9 1 www.irf.com © 2012 International Rectifier August 3, 2012 IRFH8321PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage BV DSS BV DSS/ TJ RDS(on) Min. 30 Typ. ––– Max. ––– Breakdown Voltage Temp. Coefficient ––– 19.7 ––– Static Drain-to-Source On-Resistance ––– 3.9 4.9 ––– 5.4 6.8 Conditions V GS = 0V, ID = 250μA Units V mV/°C Reference to 25°C, ID = 1.0mA V GS = 10V, ID = 20A m V GS = 4.5V, ID = 16A VGS(th) Gate Threshold Voltage 1.2 1.7 2.2 V V GS(th) IDSS Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 68 ––– ––– S Qg Total Gate Charge ––– 39 59 nC Qg IGSS nA Total Gate Charge ––– 19.4 29.1 Pre-Vth Gate-to-Source Charge ––– 5.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– Qgd Gate-to-Drain Charge ––– 6.7 ––– Qgodr Gate Charge Overdrive ––– 5.8 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.6 ––– Qoss Output Charge ––– 16.7 ––– nC RG Gate Resistance ––– 0.9 2.7 Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 20 ––– t d(of f ) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 6.8 ––– Ciss Input Capacitance ––– 2600 ––– Coss Output Capacitance ––– 530 ––– Crss Reverse Transfer Capacitance ––– 270 ––– V DS = V GS, ID = 50μA V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, TJ = 125°C Qgs1 t d(on) e e V GS = 20V V GS = -20V V DS = 10V, ID = 20A V GS = 10V, V DS = 15V, ID = 20A V DS = 15V nC V GS = 4.5V ID = 20A V DS = 16V, V GS = 0V V DD = 15V, VGS = 4.5V ns ID = 20A RG=1.8 V GS = 0V pF V DS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage c Typ. ––– Max. 93 Units mJ ––– 20 A Min. Typ. Max. ––– ––– 25 ––– ––– 332 ––– ––– 1.0 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V i Units A D G S e t rr Reverse Recovery Time ––– 12 18 ns TJ = 25°C, IF = 20A, VDD = 15V Qrr Reverse Recovery Charge ––– 20 30 nC di/dt = 500 A/μs t on Forward Turn-On Time e Time is dominated by parasitic Inductance Thermal Resistance RqJC (Bottom) Junction-to-Case RqJC (Top) Junction-to-Case f f Parameter g Junction-to-Ambient g Junction-to-Ambient RqJA RqJA (<10s) 2 www.irf.com © 2012 International Rectifier Typ. ––– Max. 2.3 Units ––– 31 °C/W ––– 37 ––– 25 August 3, 2012 IRFH8321PbF 1000 1000 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.75V 2.5V 100 BOTTOM 100 10 60μs PULSE WIDTH Tj = 25°C BOTTOM 10 2.5V 60μs PULSE WIDTH 2.5V Tj = 150°C 1 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C TJ = 25°C 10 VDS = 15V 60μs PULSE WIDTH 1.0 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd 10000 Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss Crss 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.75V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP www.irf.com © 2012 International Rectifier 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage August 3, 2012 IRFH8321PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 1msec 10 Limited by Source Bonding Technology i 1 VGS = 0V DC 0.1 1.0 0.0 0.5 1.0 1.5 2.0 0.1 2.5 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 100 Limited By Source Bonding Technology VGS(th) , Gate threshold Voltage (V) 2.6 80 ID, Drain Current (A) 10msec Tc = 25°C Tj = 150°C Single Pulse i 60 40 20 2.4 2.2 2.0 1.8 1.6 ID = 50μA 1.4 ID = 250μA ID = 1.0mA 1.2 ID = 1.0A 1.0 0.8 0.6 0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2012 International Rectifier August 3, 2012 16 400 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFH8321PbF ID = 20A 14 12 10 8 T J = 125°C 6 4 T J = 25°C 2 0 ID 4.8A 8.9A BOTTOM 20A TOP 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 5 www.irf.com © 2012 International Rectifier August 3, 2012 IRFH8321PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG V DD dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor InductorCurrent Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS V20V GS tp A 0.01 I AS Fig 16a. Unclamped Inductive Test Circuit RD V DS VGS Fig 16b. Unclamped Inductive Waveforms VDS 90% D.U.T. RG + - V DD V10V GS 10% VGS Pulse Width µs Duty Factor td(on) Fig 17a. Switching Time Test Circuit tr t d(off) tf Fig 17b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2012 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform August 3, 2012 IRFH8321PbF PQFN 5x6 Outline "E" Package Details For footprint and stencil design recommendations, please refer to application note: For PQFN inspection techniques, please refer to application note: AN-1136 AN-1154 PQFN 5x6 Outline "E" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2012 International Rectifier August 3, 2012 IRFH8321PbF PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) TR1 OPTION (QTY 400) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MIN MIN MAX MAX MAX A 6.988 12.972 7.028 329.5 330.5 178.5 13.011 177.5 B 0.823 0.823 0.846 20.9 20.9 0.846 21.5 21.5 C 0.520 0.504 0.543 12.8 13.8 13.5 13.2 0.532 D 0.075 0.067 0.091 0.091 1.7 2.3 2.3 1.9 E 2.350 3.819 2.598 97 66 99 65 3.898 F Ref 12 17.4 Ref 0.512 G 0.512 0.571 13 13 0.571 14.5 14.5 8 www.irf.com © 2012 International Rectifier August 3, 2012 IRFH8321PbF Qualification information† Qualification level Moisture Sensitivity Level Cons umer†† (per JE DE C JE S D47F PQFN 5mm x 6mm RoHS compliant ††† guidelines ) MS L1 (per JE DE C J-S TD-020D††† ) Yes Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.46mH, RG = 50, IAS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by Source Bonding Technology. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9 www.irf.com © 2012 International Rectifier August 3, 2012