Mitsubishi CM50MX-24A Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
CM50MX-24A
¡IC ..................................................................... 50A
¡VCES ......................................................... 1200V
¡CIB (3-phase Converter +
3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
55
29
56
28
57
27
58
26
59
25
60
24
61
23
2
3
4
5
6
7
8
TERMINAL t = 0.8
φ4.3
1.5
30
1
(3.81)
1.15
0.65
*81.67
*85.48
*89.29
*93.1
*96.91
*66.43
*70.24
*47.38
*51.19
54
(7.4)
1.2
*15.48
*19.28
*30.72
*34.52
φ2.5
φ2.1
12.5
*11.66
*15.48
*23.1
*26.9
*34.52
*38.34
20.5
17
13
7
3.75
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
SECTION A
9 10 11 12 13 14 15 16 17 18 19 20 21 22
*Pin positions
with tolerance
A
*91.2
*95
*75.96
*79.76
*60.72
*64.52
*45.48
*49.28
0.8
*30.24
*34.04
(7.75)
*15
*18.8
0
(3)
3.5
φ 0.5
0.8
LABEL
Tolerance otherwise specified
TH1(29)
P(52~53) P1(54~55)
GuP(49)
GvP(44)
GwP(39)
Division of Dimension
NTC
*58.4
0
4-φ5.5 MOUNTING HOLES
39
50 ±0.5
57.5
62
*4.2
*28.33
*32.14
0
*4.06
*13.09
*16.9
121.7
*118.1
110 ±0.5
99
94.5
to
3
±0.2
TH2(28)
EuP(48)
R(1~2) S(5~6) T(9~10)
U(13~14)
B(24~25)
GB(35)
EvP(43)
GuN(34)
GvN(33)
Tolerance
0.5
EwP(38)
over
3
to
6
±0.3
V(17~18)
over
6
to
30
±0.5
over
30
to
120
±0.8
over 120
to
400
±1.2
W(21~22)
GwN(32)
N(57~58) N1(60~61)
E(31)
* Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection.
CIRCUIT DIAGRAM
Jan. 2009
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS
INVERTER PART
Symbol
VCES
VGES
IC
ICRM
PC
IE (Note.3)
IERM(Note.3)
(Tj = 25°C, unless otherwise specified)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
G-E Short
C-E Short
DC, TC = 97°C
Collector current
Pulse
Maximum collector dissipation TC = 25°C
Emitter current
TC = 25°C
(Free wheeling diode forward current) Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Rating
1200
±20
50
100
355
50
100
Unit
Rating
1200
±20
30
60
260
1200
30
60
Unit
Rating
1600
440
50
Unit
V
Vrms
V
A
W
A
BRAKE PART
Symbol
VCES
VGES
IC
ICRM
PC
VRRM(Note.3)
IF (Note.3)
IFRM(Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
G-E Short
C-E Short
DC, TC = 106°C
Collector current
Pulse
Maximum collector dissipation TC = 25°C
Repetitive peak reverse voltage
TC = 25°C
Forward current
Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
V
A
W
V
A
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I2t
Parameter
Conditions
Repetitive peak reverse voltage
Recommended AC input voltage
(Note. 1)
3-phase full wave rectifying, TC = 141°C
DC output current
The sine half wave 1 cycle peak value, f = 60Hz,
Surge forward current
non-repetitive
Value for one cycle of surge current
Current square time
500
A
1040
A2S
Rating
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
Unit
MODULE
Symbol
Tj
Tstg
Viso
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Weight
Conditions
Terminals to base plate, f = 60Hz, AC for 1 minute
(Note. 8)
On the centerline X, Y
Mounting
M5 screw
(Typical)
°C
Vrms
μm
N·m
g
+:convex
–:concave
–
Y
+
Heat sink side
Note. 8: The base plate flatness measurement points are in the following figure.
X
–
+
Heat sink side
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
(Tj = 25°C, unless otherwise specified)
Parameter
Conditions
ICES
VGE(th)
IGES
VCE = VCES, VGE = 0V
Collector cutoff current
Gate-emitter threshold voltage IC = 5mA, VCE = 10V
Gate leakage current
±VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter saturation
voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note.3)
Qrr (Note.3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
VEC(Note.3) Emitter-collector voltage
Rth(j-c)Q
Rth(j-c)R
RGint
RG
(Note. 6)
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
VCC = 600V, IC = 50A, VGE = 15V
VCC = 600V, IC = 50A
VGE = ±15V, RG = 6.2Ω
Inductive load
(IE = 50A)
(Note. 6)
IE = 50A, VGE = 0V
IE = 50A, VGE = 0V
Thermal resistance
per 1/6 IGBT
(Note. 1)
(Junction to case)
per 1/6 free wheeling diode
Internal gate resistance
TC = 25°C, per switch
External gate resistance
Tj = 25°C
Tj = 125°C
Chip
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
250
—
—
—
—
—
2
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
8.5
0.75
0.17
—
100
50
300
600
200
—
3.4
—
—
0.35
0.63
—
62
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
150
—
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
5.1
0.45
0.1
—
1
3.4
—
—
0.48
0.79
—
100
Min.
—
—
Limits
Typ.
—
1.2
Max.
6
1.6
—
—
0.33
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol
Parameter
Conditions
ICES
VGE(th)
IGES
VCE = VCES, VGE = 0V
Collector cutoff current
Gate-emitter threshold voltage IC = 3mA, VCE = 10V
Gate leakage current
±VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter saturation
voltage
Cies
Coes
Cres
QG
IRRM(Note.3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
VFM(Note.3) Forward voltage drop
Rth(j-c)Q
Rth(j-c)R
RGint
RG
(Note. 6)
IC = 30A, VGE = 15V
IC = 30A, VGE = 15V
VCE = 10V
VGE = 0V
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
VCC = 600V, IC = 30A, VGE = 15V
VR = VRRM
(Note. 6)
IF = 30A
IF = 30A
per IGBT
Thermal resistance
(Note. 1)
per Clamp diode
(Junction to case)
TC = 25°C
Internal gate resistance
External gate resistance
Tj = 25°C
Tj = 125°C
Chip
Unit
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
CONVERTER PART
Symbol
IRRM
VF
Rth(j-c)
Parameter
Conditions
Repetitive peak reverse current VR = VRRM, Tj = 150°C
IF = 50A
Forward voltage drop
Thermal resistance
per
Diode
(Note. 1)
(Junction to case)
Unit
mA
V
K/W
Jan. 2009
3
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR/R
B(25/50)
P25
Parameter
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Zero power resistance
Deviation of resistance
B constant
Power dissipation
(Note. 7)
Min.
4.85
–7.3
—
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Min.
Limits
Typ.
Max.
—
0.015
—
Unit
kΩ
%
K
mW
MODULE
Symbol
Rth(c-f)
Parameter
Conditions
Contact thermal resistance
Thermal grease applied
(Note. 1) per 1 module
(Case to fin)
(Note. 2)
Unit
K/W
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
1
7: B(25/50) = In( R25 )/( 1
)
T50
R50 T25
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Dimensions in mm (tolerance: ±1mm)
Chip Location (Top view)
(121.7)
97.6
101.2
102.8
85.8
91.3
70.4
75.9
63.9
47.9
38.8
0
29.7
(110)
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Tr
Br
55
CR C R C R
RP S P T P
2
3
4
5
6
7
44.9
0
1
35.8
61
26.7
60
42.0
8
30
29
28
27
26
25
24
23
18.6
26.7 (Tr/UP, Tr/VP, Tr/WP)
27.4 (Di/Br)
27.9 (Th)
34.9 (Di/UP, Di/VP, Di/WP)
35.6 (Tr/UN, Tr/VN, Tr/WN)
43.3
9 10 11 12 13 14 15 16 17 18 19 20 21 22
99.4
59
93.5
58
78.1
83.1
86.5
57
Tr
Tr Di Tr
UP
VP B r WP Th
Di Tr Di Tr Di Tr
UP UN VP VN WP WN
Di
Di
Di
WN
UN
VN
72.1
CR C R C R
RN S N T N
56
62.7
(50)
(62)
54
27.4
28.4
LABEL SIDE
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
Jan. 2009
4
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
P1
V
VGE = 15V
P1
U
B
VGE = 0V
IC
GuP
P1
GuP
EuP
EuP
U
VGE = 0V
VGE = 15V
GuN
IC
GuN
E
VGE = 15V
V
N1
E
V
IC
GB
N1
E
N1
P side Inverter part Tr
(example of U arm)
VG*E* = 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
N side Inverter part Tr
(example of U arm)
VG*E* = 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
B r Tr
VG*E* = 0V
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-E, GvN-E, GwN-E)
VCE(sat) test circuit
P1
V
P1
VGE = 0V
VGE = 0V
IE
GuP
P1
V
GuP
EuP
IF
EuP
B
U
U
VGE = 0V
VGE = 0V
GuN
GuN
E
E
IE
VGE = 0V
V
GB
E
N1
N1
N1
P side Inverter part Di
(example of U arm)
VG*E* = 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
N side Inverter part Di
(example of U arm)
VG*E* = 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
B r Di
VG*E* = 0V
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-E, GvN-E, GwN-E)
VEC/VFM test circuit
Arm
VGE
IE
IE
90%
0V
0%
trr
Load
–VGE
+
VCC
IC
0A
90%
+VGE
0V
RG
VGE
–VGE
t
VCE
Irr
IC
10%
0A
td(on)
tr
td(off)
Switching time test circuit and waveforms
1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
tf
trr, Qrr test waveform
Jan. 2009
5
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
VGE =
90 20V
13
80
70
12
60
50
40
11
30
20
10
10
9
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
Tj = 25°C
15
0
1
2
3
4
5
6
7
8
9 10
VGE = 15V
3.5
3
2.5
2
1.5
1
Tj = 25°C
Tj = 125°C
0.5
0
0
20
40
60
80
100
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
10
103
Tj = 25°C
7
5
8
6
4
IC = 100A
IC = 50A
2
IC = 20A
0
6
8
10
12
14
16
18
3
2
102
7
5
3
2
101
7
5
3
2
100
20
101
SWITCHING TIME (ns)
Cies
Coes
7
5
3
2
7
5
3
2
1
1.5
2
2.5
3
3.5
4
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
7
5
3
2
10–1
0.5
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
103
100
0
EMITTER-COLLECTOR VOLTAGE VEC (V)
102
7
5
3
2
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE VGE (V)
7
5
3
2
CAPACITANCE (nF)
4
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
COLLECTOR CURRENT IC (A)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
Cres
VGE = 0V
10–2 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
tf
td(off)
102
7
5
3
2
td(on)
tr
Conditions:
101 VCC = 600V
7
5 VGE = ±15V
3 RG = 6.2Ω
2 Tj = 125°C
Inductive load
100 0
10
2 3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Jan. 2009
6
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
101
7
5
3
2
7
SWITCHING LOSS (mJ/pulse)
SWITCHING TIME (ns)
103
tf
td(off)
102
7
5
3
2
td(on)
tr
Conditions:
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 125°C
Inductive load
101
7
5
3
2
100 0
10
2
3
5 7 101
2
3
3
2
7
5
3
2
2
3
5 7 101
5 7 102
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
103
7
5
3
2
lrr (A), trr (ns)
Eon
7
Eoff
5
trr
102
7
5
3
2
Irr
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 25°C
Inductive load
101
7
5
3
2
3
2
Err
2
3
5 7 101
2
3
100 0
10
5 7 102
GATE RESISTANCE RG (Ω)
3
5 7 101
2
3
5 7 102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j–c)
IC = 50A
VCC = 400V
15
VCC = 600V
10
5
50
2
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
0
3
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
101
20
2
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Conditions:
VCC = 600V
5 VGE = ±15V
3 IC, IE = 50A
Tj = 125°C
2
Inductive load
100 0
10
GATE-EMITTER VOLTAGE VGE (V)
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive load
GATE RESISTANCE RG (Ω)
7
0
Eoff
Err
Eon
100
10–1 0
10
5 7 102
102
SWITCHING LOSS (mJ/pulse)
5
100 150 200 250 300 350
GATE CHARGE QG (nC)
7 Single pulse,
5 TC = 25°C
3
2
10–1
7
5
3
2
10–2
Inverter IGBT part : Per unit base = Rth(j–c) = 0.35K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.63K/W
Converter-Di part : Per unit base = Rth(j–c) = 0.33K/W
Brake IGBT part : Per unit base = Rth(j–c) = 0.48K/W
Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.79K/W
–3
10
10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101
7
5
3
2
TIME (s)
Jan. 2009
7
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
RECTIFIER DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Converter part
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
FORWARD CURRENT lF (A)
102
7
5
3
2
101
7
5
3
2
100
Tj = 25°C
Tj = 125°C
0
0.5
1.0
1.5
4
VGE = 15V
3.5
3
2.5
2
1.5
1
0
2.0
Tj = 25°C
Tj = 125°C
0.5
0
10
20
30
40
50
60
COLLECTOR CURRENT IC (A)
FORWARD VOLTAGE VF (V)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
FORWARD CURRENT IF (A)
102
7
5
3
2
101
7
5
3
2
100
Tj = 25°C
Tj = 125°C
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FORWARD VOLTAGE VF (V)
Jan. 2009
8
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