DSEP 60-03A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5 IFSM EAS 70 60 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 700 A TVJ = 25°C; non-repetitive IAS = 3.5 A; L = 180 µH 1.6 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A -55...+175 175 -55...+150 °C °C °C 230 W Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 Nm g ● ● ● ● Applications ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 650 2.5 mA mA IF = 60 A; 1.25 1.71 V V 0.65 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100°C 30 ns ● ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 4.8 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 60-03A 160 800 25 TVJ = 100°C IF A nC 120 600 TVJ = 100°C A VR = 150V VR = 150V 20 IRM Qr TVJ=150°C IF = 120A IF = 60A IF = 30A TVJ=100°C 80 TVJ= 25°C 400 IF = 120A IF = 60A IF = 30A 15 10 40 200 5 0 0.0 0.5 1.0 1.5 V VF 2.0 Fig. 1 Forward current IF versus VF 1.4 0 100 A/ms 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 1.2 0 200 Fig. 3 Peak reverse current IRM versus -diF/dt TVJ = 100°C IF = 60A 12 VFR 70 0.8 VFR 10 IF = 120A IF = 60A IF = 30A 0.85 µs 0.80 tfr tfr Kf IRM ms 1000 600 A/ 800 -diF/dt V VR = 150V trr 80 1.0 400 14 TVJ = 100°C ns 0 0.75 8 0.70 6 0.65 Qr 60 0.6 0.4 50 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 4 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.60 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.324 0.125 0.201 0.005 0.0003 0.038 0.01 0.001 0.0001 0.00001 DSEP 60-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 2-2