Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 105 50 230 A A A IA EAS TC = 25°C TC = 25°C 40 750 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 100 @VCE ≤ VCES A PC TC = 25°C 625 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z z z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC z V 4.5 V 25 250 μA μA ±100 nA 3.0 V V z z z z TJ = 125°C IGES z = 50A, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 2.5 3.2 High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100343(05/11) IXYH50N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 RthJC RthCS Notes: TO-247 (IXYH) Outline 37 S 2770 195 83 pF pF pF 143 17 60 nC nC nC 24 50 2.58 240 57 1.20 ns ns mJ ns ns mJ 2.00 25 57 5.14 274 98 1.47 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH50N120C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 100 VGE = 15V 13V 11V 10V 9V 90 80 11V 200 8V 60 7V 50 40 6V 30 20 10V 150 9V 100 8V 7V 50 10 5V 0 6V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 20 25 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 30 2.2 VGE = 15V 13V 11V 10V 9V 80 70 VGE = 15V 2.0 1.8 VCE(sat) - Normalized 90 8V 60 7V 50 40 30 6V I C = 100A 1.6 1.4 I 1.2 C = 50A 1.0 0.8 20 I C = 25A 0.6 10 5V 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -50 6 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 7.5 TJ = 25ºC 90 6.5 80 70 I 4.5 C IC - Amperes 5.5 VCE - Volts 15 VCE - Volts 100 IC - Amperes 13V 12V 250 IC - Amperes IC - Amperes 70 VGE = 15V = 100A 3.5 60 50 40 TJ = 125ºC 25ºC - 40ºC 30 50A 20 2.5 10 25A 1.5 5 6 7 8 0 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 2.5 3 3.5 4 4.5 5 5.5 VGE - Volts 6 6.5 7 7.5 8 IXYH50N120C3 Fig. 8. Gate Charge Fig. 7. Transconductance 60 16 TJ = - 40ºC 50 VCE = 600V 14 I C = 50A I G = 10mA 40 25ºC VGE - Volts g f s - Siemens 12 125ºC 30 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 100 80 1,000 IC - Amperes Capacitance - PicoFarads 90 Cies Coes 100 70 60 50 40 30 Cres 20 f = 1 MHz 10 10 0 5 10 15 20 25 30 35 40 0 200 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH50N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 4 24 Eoff Eon - --- 3.5 TJ = 125ºC , VGE = 15V 5 12 2 I 8 C = 40A 1 Eoff - MilliJoules Eoff - MilliJoules 3 15 20 25 TJ = 125ºC 8 TJ = 25ºC 1.5 6 1 4 0.5 2 0 0 20 30 30 40 RG - Ohms 14 VCE = 600V 8 2.0 6 1.5 4 I C = 40A 1.0 50 75 0 125 100 120 600 100 I 80 I C 300 200 5 10 15 160 340 280 80 260 60 240 TJ = 25ºC 40 220 20 200 0 180 50 60 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 300 RG = 5Ω , VGE = 15V VCE = 600V t f i - Nanoseconds 100 td(on) - - - - 120 I C = 40A 100 280 260 80 240 I C = 80A 60 220 40 200 20 25 50 75 TJ - Degrees Centigrade 100 180 125 t d(off) - Nanoseconds 300 TJ = 125ºC 40 140 320 VCE = 600V 30 30 320 tfi t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V 20 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 360 120 20 RG - Ohms 180 140 500 400 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi = 80A = 40A TJ - Degrees Centigrade 160 C 60 2 0.5 25 t f i - Nanoseconds 2.5 700 VCE = 600V t d(off) - Nanoseconds 10 I C = 80A td(off) - - - - TJ = 125ºC, VGE = 15V 140 12 3.0 80 800 tfi Eon - MilliJoules Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 3.5 70 160 16 4.0 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.5 Eon 50 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 10 2 0 10 12 2.5 4 0 14 Eon - MilliJoules 16 Eon - MilliJoules 4 ---- VCE = 600V 3 I C = 80A Eon RG = 5Ω , VGE = 15V 20 VCE = 600V 5 16 Eoff IXYH50N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 160 75 tri td(on) - - - - 140 TJ = 125ºC, VGE = 15V 200 = 80A 45 I 80 C = 40A 35 40 t r i - Nanoseconds t r i - Nanoseconds C 25 0 10 15 20 25 100 28 TJ = 125ºC 80 26 TJ = 25ºC 60 24 40 22 20 20 0 15 5 30 18 20 30 t d(on) - Nanoseconds I t d(on) - Nanoseconds 55 32 VCE = 600V 120 160 td(on) - - - - RG = 5Ω , VGE = 15V 65 VCE = 600V 120 34 tri 30 40 50 60 70 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 36 tri 160 34 RG = 5Ω , VGE = 15V VCE = 600V 140 32 I C = 80A 120 30 100 28 80 26 60 24 I C = 40A 40 22 20 25 50 75 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - 100 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N120C3(6N)05-12-11