ASI HF150-50F Npn silicon rf power transistor Datasheet

HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50S is a 50 V epitaxial
transistor designed for SSB communications.
The device utilizes emitter ballastiong for
ruggedness.
PACKAGE STYLE .500 4L FLG
.112x45°
FEATURES:
L
A
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W (PEP)
• Omnigold™ Metalization System
• Common Emitter configuration
C
E
FULL R
Ø.125 NOM.
C
B
B
E
H
E
D
G
F
I J
K
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
IC
10 A
VCBO
110 V
B
C
.245 / 6.22
.255 / 6.48
55 V
D
.720 / 18.28
.7.30 / 18.54
VCEO
VEBO
.125 / 3.18
.125 / 3.18
E
4.0 V
PDISS
233 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.75 °C/W
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
L
CHARACTERISTICS
ORDER CODE: ASI10612
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
110
V
BVCES
IC = 100 mA
110
V
BVCEO
IC = 100 mA
55
V
BVEBO
IE = 10 mA
4.0
V
ICEO
VCE = 30 V
5
mA
ICES
VCE = 60 V
5
mA
hFE
VCE = 6 V
43.5
---
Cob
VCB = 50 V
220
pF
-30
dB
dBc
%
GP
IMD3
ηC
IC = 1.4 A
18
f = 1.0 MHz
14
VCE = 50 V
ICQ =100 mA
f1 = 30.000 MHz
POUT = 150 W (PEP)
f2 = 30.001 MHz
37
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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