Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Types OP770A, OP770B, OP770C, OP770D Features Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) • • • • Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260° C(1) Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. Notes: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/° C above 25° C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lense surface of the phototransistor being tested. (4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.040T A-3.4) when TA is ambient temperature in °C. Typi cal Per form ance Curves The device’s wide receiving angle provides relatively even reception over a large area. Typical Spectral Response Schematic The OP770 is 100% production tested using an infrared light source for close correlation with Optek’s GaAs and GaAIAs emitters. Side-looking package is designed for easy PC board mounting of slotted optical switches or optical interrupt detectors. Wavelength - nm Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Types OP770A, OP770B, OP770C, OP770D Elec tri cal Char ac ter is tics(TA = 25 o C un less oth er wise noted) SYMBOL PARAMETER MIN On-State Collector Current ∆IC /∆T ICEO 7.00 2.80 4.20 7.00 Relative IC Changes with Temperature VCE(SAT) Collector-Emitter Saturation Voltage 5.0 0.40 Capacitance VCE = 5.0 V, Ee = 1.0 mW/cm2(3) mA 100 Emitter-Collector Breakdown Voltage TEST CON DI TIONS VCE = 5.0 V, Ee = 1.0 mW/cm2 , λ = 935 nm %/ ° C 100 Collector Dark Current V(BR)ECO CCE 0.85 0.85 1.50 2.25 OP770D OP770C OP770B OP770A IC(ON) TYP MAX UNITS 1000 nA VCE = 10.0 V, Ee = 0 V IE = 100 µA V IC = 100 µA, Ee = 1.0 mW/cm2(3) pF VR = 0 Typi cal Per form ance Curves Normalized Output vs. Frequency Typical Rise and Fall Time vs. Load Resistance 160 1.00 .75 OP770 VR L = 1 V VCE = 5 V 50% Duty Cycle OP550 V CC = 5 V V RL = 1 V 80 f = 100 Hz 60 PW = 1 mS OP770 OP550 40 .25 20 RL = 10 KΩ 0 0.0 10 120 100 .50 1 LED = GaAIAs, λ = 890 140 n m 100 Frequency - KHz 1000 0 2 4 6 8 10 RL - Load Resistance - KΩ Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396