APT50GF60B2RD
APT50GF60LRD
600V
80A
APT50GF60B2RD
Fast IGBT & FRED
T-Max™
(B2RD)
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
G
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol
C
G
E
C
E
APT50GF60LRD
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50GF60B2RD/LRD
600
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
600
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current
I CM2
Pulsed Collector Current
1
PD
Total Power Dissipation
@ TC = 25°C
@ TC = 90°C
UNIT
Volts
±20
80
50
Amps
160
100
300
M
I CM1
1
A
Gate-Emitter Voltage
IN
VGE
RY
Collector-Emitter Voltage
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
EL
I
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
C
G
VCES
TJ,TSTG
TO-264
(LRD)
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.50mA)
600
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
2.1
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C)
2.2
2.8
Gate Threshold Voltage
4.5
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
UNIT
Volts
0.50
2
TBD
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6253 Rev A
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Test Conditions
Characteristic
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
Turn-on Delay Time
165
250
Gate Charge
VGE = 15V
170
225
25
45
I C = I C2
100
140
Resistive Switching (25°C)
20
VGE = 15V
100
A
VCC = .8VCES
Turn-off Delay Time
Turn-on Delay Time
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
PR
4
Rise Time
VGE = 15V
I C = I C2
4
Ets
Total Switching Losses
gfe
Forward Transconductance
90
135
290
435
170
340
2.2
2.4
ns
mJ
4.6
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
30
90
R G = 10Ω
100
TJ = +25°C
4.3
VCE = 20V, I C = I C2
ns
260
I C = I C2
Fall Time
50
TJ = +150°C
VGE = 15V
Turn-off Delay Time
nC
ns
30
R G = 10Ω
4
Turn-on Delay Time
pF
200
RG = 10Ω
Fall Time
UNIT
160
I C = I C2
Total Switching Losses
tf
f = 1 MHz
Rise Time
Ets
td(off)
710
VCC = 0.5VCES
Turn-off Switching Energy
tr
475
3
Eoff
td(on)
3600
IN
tf
2600
IM
td(off)
MAX
VCE = 25V
EL
tr
TYP
Capacitance
VGE = 0V
Cies
td(on)
MIN
RY
Symbol
APT50GF60B2RD/LRD
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6253 Rev A
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.42
Junction to Case (FRED)
0.66
°C/W
40
Junction to Ambient
Package Weight
UNIT
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT50GF60B2RD/LRD
PRELIMINARY
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Ptot
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
320
80
W
A
IC
240
60
200
50
160
40
120
30
80
20
40
10
0
0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 3
IGBT
10 0
A
K/W
t = 2.9µs
p
IC
ZthJC
10 2
10 µs
10 -1
100 µs
10 1
1 ms
D = 0.50
0.20
10 ms
10 -2
0.10
0.05
10 0
0.02
single pulse
0.01
10 -1
0
10
10
1
10
2
V 10
3
10 -3
-5
10
10
-4
10
-3
10
-2
VCE
10
-1
s 10
0
tp
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
USA
405 S.W. Columbia Street
052-6253 Rev A
DC
APT50GF60B2RD/LRD
PRELIMINARY
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
100
100
A
IC
A
17V
15V
13V
11V
9V
7V
80
70
80
IC
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
1
2
3
V
17V
15V
13V
11V
9V
7V
0
0
5
1
2
3
V
VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10
2.5
IICsc
I C(90°C)
Csc //I
C2
/I C
IICpulse
C1
Cpuls/I
6
1.5
4
1.0
2
0.5
0
0.0
0
052-6253 Rev A
5
VCE
100
200
300
400
500
600
V
800
VCE
0
100
200
300
400
500
600
V
800
VCE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
USA
405 S.W. Columbia Street
APT50GF60B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
600
Volts
100
RY
RMS Forward Current
60
Amps
600
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
IN
A
IFSM
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT50GF60B2RD/LRD
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Characteristic / Test Conditions
MIN
IM
Symbol
TYP
1.75
IF = 120A
Volts
1.5
IF = 60A, TJ = 150°C
PR
EL
Maximum Forward Voltage
UNIT
1.8
IF = 60A
VF
MAX
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
70
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
55
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
90
tfr1
Forward Recovery Time
TJ = 25°C
160
tfr2
IF = 60A, diF /dt = 480A/µs, VR = 350V
TJ = 100°C
160
IRRM1
Reverse Recovery Current
TJ = 25°C
10
17
IRRM2
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
20
30
Qrr1
Recovery Charge
TJ = 25°C
350
Qrr2
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
900
Vfr1
Forward Recovery Voltage
TJ = 25°C
6
Vfr2
IF = 60A, diF /dt = 480A/µs, VR = 350V
TJ = 100°C
6
Rate of Fall of Recovery Current
TJ = 25°C
800
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
500
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6253 Rev A
Symbol
APT50GF60B2RD/LRD
2500
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
160
TJ = 150°C
120
TJ = 100°C
TJ = 25°C
80
TJ = -55°C
40
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
60A
1000
500
30A
30A
20
10
IM
TJ = 100°C
VR = 350V
160
120A
60A
PR
30A
EL
200
120
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
0.7
0.5
Qrr
1.2
trr
trr
IRRM
0.8
Qrr
0.4
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
15.0
1200
1000
TJ = 100°C
VR = 350V
IF = 60A
12.5
800
10.0
Vfr
600
7.5
400
5.0
200
Tfr
2.5
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
D=0.5
0.2
0.1
0.05
0.05
0.01
0.02
Note:
0.01
PDM
0.1
t1
SINGLE PULSE
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
30
1.6
RY
60A
IN
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
120A
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
120A
1500
2.0
TJ = 100°C
VR = 350V
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
50
ZΘJC, THERMAL IMPEDANCE
(°C/W)
2000
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
052-6253 Rev A
TJ = 100°C
VR = 350V
A
IF, FORWARD CURRENT
(AMPERES)
200
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT50GF60B2RD/LRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
052-6253 Rev A
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
Collector
(Cathode)
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
Gate
Collector
(Cathode)
Emitter
(Anode)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Collector
(Cathode)
Emitter
(Anode)