Preliminary Datasheet BCR8CM-12LB R07DS1028EJ0400 (Previous: REJ03G0454-0300) Rev.4.00 Feb 25, 2013 600V - 8A - Triac Medium Power Use Features Non-Insulated Type Planar Passivation Type IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 1 2 12 3 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class Symbol Unit 12 600 720 VDRM VDSM V V Symbol Ratings Unit RMS on-state current IT (RMS) 8 A Commercial frequency, sine full wave Note3 360° conduction, Tc = 130C Surge on-state current ITSM 80 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +150 – 40 to +150 2.1 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 8 BCR8CM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2/0.1 — — V Rth (j-c) — — 2.0 C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 — — V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 1. 2. 3. 4. 5. 6. Gate open. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 8 BCR8CM-12LB Preliminary Performance Curves Maximum On-State Characteristics 3 2 Surge On-State Current (A) 100 Tj = 150°C 101 7 5 3 2 100 7 5 0.5 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 VGT = 1.5V 2 PGM = 5W IGM = 2A 100 7 5 3 2 10 –1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 80 On-State Voltage (V) 3 2 VGM = 10V PG(AV) = 0.5W Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 90 0 100 4.0 103 7 5 4 3 2 102 7 5 4 3 2 101 Typical Example IRGT III IFGT I, IRGT I –60 –40 –20 0 20 40 60 80 100 120140160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 Typical Example 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100120140160 Junction Temperature (°C) R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) 102 7 5 Rated Surge On-State Current 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 8 BCR8CM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 14 140 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 4 6 8 2 0 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 Curves apply regardless of 40 conduction angle All fins are black Resistive, painted aluminum 20 inductive loads Natural convection and greased 0 0 2 4 6 8 10 12 14 16 Ambient Temperature (°C) Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 16 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 Typical Example 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100120 140160 Junction Temperature (°C) R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100120140160 Junction Temperature (°C) Page 4 of 8 Preliminary Latching Current vs. Junction Temperature 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 + + 2 T2 , G Typical Example T2–, G– Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 0 40 80 120 160 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120140160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 100 –40 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 100 7 0 10 Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR8CM-12LB 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 III Quadrant 3 2 I Quadrant Minimum Characteristics Value 10 0 7 0 10 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 8 BCR8CM-12LB Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 Typical Example IFGT I IRGT I IRGT III 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac Load 6Ω C1 A 6V V Test Procedure I R1 A 6V 330Ω V C0 R0 330Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Page 6 of 8 BCR8CM-12LB Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS1028EJ0400 Rev.4.00 Feb 25, 2013 Page 7 of 8 BCR8CM-12LB Preliminary Ordering Information Orderable Part Number BCR8CM-12LB#BB0 BCR8CM-12LB-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. 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