ETC2 GBJ25M Glass passivated single phase bridge rectifier Datasheet

GBJ25D thru GBJ25M
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 25.Amp
Features
y
y
y
y
y
Circuit
Glass passivated die construction
Ideal for printed circuit boards
Plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High temperature soldering guaranteed:
265℃ /10 seconds, 0.375” (9.5mm) lead
length, 5lbs. (2.3kg) tension
Mechanical Data
Case: Molded plastic case
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
-
+
Module Type
TYPE
GBJ25D
GBJ25G
GBJ25J
GBJ25K
GBJ25M
Polarity: Marked on Body
Mounting Position: Any
VRRM
VRSM
200V
400V
600V
800V
1000V
300V
500V
700V
900V
1100V
Maximum Ratings and Thermal Characteristics (TA = 25℃ unless otherwise noted)
Symbol
Conditions
Values
25
Maximum average forward output rectified current Tc =100℃
IF(AV)
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
i2t
Rating for fusing (t<8.3ms)
a.c.50HZ;r.m.s.;1min
Visol
Maximum thermal resistance per leg
TOR
Tj, TSTG
Weight
Mounting Torque (Recommended torque:0.5 N.m)
Operating Junction and storage temperature range
Approximate Weight
Electrical Characteristics (TA = 25℃ unless otherwise noted)
Symbol
Conditions
IR
Notes:
A
350
A
500
A2s
2500
V
(1)
RθJA
RθJC
VF
Units
Maximum Instantaneous Forward Voltage per leg
Maximum DC reverse current at rated
DC blocking voltage per leg
IFM =12.5A
TA = 25℃
TA = 125℃
22
1.0 (2)
℃/W
0.8
-55 to +150
7.0
N.m
℃
g
Values
Units
1.0
V
5.0
500
µA
(1) Junction to ambient without heatsink
(2) Junction to case with heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with #6 screw
Document Number: GBJ25D thru GBJ25M
Jan.12, 2011
www.smsemi.com
1
GBJ25D thru GBJ25M
Performance Curves
100
30
20
10
0
Resistive or
Inductive load
0
50
100
TA, TEMPERATURE (ºC)
Fig.1 Forward Current Derating Curve
500
400
Tj=25ºC
200
100
1
1.0
Tj=25ºC
Pulse Width=300μs
0.5
0.7
0.9
1.1
1.3
1.5
VF, INSTANTANEOUSFWDVOLTAGE (V)
Fig.2 Typical Forward Characteristics, per element
400
300
0
10
0.1
150
Single half-sine-wave
(JEDEC method)
100
Tj=25ºC
f =1MHZ
10
10
100
NUMBER OF CYCLES AT 60Hz
Fig.3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
IF, INSTANTANEOUSFWDCURRENT (A)
40
Cj, JUNCTION CAPACITANCE (pF)
IO, AVERAGE RECTIFIED CURRENT (A)
50
1
10
VR, REVERSE VOLTAGE (V)
Fig.4 Typical Junction Capacitance
100
1000
100
Tj=100ºC
10
1.0
0.1
0.01
Tj=25ºC
0
20
40
60
80
100
120
140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
Document Number: GBJ25D thru GBJ25M
Jan.12, 2011
www.smsemi.com
2
GBJ25D thru GBJ25M
Package Outline Information
CASE: GBJ
1.193(30.3)
1.075(27.3)
0.150(3.8)
0.134(3.4)
0.134(3.4)
0.118(3.0)
0.799(20.3)
0.681(17.3)
0.165(4.2)
0.150(3.8)
+
~
~
0.197
(5.0)
-
0.106(2.7)
0.091(2.3)
0.094(2.4)
0.079(2.0)
0.043(1.1)
0.035(0.9)
0.697(17.7)
0.677(17.2)
0.441(11.2)
0.425(10.8)
0.189(4.8)
0.173(4.4)
0.114(2.9)
0.098(2.5)
0.031(0.8)
0.024(0.6)
0.409(10.4) 0.303(7.7)
(2×)
0.394(10.0) 0.287(7.3)
Dimensions in inches (mm)
Document Number: GBJ25D thru GBJ25M
Jan.12, 2011
www.smsemi.com
3
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