HFA15TB60S Pb HFA15TB60S Pb Free Plating Product 15Amperes,600Volts Single Surface Mount Hyper Fast Recovery Epitaxial Diode TO-263/D2PAK(SMD-220) APPLICATION · · · · · · · Freewheeling, Snubber, Clamp 4 K(Bottom Side Metal Heatsink) Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS 2 PRODUCT FEATURE K 3 A 1 N/C · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics · Low Recovery Loss 3 · Low Forward Voltage PIN A=Anode · High Surge Current Capability 2 PIN K=Cathode 4 CASE K=Cathode 1 PIN N/C(None Collect) · Low Leakage Current GENERAL DESCRIPTION HFA15TB60S using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Symbol VRRM Test Conditions Values 600 Continuous forward current IF(AV) Tc =110°C 15 Single pulse forward current IFSM Tc =25°C 120 Maximum repetitive forward current IFRM Square wave, 20kHZ 30 Operating junction Storage temperatures Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Units V A Tj 175 °C Tstg -55 to +175 °C Page 1/3 http://www.thinkisemi.com.tw/ HFA15TB60S Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Breakdown voltage Blocking voltage Symbol VBR, VR Forward voltage (Per Diode) VF Reverse leakage current(Per Diode) IR Reverse recovery time(Per Diode) trr Test Conditions Min Typ. Max. Units IR=100µA 600 IF=15A 1.35 1.60 V IF=15A, Tj =125°C 1.20 1.40 VR= VRRM 20 Tj=150°C, VR=600V 200 IF=0.5A, IR=1A, IRR=0.25A 35 45 IF=1A,VR=30V, di/dt =200A/us 27 35 µA ns Thermal characteristics Paramter Symbol Junction-to-Case RθJC Typ ２．０ Units ℃/W Electrical performance (typic) Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 2/3 http://www.thinkisemi.com.tw/ HFA15TB60S PACKAGE OUTLINE DIMENSIONS 2 TO-263 (D PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Symbol Unit (mm) A 10.8 Unit (inch) 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 Page 3/3 http://www.thinkisemi.com.tw/