Qimonda HYS72T512341HHP 240-pin registered ddr2 sdram module Datasheet

December 2006
HYS72T512341HHP–[3.7/5]–B
HYS72T512341HJP–[3.7/5]–B
HYS72T512341HKP–[3.7/5]–B
240-Pin Registered DDR2 SDRAM Modules
DDR2 SDRAM
RoHs Compliant Products
Internet Data Sheet
Rev. 1.0
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
HYS72T512341HHP–[3.7/5]–B, HYS72T512341HJP–[3.7/5]–B, HYS72T512341HKP–[3.7/5]–B
Revision History: 2006-12, Rev. 1.0
Page
Subjects (major changes since last revision)
All
Qimonda update
All
Adapted internet edition
All
Added HYS672T512341HJP-[3.7/5]-B and HYS72T512341HKP-[3.7/5]-B modules
Chapter 4
SPD codes updated
Previous Revision: 2006-07, Rev. 0.5
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qag_techdoc_rev400 / 3.2 QAG / 2006-08-07
11032006-VX0M-M6IH
2
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
1
Overview
This chapter gives an overview of the 1.8 V 240-Pin Registered DDR2 SDRAM Modules product family and describes its main
characteristics.
1.1
Features
• 240-pin PC2–4200 and PC2–3200 DDR2 SDRAM
memory modules.
• Four rank 512M ×72 module organization, and 512M ×4
chip organization
• Registered DIMM Parity bit for address and control bus
• 4 GB module built with 512 Mbit DDR2 SDRAMs in SGA4FBGA-60 and PG-A4FBGA-60 chipsize packages.
• Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
• Programmable CAS Latencies (3, 4, 5),
Burst Length (4 & 8) and Burst Type
• Auto Refresh (CBR) and Self Refresh
•
•
•
•
•
•
•
•
•
Programmable self refresh rate via EMRS2 setting
Programmable partial array refresh via EMRS2 settings
DCC enabling via EMRS2 setting
All inputs and outputs SSTL_18 compatible
Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT)
Serial Presence Detect with E2PROM
RDIMM Dimensions (nominal): 18,30 mm high, 133.35
mm wide
All speed grades faster than DDR2–400 comply with
DDR2–400 timing specifications.
RoHS compliant products1)
TABLE 1
Performance Table
Product Type Speed Code
–3.7
–5
Unit
Speed Grade
PC2–4200 4–4–4
PC2–3200 3–3–3
—
266
200
MHz
266
200
MHz
200
200
MHz
15
15
ns
15
15
ns
45
40
ns
60
55
ns
Max. Clock Frequency
@CL5
@CL4
@CL3
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
3
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
1.2
Description
The Qimonda HYS72T512341H[H/J/K]P–[3.7/5]–B module
family are Very Low Profile Registered DIMM (with parity)
modules with 18,3 mm height based on DDR2 technology.
DIMMs are available as ECC modules in 512M ×72 (4 GB)
organization and density, intended for mounting into 240-Ball
connector sockets.
The memory array is designed with 512-Mbit Double-DataRate-Two (DDR2) Synchronous DRAMs. All control and
address signals are re-driven on the DIMM using register
devices and a PLL for the clock distribution. This reduces
capacitive loading to the system bus, but adds one cycle to
the SDRAM timing. Decoupling capacitors are mounted on
the PCB board. The DIMMs feature serial presence detect
based on a serial E2PROM device using the 2-ball I2C
protocol. The first 128 bytes are programmed with
configuration data and the second 128 bytes are available to
the customer.
TABLE 2
Ordering Information for RoHS Compliant Products
Product Type
1)
2)
Compliance Code
Description
SDRAM Technology
PC2–4200
HYS72T512341HHP–3.7–B
4 GB 4R×4 PC2–4200P–444–12–ZZ
4 Rank ECC
4 GB (×4)
HYS72T512341HJP–3.7–B
4 GB 4R×4 PC2–4200P–444–12–ZZ
4 Rank ECC
4 GB (×4)
HYS72T512341HKP–3.7–B
4 GB 4R×4 PC2–4200P–444–12–ZZ
4 Rank ECC
4 GB (×4)
HYS72T512341HHP–5–B
4 GB 4R×4 PC2–3200P–333–12–ZZ
4 Rank ECC
4 GB (×4)
HYS72T512341HJP–5–B
4 GB 4R×4 PC2–3200P–333–12–ZZ
4 Rank ECC
4 GB (×4)
HYS72T512341HKP–5–B
4 GB 4R×4 PC2–3200P–333–12–ZZ
4 Rank ECC
4 GB (×4)
PC2–3200
1) All Product Type numbers end with a place code, designating the silicon die revision. Example: HYS72T512341HJP-3.7-B, indicating Rev.
“B” dies are used for DDR2 SDRAM components. For all Qimonda DDR2 module and component nomenclature see Chapter 6 of this data
sheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200P–444–12”, where 4200P
means Registered DIMM modules (Parity bit) with 4.26 GB/sec Module Bandwidth and “444-12” means Column Address Strobe (CAS)
latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2.
TABLE 3
Address Format
DIMM Density Module Organization
4 GB
512M ×72
Memory Ranks
ECC/
Non-ECC
# of SDRAMs
# of row/bank/column bits
4
ECC
18 ×4
14/2/11
TABLE 4
Components on Modules
Product Type
DRAM Components
DRAM Density
DRAM Organisation
Note
HYS72T512341HHP
HYB18T2G401BHF
512 Mbit
512M ×4
1)
HYS72T512341HJP
HYS72T512341HKP
1) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
2
Pin Configuration
2.1
Pin Configuration
The pin configuration of the Registered DDR2 SDRAM DIMM
is listed by function in Table 5 (240 pins). The abbreviations
used in columns Pin and Buffer Type are explained in Table 6
and Table 7 respectively. The pin numbering is depicted in
Figure 1.
TABLE 5
Pin Configuration of RDIMM
Pin No.
Name
Pin
Type
Buffer
Type
Function
185
CK0
I
SSTL
Clock Signal CK0, Complementary Clock Signal CK0
186
CK0
I
SSTL
52
CKE0
I
SSTL
171
CKE1
I
SSTL
NC
NC
—
Not Connected
Note: 1-Rank module
193
S0
I
SSTL
Chip Select Rank 3:0
76
S1
I
SSTL
220
S2
I
SSTL
221
S3
I
SSTL
Clock Signals
Clock Enables 1:0
Note: 2-Ranks module
Control Signals
192
RAS
I
SSTL
74
CAS
I
SSTL
73
WE
I
SSTL
18
RESET
I
CMOS
Register Reset
71
BA0
I
SSTL
Bank Address Bus 1:0
190
BA1
I
SSTL
54
BA2
I
SSTL
Bank Address Bus 2
Greater than 512Mb DDR2 SDRAMS
NC
I
SSTL
Not Connected
Less than 1Gb DDR2 SDRAMS
Row Address Strobe (RAS), Column Address Strobe (CAS), Write
Enable (WE)
Address Signals
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
5
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Pin No.
Name
Pin
Type
Buffer
Type
Function
188
A0
I
SSTL
Address Bus 12:0, Address Signal 10/AutoPrecharge
183
A1
I
SSTL
63
A2
I
SSTL
182
A3
I
SSTL
61
A4
I
SSTL
60
A5
I
SSTL
180
A6
I
SSTL
58
A7
I
SSTL
179
A8
I
SSTL
177
A9
I
SSTL
70
A10
I
SSTL
AP
I
SSTL
57
A11
I
SSTL
176
A12
I
SSTL
196
A13
I
SSTL
Address Signal 13
NC
NC
—
Not Connected
Note: Non CA parity modules based on 256 Mbit component
174
A14
I
SSTL
Not Connected
173
A15
I
SSTL
Not Connected
3
DQ0
I/O
SSTL
4
DQ1
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
9
DQ2
I/O
SSTL
10
DQ3
I/O
SSTL
122
DQ4
I/O
SSTL
123
DQ5
I/O
SSTL
128
DQ6
I/O
SSTL
129
DQ7
I/O
SSTL
12
DQ8
I/O
SSTL
13
DQ9
I/O
SSTL
Data Signals
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Pin No.
Name
Pin
Type
Buffer
Type
Function
21
DQ10
I/O
SSTL
22
DQ11
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
131
DQ12
I/O
SSTL
132
DQ13
I/O
SSTL
140
DQ14
I/O
SSTL
141
DQ15
I/O
SSTL
24
DQ16
I/O
SSTL
25
DQ17
I/O
SSTL
30
DQ18
I/O
SSTL
31
DQ19
I/O
SSTL
143
DQ20
I/O
SSTL
144
DQ21
I/O
SSTL
149
DQ22
I/O
SSTL
150
DQ23
I/O
SSTL
33
DQ24
I/O
SSTL
34
DQ25
I/O
SSTL
39
DQ26
I/O
SSTL
40
DQ27
I/O
SSTL
152
DQ28
I/O
SSTL
153
DQ29
I/O
SSTL
158
DQ30
I/O
SSTL
159
DQ31
I/O
SSTL
80
DQ32
I/O
SSTL
81
DQ33
I/O
SSTL
86
DQ34
I/O
SSTL
87
DQ35
I/O
SSTL
199
DQ36
I/O
SSTL
200
DQ37
I/O
SSTL
205
DQ38
I/O
SSTL
206
DQ39
I/O
SSTL
89
DQ40
I/O
SSTL
90
DQ41
I/O
SSTL
95
DQ42
I/O
SSTL
96
DQ43
I/O
SSTL
208
DQ44
I/O
SSTL
209
DQ45
I/O
SSTL
214
DQ46
I/O
SSTL
215
DQ47
I/O
SSTL
98
DQ48
I/O
SSTL
99
DQ49
I/O
SSTL
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
Data Bus 63:0
7
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Pin No.
Name
Pin
Type
Buffer
Type
Function
107
DQ50
I/O
SSTL
Data Bus 63:0
108
DQ51
I/O
SSTL
217
DQ52
I/O
SSTL
218
DQ53
I/O
SSTL
226
DQ54
I/O
SSTL
227
DQ55
I/O
SSTL
110
DQ56
I/O
SSTL
111
DQ57
I/O
SSTL
116
DQ58
I/O
SSTL
117
DQ59
I/O
SSTL
229
DQ60
I/O
SSTL
230
DQ61
I/O
SSTL
235
DQ62
I/O
SSTL
236
DQ63
I/O
SSTL
42
CB0
I/O
SSTL
43
CB1
I/O
SSTL
48
CB2
I/O
SSTL
49
CB3
I/O
SSTL
161
CB4
I/O
SSTL
162
CB5
I/O
SSTL
167
CB6
I/O
SSTL
168
CB7
I/O
SSTL
7
DQS0
I/O
SSTL
6
DQS0
I/O
SSTL
16
DQS1
I/O
SSTL
15
DQS1
I/O
SSTL
28
DQS2
I/O
SSTL
27
DQS2
I/O
SSTL
37
DQS3
I/O
SSTL
36
DQS3
I/O
SSTL
84
DQS4
I/O
SSTL
83
DQS4
I/O
SSTL
93
DQS5
I/O
SSTL
92
DQS5
I/O
SSTL
105
DQS6
I/O
SSTL
104
DQS6
I/O
SSTL
114
DQS7
I/O
SSTL
113
DQS7
I/O
SSTL
Check Bits
Check Bits 7:0
Check Bit Input / Output pins
Data Strobe Bus
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
Data Strobes 17:0
8
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Pin No.
Name
Pin
Type
Buffer
Type
Function
46
DQS8
I/O
SSTL
Data Strobes 17:0
45
DQS8
I/O
SSTL
125
DQS9
I/O
SSTL
126
DQS9
I/O
SSTL
134
DQS10
I/O
SSTL
135
DQS10
I/O
SSTL
146
DQS11
I/O
SSTL
147
DQS11
I/O
SSTL
155
DQS12
I/O
SSTL
156
DQS12
I/O
SSTL
202
DQS13
I/O
SSTL
203
DQS13
I/O
SSTL
211
DQS14
I/O
SSTL
212
DQS14
I/O
SSTL
223
DQS15
I/O
SSTL
224
DQS15
I/O
SSTL
232
DQS16
I/O
SSTL
233
DQS16
I/O
SSTL
164
DQS17
I/O
SSTL
165
DQS17
I/O
SSTL
125
DM0
I
SSTL
134
DM1
I
SSTL
146
DM2
I
SSTL
155
DM3
I
SSTL
202
DM4
I
SSTL
211
DM5
I
SSTL
223
DM6
I
SSTL
232
DM7
I
SSTL
164
DM8
I
SSTL
120
SCL
I
CMOS
Serial Bus Clock
119
SDA
I/O
OD
Serial Bus Data
239
SA0
I
CMOS
Serial Address Select Bus 2:0
240
SA1
I
CMOS
101
SA2
I
CMOS
ERR_OUT
O
CMOS
PAR_IN
I
CMOS
Data Mask
Data Masks 8:0
Note: ×8 based module
EEPROM
Parity
55
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
Parity bits
9
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Pin No.
Name
Pin
Type
Buffer
Type
Function
VREF
VDDSPD
VDDQ
AI
—
I/O Reference Voltage
PWR
—
EEPROM Power Supply
PWR
—
I/O Driver Power Supply
VDD
PWR
—
Power Supply
2, 5, 8, 11, 14, 17, VSS
20, 23, 26, 29, 32,
35, 38, 41, 44, 47,
50, 65, 66, 79, 82,
85, 88, 91, 94, 97,
100, 103, 106, 109,
112, 115, 118, 121,
124, 127, 130, 133,
136, 139, 142, 145,
148, 151, 154, 157,
160, 163, 166, 169,
198, 201, 204, 207,
210, 213, 216, 219,
222, 225, 228, 231,
234, 237
GND
—
Ground Plane
Power Supplies
1
238
51, 56, 62, 72, 75,
78, 170, 175,, 181,
191, 194
53, 59, 64, 67, 69,
172, 178, 184,,
187, 189, 197
Other Pins
19, 55, 68, 102,
137, 138, 173
NC
NC
—
Not connected
195
ODT0
I
SSTL
77
ODT1
I
SSTL
On-Die Termination Control 1:0
Note: 2-Ranks module
NC
NC
—
Note: 1-Rank modules
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
TABLE 6
Abbreviations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminated Logic (SSTL_18)
CMOS
CMOS Levels
OD
Open Drain. The corresponding pin has 2 operational states, active low and tristate,
and allows multiple devices to share as a wire-OR.
TABLE 7
Abbreviations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NU
Not Usable
NC
Not Connected
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
FIGURE 1
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0337B)6
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
3
Electrical Characteristics
3.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.
TABLE 8
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Rating
Unit
Note
Min.
Max.
Voltage on VDD pin relative to VSS
–1.0
+2.3
V
1)
Voltage on VDDQ pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on VDDL pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on any pin relative to VSS
–0.5
+2.3
V
1)
°C
1)2)
Storage Temperature
–55
+100
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
DRAM Component Operating Temperature Range
Symbol
TOPER
Parameter
Rating
Operating Temperature
Min.
Max.
0
90
Unit
Note
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 90 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs
4) When operating this product in the 80 °C to 90 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
3.2
D.C. Characteristics
TABLE 10
Operating Conditions
Parameter
Symbol
Values
Unit
Min.
Max.
0
+65
°C
0
+90
°C
Storage Temperature
TOPR
TCASE
TSTG
– 50
+100
°C
Barometric Pressure (operating & storage)
PBar
+69
+105
kPa
Operating Humidity (relative)
HOPR
10
90
%
Operating temperature (ambient)
DRAM Case Temperature
Note
1)2)3)4)
5)
1)
2)
3)
4)
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
Above 80 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs
When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.
5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
Symbol
VDD
VDDQ
VREF
VDDSPD
VIH(DC)
VIL (DC)
IL
Values
Unit
Min.
Typ.
Max.
1.7
1.8
1.9
V
1.7
1.8
1.9
V
1)
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
2)
1.7
—
3.6
V
VREF + 0.125
—
V
– 0.30
—
VDDQ + 0.3
VREF – 0.125
V
In / Output Leakage Current
–5
—
5
µA
1) Under all conditions, VDDQ must be less than or equal to VDD
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ.
3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
Note
14
3)
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
3.3
AC Characteristics
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(tCK = 5ns with tRAS = 40ns).
TABLE 12
Speed Grade Definition Speed Bins for DDR2–533C and DDR2–400B
Speed Grade
DDR2–533C
DDR2–400B
QAG Sort Name
–3.7
–5
CAS-RCD-RP latencies
4–4–4
3–3–3
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3.75
8
5
8
ns
1)2)3)4)
3.75
8
5
8
ns
1)2)3)4)
45
70000
40
70000
ns
1)2)3)4)5)
60
—
55
—
ns
1)2)3)4)
15
—
15
—
ns
1)2)3)4)
15
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) only.
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS/DQS, RDQS/RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
3.4
IDD Specifications and Conditions
List of tables defining IDD Specifications and Conditions.
• Table 13 “IDD Measurement Conditions” on Page 16
• Table 14 “Definitions for IDD” on Page 17
• Table 15 “IDD Specification for HYS72T512341H[HJ/K]P–[3.7/5]–B” on Page 18
TABLE 13
IDD Measurement Conditions
Parameter
Symbol Note
1)2)3)4)5)
Operating Current 0
IDD0
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between
valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
Operating Current 1
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN,
tRCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and
control inputs are SWITCHING, Databus inputs are SWITCHING.
IDD1
6)
Precharge Standby Current
IDD2N
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING,
Databus inputs are SWITCHING.
Precharge Power-Down Current
Other control and address inputs are STABLE, Data bus inputs are FLOATING.
IDD2P
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,
Data bus inputs are FLOATING.
IDD2Q
Active Standby Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD3N
Active Power-Down Current
IDD3P(0)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);
Active Power-Down Current
IDD3P(1)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);
Operating Current - Burst Read
IDD4R
All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX;
tRP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data
bus inputs are SWITCHING; IOUT = 0mA.
Operating Current - Burst Write
All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING;
IDD4W
Burst Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5B
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6)
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Parameter
Symbol Note
1)2)3)4)5)
Distributed Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5D
Self-Refresh Current
IDD6
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.
All Bank Interleave Read Current
IDD7
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.
3) Definitions for IDD see Table 14
4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P
6)
5) For details and notes see the relevant Qimonda component data sheet
6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.
TABLE 14
Definitions for IDD
Parameter
Description
LOW
VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN
STABLE
Inputs are stable at a HIGH or LOW level
FLOATING
Inputs are VREF = VDDQ /2
SWITCHING
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ
signals not including mask or strobes
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
TABLE 15
IDD Specification for HYS72T512341H[HJ/K]P–[3.7/5]–B
Unit
Note1)
2450
mA
2)
2960
2610
mA
2)
3970
3420
mA
3)
1730
1480
mA
3)
3750
3280
mA
3)
4330
3780
mA
3)
3250
2700
mA
3)4)
1880
1620
mA
3)5)
3590
3060
mA
2)
3590
3060
mA
2)
3950
3600
mA
2)
1880
1620
mA
3)6)
360
504
mA
3)6)
Product Type
HYS72T512341H[H/J/K]P–3.7–B
HYS72T512341H[HJ/K]P–5–B
Organization
4 GB
4 GB
4 Ranks
4 Ranks
×72
×72
–3.7
–5
Symbol
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P( MRS = 0)
IDD3P( MRS = 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
2780
4220
3890
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R, and IDD7, are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-12
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2)
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.
List of SPD Code Tables
• Table 16 “SPD Codes for PC2-4200P-444” on Page 19
• Table 17 “SPD Codes for PC2-3200P-333” on Page 24
TABLE 16
Product Type
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
SPD Codes for PC2-4200P-444
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–4200P–444
PC2–4200P–444
PC2–4200P–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0E
0E
0E
4
Number of Column Addresses
0B
0B
0B
5
DIMM Rank and Stacking Information
03
03
03
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
3D
3D
3D
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
50
50
50
11
Error Correction Support (non-ECC, ECC)
06
06
06
12
Refresh Rate and Type
81
81
81
13
Primary SDRAM Width
04
04
04
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
19
Internet Data Sheet
Product Type
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–4200P–444
PC2–4200P–444
PC2–4200P–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
14
Error Checking SDRAM Width
04
04
04
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
20
DIMM Type Information
01
01
01
21
DIMM Attributes
05
05
05
22
Component Attributes
07
07
07
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
3D
3D
3D
50
50
50
50
50
50
60
60
60
3C
3C
3C
1E
1E
1E
3C
3C
3C
2D
2D
2D
31
Module Density per Rank
01
01
01
32
25
25
25
37
37
37
10
10
10
22
22
22
3C
3C
3C
1E
1E
1E
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
39
Analysis Characteristics
00
00
00
33
34
35
36
37
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
20
Internet Data Sheet
Product Type
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–4200P–444
PC2–4200P–444
PC2–4200P–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
40
00
00
00
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
41
3C
3C
3C
69
69
69
80
80
80
1E
1E
1E
28
28
28
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
42
43
44
49
∆T0 (DT0)
43
43
43
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
29
29
29
51
∆T2P (DT2P)
36
36
36
52
∆T3N (DT3N)
21
21
21
53
∆T3P.fast (DT3P fast)
41
41
41
54
∆T3P.slow (DT3P slow)
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
40
40
40
56
∆T5B (DT5B)
1E
1E
1E
57
∆T7 (DT7)
22
22
22
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
61
61
61
61
∆TREG (DTREG) / Toggle Rate
78
78
78
62
SPD Revision
12
12
12
63
Checksum of Bytes 0-62
9F
9F
9F
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
Rev. 1.0, 2006-12
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21
Internet Data Sheet
Product Type
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–4200P–444
PC2–4200P–444
PC2–4200P–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
35
35
35
77
Product Type, Char 5
31
31
31
78
Product Type, Char 6
32
32
32
79
Product Type, Char 7
33
33
33
80
Product Type, Char 8
34
34
34
81
Product Type, Char 9
31
31
31
82
Product Type, Char 10
48
48
48
83
Product Type, Char 11
48
4A
4B
84
Product Type, Char 12
50
50
50
85
Product Type, Char 13
33
33
33
86
Product Type, Char 14
2E
2E
2E
87
Product Type, Char 15
37
37
37
88
Product Type, Char 16
42
42
42
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
2x
0x
0x
Rev. 1.0, 2006-12
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Internet Data Sheet
Product Type
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–4200P–444
PC2–4200P–444
PC2–4200P–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
TABLE 17
Product Type
HYS72T512341HHP–5–B
HYS72T512341HJP–5–B
HYS72T512341HKP–5–B
SPD Codes for PC2-3200P-333
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–3200P–333
PC2–3200P–333
PC2–3200P–333
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0E
0E
0E
4
Number of Column Addresses
0B
0B
0B
5
DIMM Rank and Stacking Information
03
03
03
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
50
50
50
60
60
60
11
Error Correction Support (non-ECC, ECC)
06
06
06
12
Refresh Rate and Type
81
81
81
13
Primary SDRAM Width
04
04
04
10
14
Error Checking SDRAM Width
04
04
04
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
20
DIMM Type Information
01
01
01
21
DIMM Attributes
05
05
05
22
Component Attributes
07
07
07
23
tCK @ CLMAX -1 (Byte 18) [ns]
50
50
50
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Internet Data Sheet
Product Type
HYS72T512341HHP–5–B
HYS72T512341HJP–5–B
HYS72T512341HKP–5–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–3200P–333
PC2–3200P–333
PC2–3200P–333
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
24
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
60
60
60
50
50
50
25
26
27
28
29
30
60
60
60
3C
3C
3C
1E
1E
1E
3C
3C
3C
28
28
28
31
Module Density per Rank
01
01
01
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
35
35
35
47
47
47
15
15
15
27
27
27
3C
3C
3C
28
28
28
1E
1E
1E
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
40
00
00
00
37
37
37
69
69
69
80
80
80
23
23
23
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
2D
2D
2D
46
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
49
∆T0 (DT0)
3B
3B
3B
41
42
43
44
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Internet Data Sheet
Product Type
HYS72T512341HHP–5–B
HYS72T512341HJP–5–B
HYS72T512341HKP–5–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–3200P–333
PC2–3200P–333
PC2–3200P–333
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
25
25
25
51
∆T2P (DT2P)
36
36
36
52
∆T3N (DT3N)
1E
1E
1E
53
∆T3P.fast (DT3P fast)
38
38
38
54
∆T3P.slow (DT3P slow)
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
38
38
38
56
∆T5B (DT5B)
1D
1D
1D
57
∆T7 (DT7)
21
21
21
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
59
59
59
61
∆TREG (DTREG) / Toggle Rate
5C
5C
5C
62
SPD Revision
12
12
12
63
Checksum of Bytes 0-62
D3
D3
D3
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
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Internet Data Sheet
Product Type
HYS72T512341HHP–5–B
HYS72T512341HJP–5–B
HYS72T512341HKP–5–B
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Organization
4 GByte
4 GByte
4 GByte
×72
×72
×72
4 Ranks (×4)
4 Ranks (×4)
4 Ranks (×4)
Label Code
PC2–3200P–333
PC2–3200P–333
PC2–3200P–333
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
76
Product Type, Char 4
35
35
35
77
Product Type, Char 5
31
31
31
78
Product Type, Char 6
32
32
32
79
Product Type, Char 7
33
33
33
80
Product Type, Char 8
34
34
34
81
Product Type, Char 9
31
31
31
82
Product Type, Char 10
48
48
48
83
Product Type, Char 11
48
4A
4B
84
Product Type, Char 12
50
50
50
85
Product Type, Char 13
35
35
35
86
Product Type, Char 14
42
42
42
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
2x
0x
0x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-12
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
5
Package Outlines
In this chapter the Package Outline L-DIM-240-55 is included.
FIGURE 2
Package Outline L-DIM-240-55
$;
0
[
¡
$%&
&
“
%
0,
1
$
“
“
5
“
“
'
H
WD
L
ORI
FR
Q
W
D
F
WV
“
$%&
*
/'
Notes
1.
2.
3.
4.
Drawing according to ISO 8015
Dimensions in mm
General tolerances +/- 0.15
Heat sink is not included in the drawing. Additional width might be required.
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
6
Product Type Nomenclature
Qimonda’s nomenclature uses simple coding combined with
some propriatory coding. Table 18 provides examples for
module and component product type number as well as the
field number. The detailed field description together with
possible values and coding explanation is listed for modules
in Table 19 and for components in Table 20.
TABLE 18
Nomenclature Fields and Examples
Example for
Field Number
1
2
3
4
5
6
7
8
9
10
11
Micro-DIMM
HYS
64
T
64/128
0
2
0
K
M
–5
–A
DDR2 DRAM
HYB
18
T
512/1G 16
0
A
C
–5
TABLE 19
DDR2 DIMM Nomenclature
Field
Description
Values
Coding
1
Qimonda Module Prefix
HYS
Constant
2
Module Data Width [bit]
64
Non-ECC
72
ECC
3
DRAM Technology
T
DDR2
4
Memory Density per I/O [Mbit];
Module Density1)
32
256 MByte
64
512 MByte
128
1 GByte
256
2 GByte
512
4 GByte
5
Raw Card Generation
0 .. 9
Look up table
6
Number of Module Ranks
0, 2, 4
1, 2, 4
7
Product Variations
0 .. 9
Look up table
8
Package, Lead-Free Status
A .. Z
Look up table
9
Module Type
D
SO-DIMM
M
Micro-DIMM
R
Registered
U
Unbuffered
F
Fully Buffered
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Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Field
Description
Values
Coding
10
Speed Grade
–2.5F
PC2–6400 5–5–5
–2.5
PC2–6400 6–6–6
11
Die Revision
–3
PC2–5300 4–4–4
–3S
PC2–5300 5–5–5
–3.7
PC2–4200 4–4–4
–5
PC2–3200 3–3–3
–A
First
–B
Second
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall
module memory density in MBytes as listed in column “Coding”.
TABLE 20
DDR2 DRAM Nomenclature
Field
Description
Values
Coding
1
Qimonda Component Prefix
HYB
Constant
2
Interface Voltage [V]
18
SSTL_18
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
256
256 Mbit
512
512 Mbit
1G
1 Gbit
2G
2 Gbit
40
×4
80
×8
16
×16
5+6
Number of I/Os
7
Product Variations
0 .. 9
Look up table
8
Die Revision
A
First
B
Second
9
10
Package, Lead-Free Status
Speed Grade
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FBGA, lead-containing
F
FBGA, lead-free
–25F
DDR2-800 5-5-5
–2.5
DDR2-800 6-6-6
–3
DDR2-667 4-4-4
–3S
DDR2-667 5-5-5
–3.7
DDR2-533 4-4-4
–5
DDR2-400 3-3-3
30
Internet Data Sheet
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
Table of Contents
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
2.1
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
3.3
3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D.C. Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
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13
13
14
15
16
Internet Data Sheet
Edition 2006-12
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2006.
All Rights Reserved.
Legal Disclaimer
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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