APT60GT60BR
600V
116A
Thunderbolt IGBT™
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
G
C
C
E
G
E
MAXIMUM RATINGS
Parameter
600
Collector-Emitter Voltage
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
JE
SP CT
EC IVE
IF T
IC EC
AT H
IO NI
N CA
VCES
600
Emitter-Collector Voltage
VGE
Gate-Emitter Voltage
±20
I C1
Continuous Collector Current @ TC = 25°C
116
I C2
Continuous Collector Current @ TC = 105°C
I CM1
Pulsed Collector Current
1
I CM2
Pulsed Collector Current
1
60
@ TC = 25°C
220
@ TC = 105°C
120
EAS
Single Pulse Avalanche Energy
PD
Total Power Dissipation
2
Amps
65
mJ
500
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TL
Volts
15
VEC
TJ,TSTG
UNIT
APT60GT60BR
L
Symbol
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C)
600
RBVCES
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
-15
VGE(TH)
Gate Threshold Voltage
BVCES
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
MAX
UNIT
3
4
5
Volts
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
80
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
2000
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
B
VCE(ON)
(VCE = VGE, I C = 700µA, Tj = 25°C)
TYP
O
I CES
I GES
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6223 Rev -
Characteristic / Test Conditions
Symbol
DYNAMIC CHARACTERISTICS
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
tr
td(off)
Turn-off Delay Time
Fall Time
tf
td(on)
tr
tf
310
VCE = 25V
Turn-off Delay Time
Gate Charge
VGE = 15V
120
VCC = 0.5VCES
I C = I C2
20
Resistive Switching (25°C)
14
VGE = 15V
55
VCC = 0.8VCES
I C = I C2
25
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
75
95
I C = I C2
1.9
Eoff
Turn-off Switching Energy
2.4
Ets
Total Switching Losses
td(off)
Ets
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
25
75
VGE = 15V
I C = I C2
90
Total Switching Losses
TJ = +25°C
3.8
Forward Transconductance
VCE = 20V, I C = I C2
ns
260
R G = 10Ω
O
gfe
mJ
4.3
Fall Time
B
tf
Turn-off Delay Time
ns
300
R G = 10Ω
Rise Time
ns
140
RG = 10Ω
VGE = 15V
Turn-on Delay Time
nC
190
TJ = +150°C
tr
pF
280
Turn-on Switching Energy
td(on)
UNIT
180
f = 1 MHz
Fall Time
Eon
MAX
3200
Turn-on Delay Time
Rise Time
td(off)
Capacitance
VGE = 0V
TYP
JE
SP CT
EC IVE
IF T
IC EC
AT H
IO NI
N CA
td(on)
3
MIN
L
Symbol
APT60GT60BR
mJ
6
S
THERMAL CHARACTERISTICS
Symbol
Characteristic
RΘJC
Junction to Case
RΘJA
Junction to Ambient
Torque
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25Ω, L = 100µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
052-6223 Rev -
APT Reserves the right to change, without notice, the specifications and information contained herein.
MIN
TYP
MAX
0.25
40
10
UNIT
°C/W
lb•in