ON MMBTA05LT1 Driver transistors(npn silicon) Datasheet

MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1 is a Preferred Device
Driver Transistors
NPN Silicon
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MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Value
Unit
VCEO
MMBTA05LT1
MMBTA06LT1
Collector–Base Voltage
60
80
VCBO
MMBTA05LT1
MMBTA06LT1
Emitter–Base Voltage
Collector Current – Continuous
COLLECTOR
3
Vdc
1
BASE
Vdc
60
80
2
EMITTER
VEBO
4.0
Vdc
IC
500
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
2
RJA
556
°C/W
PD
300
mW
SOT–23
CASE 318
STYLE 6
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
3
1
MARKING DIAGRAMS
1H X
1GM X
MMBTA05LT1
MMBTA06LT1
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
1H, 1GM = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBTA05LT1
SOT–23
3000/Tape & Reel
MMBTA06LT1
SOT–23
3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 2
1
Publication Order Number:
MMBTA05LT1/D
MMBTA05LT1, MMBTA06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
60
80
–
–
V(BR)EBO
4.0
–
Vdc
ICES
–
0.1
Adc
–
–
0.1
0.1
100
100
–
–
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBTA05
MMBTA06
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Adc
ICBO
MMBTA05
MMBTA06
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
–
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
–
0.25
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
–
1.2
Vdc
fT
100
–
MHz
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-ON TIME
VCC
-1.0 V
5.0 s
100
+10 V
0
RL
100
OUTPUT
100
5.0 s
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
RL
OUTPUT
* CS 6.0 pF
5.0 F
100
+40 V
RB
Vin
* CS 6.0 pF
5.0 F
VCC
+VBB
+40 V
RB
Vin
tr = 3.0 ns
TURN-OFF TIME
300
80
40
C, CAPACITANCE (pF)
200
100
70
50
3.0
5.0 7.0 10
20
30
50
70 100
0.2
0.5
1.0
2.0
5.0
10
20
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
50
100
400
TJ = 125°C
VCE = 1.0 V
ts
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5.0 7.0 10
tr
td @ VBE(off) = 0.5 V
20
30
50
70 100
200 300
200
-55°C
100
80
60
40
0.5
500
25°C
1.0
2.0 3.0 5.0
10
20 30
50
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
t, TIME (ns)
4.0
0.1
200
200
10
Cobo
VR, REVERSE VOLTAGE (VOLTS)
300
20
10
8.0
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
30
Cibo
20
6.0
30
2.0
100
70
50
TJ = 25°C
60
VCE = 2.0 V
TJ = 25°C
h FE , DC CURRENT GAIN
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
MMBTA05LT1, MMBTA06LT1
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.5
VCE(sat) @ IC/IB = 10
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
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3
200
500
200 300 500
1.0
-0.8
R VB , TEMPERATURE COEFFICIENT (mV/° C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBTA05LT1, MMBTA06LT1
TJ = 25°C
0.8
0.6
IC =
250 mA
IC =
100 mA
IC =
50 mA
-1.2
IC =
500 mA
-1.6
0.2
0
RVB for VBE
-2.0
0.4
IC =
10 mA
0.05
0.1
-2.4
0.2
0.5
1.0
2.0
5.0
10
20
-2.8
0.5
50
1.0
2.0
5.0
10
20
50
100
200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
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4
500
MMBTA05LT1, MMBTA06LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
The melting temperature of solder is higher than the rated
pad size. This can vary from the minimum pad size for
temperature of the device. When the entire device is heated
soldering to a pad size given for maximum power
to a high temperature, failure to complete soldering within
dissipation. Power dissipation for a surface mount device is
a short time could result in device failure. Therefore, the
determined by TJ(max), the maximum rated junction
following items should always be observed in order to
temperature of the die, RθJA, the thermal resistance from the
minimize the thermal stress to which the devices are
device junction to ambient, and the operating temperature,
subjected.
TA. Using the values provided on the data sheet for the
SOT–23 package, PD can be calculated as follows:
• Always preheat the device.
• The delta temperature between the preheat and soldering
TJ(max) – TA
PD =
should be 100°C or less.*
RθJA
• When preheating and soldering, the temperature of the
The values for the equation are found in the maximum
leads and the case must not exceed the maximum
ratings table on the data sheet. Substituting these values into
temperature ratings as shown on the data sheet. When
the equation for an ambient temperature TA of 25°C, one can
using infrared heating with the reflow soldering method,
calculate the power dissipation of the device which in this
the difference shall be a maximum of 10°C.
case is 225 milliwatts.
• The soldering temperature and time shall not exceed
150°C – 25°C
260°C for more than 10 seconds.
PD =
= 225 milliwatts
556°C/W
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit • After soldering has been completed, the device should be
board to achieve a power dissipation of 225 milliwatts.
allowed to cool naturally for at least three minutes.
There are other alternatives to achieving higher power
Gradual cooling should be used as the use of forced
dissipation from the SOT–23 package. Another alternative
cooling will increase the temperature gradient and result
would be to use a ceramic substrate or an aluminum core
in latent failure due to mechanical stress.
board such as Thermal Clad. Using a board material such • Mechanical stress or shock should not be applied during
as Thermal Clad, an aluminum core board, the power
cooling.
dissipation can be doubled using the same footprint.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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5
MMBTA05LT1, MMBTA06LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW STANDARD
318-08.
A
L
3
1
V
B S
2
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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6
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBTA05LT1, MMBTA06LT1
Notes
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7
MMBTA05LT1, MMBTA06LT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MMBTA05LT1/D
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