HCS60R092E 600V N-Channel Super Junction MOSFET Features Key Parameters Very Low FOM (RDS(on) X Qg) Extremely low switching loss Parameter Value Unit BVDSS @Tj,max 650 V ID 40 A RDS(on), max 92 Pȍ Qg, Typ 45 nC Excellent stability and uniformity 100% Avalanche Tested Application Package & Internal Circuit PC Power TO-220F Server Power Supply Telecom Solar Inverter G D Super Charger for Automobiles Absolute Maximum Ratings Symbol S TC=25 unless otherwise specified Parameter Value Units VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ρ30 V Drain Current – Continuous (TC = 25) 40 * A Drain Current – Continuous (TC = 100) 25 * A IDM Drain Current – Pulsed (Note 1) 120 * A EAS Single Pulsed Avalanche Energy (Note 2) 1000 mJ dv/dt MOSFET dv/dt ruggedness, VDS=0…480V 50 V/ns dv/dt Reverse diode dv/dt, VDS=0…480V, IDSID 15 V/ns PD Power Dissipation 35 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ID * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RșJC Junction-to-Case -- 3.6 RșJA Junction-to-Ambient -- 62.5 Units /W క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ HCS60R092E Super Junction MOSFET July 2016 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 80 92 m VGS = 0 V, ID = 250 Ꮃ 600 -- -- V VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TJ = 125 -- -- 100 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ -- 3200 -- Ꮔ -- 200 -- Ꮔ -- 9 -- Ꮔ -- 80 -- Ꭸ -- 30 -- Ꭸ -- 110 -- Ꭸ -- 20 -- Ꭸ -- 45 60 nC -- 19 -- nC -- 9 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 300 V, ID = 40 A, RG = 25 VDS = 480 V, ID = 40 A VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 40 ISM Pulsed Source-Drain Diode Forward Current -- -- 120 VSD Source-Drain Diode Forward Voltage IS = 40 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 392 -- Ꭸ Qrr Reverse Recovery Charge IS = 20 A, VGS = 0 V diF/dt = 100 A/ȝV -- 6.3 -- ȝ& A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=8A, VDD=50V, RG=25:, Starting TJ =25qC 3. Pulse Test : Pulse Width ȝV'XW\&\FOH క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ HCS60R092E Super Junction MOSFET Electrical Characteristics TJ=25 qC HCS60R092E Super Junction MOSFET Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 105 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 104 Ciss 103 102 Coss 1 10 VGS = 0 V f = 1 MHz 8 6 4 2 VDS = 480V ID = 40A Crss 0 0 10 10 0 20 40 60 80 100 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 50 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ (continued) 3.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250uA 0.8 -100 -50 0 50 100 150 3.0 2.5 2.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 20 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] o TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 40 Operation in This Area is Limited by R DS(on) 102 ID, Drain Current [A] 10 100 Ps 1 ms 0 10 10 ms 100 ms * Notes : 1. TC = 25 oC 10-1 2. TJ = 150 oC 3. Single Pulse 10 10-1 100 20 10 DC -2 101 102 0 25 103 50 75 100 125 150 TJ, Junction Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZTJC(t), Thermal Response ID, Drain Current [A] 30 10 Ps 1 100 0.2 * Notes : 1. ZTJC(t) = 3.6 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.1 0.05 10-1 0.02 PDM 0.01 t1 single pulse -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ HCS60R092E Super Junction MOSFET Typical Characteristics HCS60R092E Super Junction MOSFET Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ HCS60R092E Super Junction MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡ HCS60R092E Super Junction MOSFET Package Dimension {vTYYWmG ±0.20 ±0.20 .2 ±0 0 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 ij 0.80±0.20 0.50±0.20 2.54typ 2.54typ TO-220FM TO-220F క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΦΝΪ͑ͣͧ͑͢͡