DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features RDS(ON) max Package 11.6m @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V 0.6mm profile – ideal for low profile applications PCB footprint of 4mm2 Low Gate Threshold Voltage 10.5A Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.4A Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ID max TA = +25°C U-DFN2020-6 Type E Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) General Purpose Interfacing Switch Power Management Functions Drain U-DFN2020-6 Type E Pin1 Gate Source Bottom View Pin Out Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN2015UFDE-7 DMN2015UFDE-13 Notes: Marking N4 N4 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YM ADVANCE INFORMATION Product Summary N4 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2015UFDE Datasheet number: DS35560 Rev. 9 - 2 Mar 3 N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D December 2014 © Diodes Incorporated DMN2015UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 2.5V Steady State t<10s ID Value 20 ±12 10.5 8.5 ID 12.5 10.0 A ID 9.4 7.5 A A 11.2 8.8 80 2.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±100 V A nA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) — |Yfs| VSD — — 1.1 11.6 15 30 50 — 1.2 V Static Drain-Source On-Resistance — 9.3 11.4 17 24 11.3 — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.5A VGS = 2.5V, ID = 8.5A VGS = 1.8V, ID = 5A VGS = 1.5V, ID = 3A VDS = 10V, ID = 8.5A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr — — — — — — — — — — — — — — 1779 175 154 0.94 19.7 45.6 2.9 3.8 7.4 16.8 43.6 10.9 8.6 3.7 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: m S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω IF = 8.5A, di/dt = 210A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2015UFDE Datasheet number: DS35560 Rev. 9 - 2 2 of 6 www.diodes.com December 2014 © Diodes Incorporated DMN2015UFDE 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 20 15 10 12 8 TA = 150°C TA = 125°C 4 5 TA = 85°C TA = 25°C 0 1 2 V DS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 0.04 0.03 VGS = 1.5V 0.02 VGS = 1.8V VGS = 2.5V 0.01 VGS = 4.5V 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 TA = -55°C 0 3 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.045 0.040 0.035 0.030 0.025 0.020 0.015 ID = 8.5A 0.010 ID = 4.5A 0.005 20 0.020 0 0 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 VGS = 2.5V ID = 5A VGS = 4.5V 0.015 TA = 150°C TA = 125°C TA = 85°C 0.010 TA = 25°C TA = -55°C 0.005 0 2.0 0.050 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN2015UFDE Datasheet number: DS35560 Rev. 9 - 2 20 3 of 6 www.diodes.com 1.4 VGS = 4.5V ID = 10A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature December 2014 © Diodes Incorporated 1.6 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.020 0.015 VGS = 4.5 V ID = 5A 0.010 VGS = 10V ID = 10A 0.005 1.4 1.2 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 20 16 12 TA = 25°C 8 4 Ciss 1,000 Coss Crss f = 1MHz 0 0 10 0.2 0.4 0.6 0.8 1.0 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 20 100 10 R DS(on) Limited PW = 100µs 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN2015UFDE VDS = 10V ID = 8.5A 6 4 2 0 10 DC 1 PW = 10s PW = 1s 0.1 TJ(max) = 150°C PW = 100ms PW = 10ms PW = 1ms TA = 25°C VGS = 12V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN2015UFDE Datasheet number: DS35560 Rev. 9 - 2 0.01 0.01 4 of 6 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 December 2014 © Diodes Incorporated DMN2015UFDE r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * R JA R JA = 61°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm Suggested Pad Layout Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) DMN2015UFDE Datasheet number: DS35560 Rev. 9 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 5 of 6 www.diodes.com December 2014 © Diodes Incorporated DMN2015UFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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