AP8N4R2MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
BVDSS
RDS(ON)
D
80V
4.2mΩ
▼ Ultra Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
AP8N4R2 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
®
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
4
Drain Current, VGS @ 10V (Silicon Limited)
Drain Current, VGS @ 10V
4
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
.
Parameter
Total Power Dissipation
3
5
Rating
Units
80
V
+20
V
120
A
60
A
26.2
A
21
A
240
A
104
W
5
W
86.4
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
Value
Unit
1.2
℃/W
25
℃/W
1
201710021
AP8N4R2MT
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
80
-
-
V
VGS=10V, ID=19A
-
-
4.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=19A
-
48
-
S
IDSS
Drain-Source Leakage Current
VDS=64V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+300
nA
Qg
Total Gate Charge
ID=19A
-
61
107
nC
Qgs
Gate-Source Charge
VDS=40V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
12
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
26
-
ns
tr
Rise Time
ID=19A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
43
-
ns
tf
Fall Time
VGS=10V
-
52
-
ns
Ciss
Input Capacitance
VGS=0V
-
4250 6800
pF
Coss
Output Capacitance
VDS=40V
-
1700
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
44
-
pF
Rg
Gate Resistance
-
2
4
Ω
Min.
Typ.
IS=19A, VGS=0V
-
-
1.2
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=19A, VGS=0V,
-
58
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec; 60 C/W at steady state.
4.Package limitation current is 60A .
5.Starting Tj=25oC , VDD=40V , L=0.3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP8N4R2MT
160
240
T C =25 o C
10V
9.0V
8.0V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
200
T C = 150 o C
160
120
V G = 6.0V
80
10V
9.0V
8.0V
7.0V
120
V G = 6.0V
80
40
40
0
0
0
4
8
12
16
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
23
I D =19A
V G =10V
I D = 19 A
o
T C =25 C
19
15
.
11
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
1.2
0.8
7
3
0.4
4
5
6
7
8
9
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60
2.0
I D =250uA
50
Normalized VGS(th)
1.6
IS(A)
40
T j =150 o C
T j =25 o C
30
1.2
0.8
20
0.4
10
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP8N4R2MT
12
I D = 19 A
V DS =40V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
8000
6
C iss
4000
4
2000
2
C oss
C rss
0
0
0
20
40
60
80
1
21
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
61
81
101
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100
.
10
100us
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
ID (A)
41
V DS , Drain-to-Source Voltage (V)
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
160
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
100
120
80
Limited by package
80
60
40
T j =150 o C
40
T j =25 o C
20
T j = -55 o C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP8N4R2MT
40
120
o
T j =25 C
PD, Power Dissipation(W)
100
RDS(ON) (mΩ)
30
20
10
V GS =10V
80
60
40
20
0
0
0
20
40
60
80
0
I D , Drain Current (A)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP8N4R2MT
MARKING INFORMATION
Part Number
8N4R2
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6