ON MPS6717 One watt amplifier transistor npn silicon Datasheet

MPS6717
One Watt Amplifier
Transistor
NPN Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
80
Vdc
Collector −Base Voltage
VCBO
80
Vdc
Emitter −Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
1
2
TO−92 (TO−226)
CASE 29−10
STYLE 1
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
MPS
6717
AYWW G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS6717 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS6717
MPS6717G
MPS6717RLRA
MPS6717RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Package
Shipping †
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS6717/D
MPS6717
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
10
mAdc
80
50
−
250
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
VCE(sat)
−
0.5
Vdc
Base −Emitter On Voltage
(IC = 250 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
1.2
Vdc
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
30
pF
Small−Signal Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
hfe
2.5
25
−
SMALL− SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
hFE , DC CURRENT GAIN
400
TJ = 125°C
VCE = 1.0 V
200
25°C
−55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
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2
50
70
100
200
300
500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
MPS6717
1.0
1.0
TJ = 25°C
TJ = 25°C
0.8
IC = 10 mA
0.6
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
0.8
500 mA
0.4
0.2
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.05
0.1
0.2
1.0
0.5
2.0
5.0
IB, BASE CURRENT (mA)
10
20
0
0.5
50
1.0
2.0
Figure 2. Collector Saturation Region
20
5.0
10
50
100
IC, COLLECTOR CURRENT (mA)
500
Figure 3. “On” Voltages
80
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
−0.8
TJ = 25°C
60
C, CAPACITANCE (pF)
−1.2
−1.6
qVB for VBE
−2.0
−2.4
40
Cibo
20
10
8.0
6.0
−2.8
0.5
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Base−Emitter Temperature Coefficient
50
100
Figure 5. Capacitance
300
200
VCE = 2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
200
100
70
50
DUTY CYCLE ≤ 10%
2k
1.0 ms
1k
100 ms
500
TA = 25°C
200
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100
50
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
10
1.0
200
Figure 6. Current−Gain — Bandwidth Product
TC = 25°C
1.0 s
dc
MPS6717
2.0
5.0
10
20
60 80 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
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3
MPS6717
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPS6717/D
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