CHENMKO ENTERPRISE CO.,LTD CHEMD3PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * * * * SOT-563 Low colloector-emitter saturation. High saturation current capability. Both the CHDTA114E & CHDTC114E in one package. Built in bias resistor(R1=10kΩ, Typ. ) (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 0.15~0.3 (4) (3) MARKING 1.1~1.3 * EX 0.5~0.6 0.09~0.18 CIRCUIT 3 1 R1 R2 1.5~1.7 R2 R1 4 6 SOT-563 Dimensions in millimeters CHDTA114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -40 +10 V − -50 − -100 − 150 mW IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 O TJ Junction temperature − 150 O C C Note Transistor mounted on an FR4 printed-circuit board. 2004-07 CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 50 − 100 − 150 mW IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C Note Transistor mounted on an FR4 printed-circuit board. CHDTA114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT -0.5 − − V − − -3.0 V -0.3 V − -0.88 mA − − -0.5 uA 30 − − Input resistor 7.0 10.0 13.0 KΩ Resistor ratio Transition frequency 0.8 − 1.0 250 1.2 − MHz VIoff) Input off voltage IO=-100uA; VCC=-5.0V VI(on) Input on voltage IO=-10mA; VO=-0.3V VO(on) Output voltage IO=-10mA; II=-0.5mA − II Input current VI=-5V − IC(off) Output current VI=0V; VCC=-50V hFE DC current gain IO=-5mA; VO=-5.0V R1 R2/R1 fT IE=5mA, VCE=-10.0V f=100MHz = 0.1 Note Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V − − 0.5 V VI(on) Input on voltage IO=10mA; VO=0.3V 3.0 − − V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V II Input current VI=5V − − 0.88 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 30 − − R1 Input resistor 7.0 10.0 13.0 KΩ R2/R1 fT Resistor ratio Transition frequency 0.8 − 1.0 250 1.2 − MHz Note Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz = RATING CHARACTERISTIC CURVES ( CHEMD3PT ) CHDTA114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) -100 Fig.2 Output current vs. input voltage (OFF characteristics) -10m -5m VO=- 0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) -50 -20 -10 -5 -2 Ta =- 40OC O 25 = C 100OC -1 -500m -200m -100m -100 -200 -500 -1m -2m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 -0 -5m -10m -20m -50m -100m VCC =- 5V Ta=100OC 25OC -40 OC -0.5 Fig.3 DC current gain vs. output current 1k 200 100 50 20 10 5 2 1 -100 -200 -1 -2.5 -3.0 lO/lI=20 -500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI Ta=100 C 25OC -40OC -2.0 Fig.4 Output voltage vs. output current VO =- 5V O -1.5 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 500 -1.0 -200m O Ta=100 C 25OC -40 OC -100m -50m -20m -10m -5m -2m -500 -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) -1m -100 -200 -500 -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) RATING CHARACTERISTIC CURVES ( CHEMD3PT ) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta =- 40OC O 25 = C 100OC 5 2 1 500m 200m 100m 100 200 500 1m 2m 2m 1m 500 VCC=5V Ta=100OC 25OC -40 OC 200 100 50 20 10 5 2 1 5m 10m 20m 50m 100m 0 0.5 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1k 2.5 3.0 lO/lI=20 500m Ta=100 C 25OC -40OC 100 50 20 10 5 2 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 2.0 1 VO =5V O 1 100 200 1.5 Fig.4 Output voltage vs. output current 500 200 1.0 INPUT VOLTAGE : VI(off) (V) Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A)