BCD AP2112R5A-1.2TRG1 600ma cmos ldo regulator with enable Datasheet

Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
General Description
Features
The AP2112 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 600mA (min.) continuous load current.
•
•
•
•
•
The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V and
3.3V regulated output, and provides excellent output
accuracy 1.5%, also provides an excellent load
regulation, line regulation and excellent load transient
performance due to very fast loop response. The
AP2112 has built-in auto discharge function.
•
•
•
•
•
•
•
•
The regulator features low power consumption, and
provides SOT-23-5, SOT-89-5, and SOIC-8 packages.
•
•
AP2112
Output voltage accuracy: ±1.5%
Output Current: 600mA (Min.)
Foldback Short Current Protection: 50mA
Enable Function to Turn ON/OFF VOUT
Low Dropout Voltage (3.3V): 250mV (Typ.)
@IOUT=600mA
Excellent Load Regulation: 0.2%/A (Typ.)
Excellent Line Regulation: 0.02%/V (Typ.)
Low Quiescent Current: 55µA (Typ.)
Low Standby Current: 0.01µA (Typ.)
Low Output Noise: 50µVRMS
PSRR: 100Hz -65dB, 1k –65dB
OTSD Protection
Stable with 1.0µF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
Operation Temperature Range: -40°C to 85°C
ESD: MM 400V, HBM 4000V
Applications
•
•
•
SOT-23-5
Laptop computer
Potable DVD
LCD Monitor
SOT-89-5
SOIC-8
Figure 1. Package Type of AP2112
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Pin Configuration
K Package
M Package
SOT-23-5
SOIC-8
R5/R5A Package
SOT-89-5
R5
R5A
VOUT
VIN
5
4
1
2
3
EN
GND
NC
Figure 2. Pin Configuration of AP2112 (Top View)
Pin Descriptions
PIN No.
Name
Descriptions
SOT-23-5
SOT-89-5
SOIC-8
1
4
8
VIN
Input Voltage
2
2
6, 7
GND
GND
5
EN
Chip Enable, H – normal work, L – shutdown output
2, 3, 4
NC
No Connection
1
VOUT
Output Voltage
3
4
5
Aug. 2010
3 (R5)
1 (R5A)
1 (R5)
3 (R5A)
5
Rev 1. 0
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Functional Block Diagram
EN
VIN
Shutdown Logic
Foldback
Current Limit
Thermal
Shutdown
VOUT
3M
VREF
GND
Figure 3. Functional Block Diagram of AP2112
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Ordering Information
AP2112
G1: Green
Circuit Type
Blank: Tube
TR: Tape & Reel
Package
K: SOT-23-5
M: SOIC-8
R5/R5A: SOT-89-5
Package
SOT-23-5
Temperature
Range
-40 to 85°C
Condition
Tape & Reel
1.8V
AP2112K-1.8TRG1
G3M
Tape & Reel
2.5V
AP2112K-2.5TRG1
G3N
Tape & Reel
2.6V
AP2112K-2.6TRG1
G5N
Tape & Reel
3.3V
AP2112K-3.3TRG1
G3P
Tape & Reel
AP2112M-1.2G1
2112M-1.2G1
Tube
AP2112M-1.2TRG1
2112M-1.2G1
Tape & Reel
AP2112M-1.8G1
2112M-1.8G1
Tube
AP2112M-1.8TRG1
2112M-1.8G1
Tape & Reel
AP2112M-2.5G1
2112M-2.5G1
Tube
AP2112M-2.5TRG1
2112M-2.5G1
AP2112M-2.6G1
2112M-2.6G1
AP2112M-2.6TRG1
2112M-2.6G1
AP2112M-3.3G1
2112M-3.3G1
Tube
AP2112M-3.3TRG1
2112M-3.3G1
Tape & Reel
1.2V(R5)
AP2112R5-1.2TRG1
G37D
Tape & Reel
1.8V(R5)
AP2112R5-1.8TRG1
G37E
Tape & Reel
2.5V(R5)
AP2112R5-2.5TRG1
G37F
Tape & Reel
2.6V(R5)
AP2112R5-2.6TRG1
G13F
Tape & Reel
3.3V(R5)
AP2112R5-3.3TRG1
G37G
Tape & Reel
1.2V(R5A)
AP2112R5A-1.2TRG1
G33C
Tape & Reel
2.5V
3.3V
SOT-89-5
-40 to 85°C
-40 to 85°C
Packing Type
G3L
2.6V
SOT-89-5
Marking ID
AP2112K-1.2TRG1
1.8V
-40 to 85°C
Part Number
1.2V
1.2V
SOIC-8
1.2V: Fixed Output 1.2V
1.8V: Fixed Output 1.8V
2.5V: Fixed Output 2.5V
2.6V: Fixed Output 2.6V
3.3V: Fixed Output 3.3V
Tape & Reel
Tube
Tape & Reel
1.8V(R5A)
AP2112R5A-1.8TRG1
G33E
Tape & Reel
2.5V(R5A)
AP2112R5A-2.5TRG1
G28G
Tape & Reel
2.6V(R5A)
AP2112R5A-2.6TRG1
G13E
Tape & Reel
3.3V(R5A)
AP2112R5A-3.3TRG1
G28H
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Operating Junction Temperature
Range
Storage temperature Range
Lead Temperature (Soldering,10
Seconds)
Thermal Resistance （Junction to
Ambient）(No heatsink)
ESD
Symbol
Value
Unit
VCC
6.5
V
TJ
150
ºC
TSTG
-65 to 150
ºC
TLEAD
260
ºC
θJA
SOT-23-5
184
SOIC-8
114
SOT-89-5
120
°C /W
Machine Model
400
V
Human
Model
4000
V
Body
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operation
Range
Aug. 2010
Temperature
Symbol
Min
Max
Unit
VIN
2.5
6.0
V
TA
-40
85
°C
Rev 1. 0
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics
AP2112-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0µF (Ceramic), COUT=1.0µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output
Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Symbol
VOUT
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
VDROP
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature
Coefficient
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
VIN =2.5V,
VOUT=1.182V to 1.218V
Min
Typ
Max
Unit
VOUT
*98.5%
1.2
VOUT
*101.5%
V
600
mA
VIN=2.5V, 1mA ≤ IOUT ≤600mA
0.2
2.5V≤VIN≤6V, IOUT=30mA
0.02
IOUT =10mA
1000
1300
IOUT =300mA
1000
1300
IOUT=600mA
1000
1300
55
80
µA
0.01
1.0
µA
VIN=2.5V, IOUT=0mA
VIN=2.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
(△VOUT/VOUT)/ IOUT=30mA
△T
TA =-40°C to 85°C
±0.1
%/A
%/V
mV
dB
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
TS
No Load
EN Pull Down Resistor
RPD
V
VOUT
discharge
Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
RDCHG
Set EN pin at Low
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
°C
SOT-23-5
96
SOIC-8
75
SOT-89-5
47
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-1.8 Electrical Characteristic (Note 2)
VIN=2.8V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
1.8
VOUT
*101.5%
V
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)/ △T
VIN=2.8V,
VOUT=1.773V to 1.827V
VOUT=1.8V,
VIN=VOUT+1V,
1mA ≤ IOUT ≤600mA
600
mA
0.2
%/A
2.8V≤VIN≤6V, IOUT=30mA
0.02
±0.1
IOUT =10mA
500
700
IOUT =300mA
500
700
IOUT=600mA
500
700
VIN=2.8V, IOUT=0mA
55
80
µA
0.01
1.0
µA
VIN=2.8V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=2.8V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
%/V
mV
dB
IOUT=30mA
TA =-40°C to 85°C
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
TS
No Load
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
Set EN pin at Low
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
°C
SOT-23-5
96
SOIC-8
75
SOT-89-5
47
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
2.5
VOUT
*101.5%
V
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)/ △T
VIN=3.5V, VOUT=2.463V to
2.537V
VOUT=2.5V,
VIN=VOUT+1V,
1mA ≤ IOUT ≤600mA
600
mA
0.2
3.5V≤VIN≤6V, IOUT=30mA
%/A
0.02
±0.1
IOUT =10mA
5
8
IOUT =300mA
125
200
IOUT=600mA
250
400
VIN=3.5V, IOUT=0mA
55
80
µA
0.01
1.0
µA
VIN=3.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
%/V
mV
dB
IOUT=30mA
TA =-40°C to 85°C
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
TS
No Load
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
Set EN pin at Low
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
°C
SOT-23-5
96
SOIC-8
75
SOT-89-5
47
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-2.6 Electrical Characteristic (Note 2)
VIN=3.6V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
VIN =3.6V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
2.6
VOUT
*101.5%
V
VIN=3.6V, VOUT=2.561V to
2.639V
VIN=VOUT+1V,
(△VOUT/VOUT)/ △ VOUT=2.6V,
1mA ≤ IOUT ≤600mA
IOUT
(△VOUT/VOUT)/ △
3.6V≤VIN≤6V, IOUT=30mA
VIN
IOUT(MAX)
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
600
mA
0.2
%/A
0.02
±0.1
IOUT =10mA
5
8
IOUT =300mA
125
200
IOUT=600mA
250
400
VIN=3.6V, IOUT=0mA
55
80
µA
0.01
1.0
µA
VIN=3.6V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=3.6V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
( △ VOUT/VOUT)/ △ IOUT=30mA
TA =-40°C to 85°C
T
%/V
mV
dB
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
TS
No Load
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
Set EN pin at Low
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
°C
SOT-23-5
96
SOIC-8
75
SOT-89-5
47
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
3.3
VOUT
*101.5%
V
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)/ △T
VIN=4.3V,
3.350V
VOUT=3.251V
to
600
mA
VIN=4.3V, 1mA ≤ IOUT ≤600mA
0.2
4.3V≤VIN≤6V, IOUT=30mA
0.02
±0.1
IOUT =10mA
5
8
IOUT =300mA
125
200
IOUT=600mA
250
400
VIN=4.3V, IOUT=0mA
55
80
µA
0.01
1.0
µA
VIN=4.3V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
%/A
%/V
mV
dB
IOUT=30mA
TA =-40°C to 85°C
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
TS
No Load
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
Set EN pin at Low
20
µs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
°C
SOT-23-5
96
SOIC-8
75
SOT-89-5
47
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
1.6
4.0
1.4
3.5
1.2
3.0
Output Voltage(V)
Output Voltage (V)
Typical Performance Characteristics
1.0
0.8
NO Load
O
TA=-40 C
0.6
2.5
2.0
No Load
1.5
o
TA=-40 C
O
TA=25 C
0.4
o
TA=25 C
1.0
O
o
TA=85 C
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
TA=85 C
0.5
VOUT=1.2V
6.0
VOUT=3.3V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Input Voltage (V)
Figure 4. Output Voltage vs. Input Voltage
5.0
5.5
6.0
Figure 5. Output Voltage vs. Input Voltage
70
70
No Load
68
66
VIN=2.5V
64
No Load
60
Quiescent Current_IQ (µA)
Quiescent Current (µA)
4.5
Input Voltage(V)
62
60
58
56
54
52
50
40
O
TA=-40 C
30
TA=25 C
20
TA=85 C
O
O
10
50
0
48
46
-40.0
-20.0
0.0
20.0
40.0
60.0
1.0
80.0
O
Temperature ( C)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage_VIN (V)
Figure 6. Quiescent Current vs. Temperature
Aug. 2010
1.5
Figure 7. Quiescent Current vs. Input Voltage
Rev 1. 0
BCD Semiconductor Manufacturing Limited
11
6.0
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Typical Performance Characteristics (Continued)
3.35
1.208
VIN=2.5V
3.34
CIN=1µF
3.33
COUT=1µF
Output Voltage(V)
Output Voltage _ VOUT (V)
1.210
1.206
1.204
1.202
VIN=4.3V
CIN=1µF
COUT=1µF
3.32
3.31
3.30
3.29
IOUT=10mA
IOUT=10mA
3.28
IOUT=100mA
IOUT=100mA
3.27
IOUT=300mA
IOUT=600mA
IOUT=300mA
3.26
IOUT=600mA
1.200
-40.0
-20.0
0.0
20.0
40.0
60.0
3.25
-40
80.0
-20
0
20
40
60
80
o
Temperature( C)
O
Temperature ( C)
Figure 8. Output Voltage vs. Temperature
Figure 9. Output Voltage vs. Temperature
1.3
4.0
1.2
1.1
O
3.5
0.9
TA=25 C
3.0
0.8
TA=85 C
TA= -40 C
O
O
Output Voltage (V)
Output Voltage (V)
1.0
0.7
0.6
0.5
0.4
0.3
VIN=4.3V
2.5
o
TA=-40 C
o
2.0
TA= 25 C
1.5
TA= 85 C
o
1.0
0.5
0.2
VIN=2.5V
0.1
0.0
0.0
-0.5
0.0
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Output Current (A)
Output Current (A)
Figure 10. Output Voltage vs. Output Current
Aug. 2010
0.1
1.0
Figure 11. Output Voltage vs. Output Current
Rev 1. 0
BCD Semiconductor Manufacturing Limited
12
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Typical Performance Characteristics (Continued)
4.0
1.2
3.5
VIN=2V
VIN=2.5V
3.0
VIN=5V
0.8
Output Voltage (V)
Output Voltage (V)
1.0
VIN=5.5V
VIN=6V
0.6
0.4
O
VIN=4.0V
VIN=4.3V
2.5
VIN=5.0V
2.0
VIN=5.5V
VIN=6.0V
1.5
1.0
o
TA=25 C
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
TA=25 C
CIN=1µF
0.5
COUT=1µF
0.0
0.8
0.9
CIN=1µF
COUT=1µF
0.0
1.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Output Current (A)
Output Current (A)
Figure 12. Output Voltage vs. Output Current
Figure 13. Output Voltage vs. Output Current
260
350
240
o
300
TA=-40 C
220
250
Ground Current (µA)
Dropout Voltage (mV)
o
TA= 25 C
o
TA= 85 C
VOUT=3.3V
200
150
100
200
180
o
TA=-40 C
o
TA= 25 C
o
TA= 85 C
VIN=4.3V
160
140
120
100
80
50
60
0
0.0
0.1
0.2
0.3
0.4
0.5
40
0.0
0.6
0.2
0.3
0.4
0.5
0.6
Output Current (A)
Output Current (A)
Figure 14. Dropout Voltage vs. Output Current
Aug. 2010
0.1
Figure 15. Ground Current vs. Output Current
Rev 1. 0
BCD Semiconductor Manufacturing Limited
13
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Typical Performance Characteristics (Continued)
70
VIN=2.5V, CIN=1µF, COUT=1µF
65
PSRR (dB)
60
CH1: VOUT
10mV/div
55
IOUT=10mA
50
600mA
IOUT=100mA
45
IOUT=300mA
40
VOUT=1.2V
35
VIN=2.5V
0mA
CH2: IOUT
200mA/div
Ripple=0.5V
30
100
20
1k
10k
100k
Frequency (Hz)
Figure 16. PSRR vs. Frequency
Figure 17. Load Transient
VIN
(2V/div)
VIN
(2V/div)
VEN
(2V/div)
VEN
(2V/div)
VOUT
(2V/div)
VOUT
(2V/div)
20µs/div
200µs/div
Figure 18. Enable On
Aug. 2010
Figure 19. Enable Off
Rev 1. 0
BCD Semiconductor Manufacturing Limited
14
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Typical Application (Note 4)
VOUT
VIN
CIN
1 F
1.2V/1.8V/
2.5V/2.6V/
3.3V
COUT
1 F
AP2112
VEN
ON
OFF
GND
Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0µF ceramic capacitor is selected as
input/output capacitors.
Figure 20. AP2112 Typical Application
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
15
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.950(0.037)
TYP
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
16
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Mechanical Dimensions (Continued)
Aug. 2010
Unit: mm(inch)
1.100(0.043)
0.900(0.035)
3.940(0.155)
4.250(0.167)
SOT-89-5
Rev 1. 0
BCD Semiconductor Manufacturing Limited
17
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Mechanical Dimensions (Continued)
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.800(0.031)
0.300(0.012)
R0.150(0.006)
0.100(0.004)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.190(0.007)
0.250(0.010)
1°
5°
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Aug. 2010
Rev 1. 0
BCD Semiconductor Manufacturing Limited
18
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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