FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET 200 V, 15 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 15 A, 200 V, RDS(on) = 140 mΩ @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested D ! D G G S " D G! S Absolute Maximum Ratings Symbol VDSS ID " " ! I-PAK D-PAK ! " S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) FQD18N20V2 / FQU18N20V2 200 Unit V 15 A 9.75 A 60 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 8.3 6.5 2.5 mJ V/ns W 83 0.67 -55 to +150 W W/°C °C 300 °C FQD18N20V2 / FQU18N20V2 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 340 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W 1.5 * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET April 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.12 0.14 Ω -- 11 -- S -- 830 1080 pF -- 200 260 pF -- 25 33 pF -- 70 -- pF -- 135 -- pF ns Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A gFS Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDS = 160 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 160 V, VGS = 0 V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 18 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4, 5) -- 16 40 -- 133 275 ns -- 38 85 ns -- 62 135 ns -- 20 26 nC -- 5.6 -- nC -- 10 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 ISM -- -- 60 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 15 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 158 -- ns Qrr Reverse Recovery Charge -- 1.0 -- µC VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Electrical Characteristics VGS Top : 15.0 V 10.0 V ID, Drain Current [A] 10 8.0 V 1 7.0 V 1 ID , Drain Current [A] 6.5 V 6.0 V Bottom : 10 5.5 V 0 ※ Notes : 10 -1 150℃ 10 25℃ -55℃ 0 10 1. 250μ s Pulse Test ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 1 -1 10 VDS, Drain-Source Voltage [V] 4 5 Figure 1. On-Region Characteristics 6 7 8 9 VGS , Gate-Source Voltage [V] 10 Figure 2. Transfer Characteristics 0.4 VGS = 10V IDR , Reverse Drain Current [A] R DS(ON) [Ω ], Drain-Source On-Resistance 0.5 1 10 VGS = 20V 0.3 0.2 0 10 0.1 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 0 10 20 30 40 50 60 -1 10 ID, Drain Current [A] 0.2 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2500 Ciss = C gs + Cgd (Cds = shorted) Coss = Cds + Cgd 1. VGS = 0 V 2. f = 1 MHz Ciss 1000 Coss 500 Crss 0 -1 10 VGS , Gate-Source Voltage [V] ※ Notes : 1500 VDS = 40V 10 Crss = C gd 2000 Capacitance [pF] 0.4 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 18A 10 0 10 1 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 0 0 5 10 15 20 25 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 2.5 R DS(ON) , (Normalized) 1.1 1.0 ※ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μ A 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 0.5 1. VGS = 10 V 2. ID = 7.5 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 20 15 ID, Drain Current [A] ID , Drain Current [A] 200 is Limited by R DS(on) 2 100 us 1 ms 1 10 ms DC 10 150 Figure 8. On-Resistance Variation vs. Temperature Operation in This Area 10 100 o Figure 7. Breakdown Voltage Variation vs. Temperature 10 50 TJ, Junction Temperature [ C] 0 ※ Notes : o 1. TC = 25 C 10 5 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 0 1 10 10 10 2 50 75 1. Z JC (t) = 1 .5 ℃ /W M a x . 2 . D u ty F a c to r, D = t1 /t2 0 .0 2 0 .0 1 3. T -5 JM - T C = P * Z D M θ JC (t) PDM t1 -2 10 θ 0 .0 5 s in g le p u ls e θ Z N o te s : ※ -1 JC (t) , T h e r m a l R e s p o n s e D = 0 .5 0 .2 10 150 0 0 .1 10 125 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Typical Characteristics FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V tp ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. 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