HMC451LP3 / 451LP3E v00.0808 Amplifiers - Linear & Power - SMT 9 Typical Applications Features The HMC451LP3(E) is ideal for: Gain: 18 dB • Microwave Radio & VSAT Saturated Power: +21 dBm @ 18% PAE • Military & Space Output IP3: +28 dBm • Test Equipment & Sensors Single Supply: +5V @ 120 mA • Fiber Optics 50 Ohm Matched Input/Output • LO Driver for HMC Mixers 16 Lead 3x3mm SMT Package: 9mm² Functional Diagram General Description The HMC451LP3(E) is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 18 GHz, the amplifier provides 18 dB of gain, +21 dBm of saturated power and 18% PAE from a single +5V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or LO driver for HMC mixers. The HMC451LP3(E) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V Parameter Min. Frequency Range Gain Typ. Max. Min. 5 - 16 15 Gain Variation Over Temperature 18 0.02 Typ. Max. 16 - 18 12.5 0.03 GHz 16 0.02 Units dB 0.03 dB/ °C Input Return Loss 13 13 dB Output Return Loss 12 8 dB 19 dBm Output Power for 1 dB Compression (P1dB) 16.5 19.5 16 Saturated Output Power (Psat) 21 20 dBm Output Third Order Intercept (IP3) 28 25 dBm Noise Figure 7 7 Supply Current (Idd) 9-1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz 120 150 120 dB 150 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 20 16 S21 S11 S22 5 GAIN (dB) -5 12 -15 4 -25 0 4 6 8 10 12 14 16 18 20 4 6 8 FREQUENCY (GHz) 12 14 16 18 20 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 10 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 -10 -15 +25C +85C -40C -20 -25 -25 4 6 8 10 12 14 16 18 20 4 6 8 FREQUENCY (GHz) 24 24 20 20 Psat (dBm) 28 16 +25C +85C -40C 8 12 14 16 18 20 16 18 20 Psat vs. Temperature 28 12 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 9 +25C +85C -40C 8 16 12 +25C +85C -40C 8 4 Amplifiers - Linear & Power - SMT RESPONSE (dB) 15 4 0 0 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 4 6 8 10 12 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Power Compression @ 17 GHz Power Compression @ 10 GHz 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 -14 -10 -6 -2 2 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 0 -18 6 -14 -10 INPUT POWER (dBm) -2 2 6 Noise Figure vs. Temperature 12 32 30 NOISE FIGURE (dB) 10 28 IP3 (dBm) -6 INPUT POWER (dBm) Output IP3 vs. Temperature 26 24 +25C +85C -40C 22 8 6 +25C +85C -40C 4 20 2 4 6 8 10 12 14 16 18 4 20 6 8 FREQUENCY (GHz) 12 14 16 18 20 Reverse Isolation vs. Temperature 0 21 -10 ISOLATION (dB) 22 20 19 18 17 10 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz 16 4.5 9-3 Pout (dBm), GAIN (dB), PAE (%) 24 0 -18 GAIN (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - SMT 9 Pout (dBm), GAIN (dB), PAE (%) 24 Gain P1dB Psat +25C +85C -40C -20 -30 -40 -50 -60 5 Vdd (V) 5.5 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LP3 / 451LP3E v00.0808 Absolute Maximum Ratings Drain Bias Voltage (Vdd1 = Vdd2) +5.5V RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 12.8 mW/°C above 85 °C) 0.83 W Thermal Resistance (channel to ground paddle) 78 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Typical Supply Current vs. Vdd1 = Vdd2 Vdd1 = Vdd2 (V) Idd1 + Idd2 (mA) +4.5 120 +5.0 122 +5.5 124 Note: Amplifier will operate over full voltage range shown above Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED 9 Amplifiers - Linear & Power - SMT ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC451LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC451LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 451 XXXX 451 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Pin Descriptions Pin Number Amplifiers - Linear & Power - SMT 9 9-5 Function Description 1, 2, 4 - 9, 11, 12, 14, 16 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 13 Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are required. 15 Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are required. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Component Value C1, C2 100 pF C3, C4 1,000 pF C5, C6 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Evaluation PCB List of Materials for Evaluation PCB 120202 Item Description J1 - J2 PCB Mount SMA Connector J3 - J5 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 2.2 µF Capacitor, Tantalum U1 HMC451LP3(E) Amplifier PCB [2] 120201 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-6