Digitron BTC08-100A Silicon bidirectional thyristor Datasheet

DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage
(TJ = 110°C)
BTC08-100(A)
BTC08-200(A)
BTC08-400(A)
BTC08-600(A)
VDRM
RMS on-state current (TC = 72°C)
IT(RMS)
Peak surge current
(1 cycle, 50Hz, TJ = -40 to +110°C)
ITSM
Circuit fusing considerations (TJ = -40 to 110°C , t = 10ms)
I2t
18
A2s
Peak gate power (pulse width = 10µs)
PGM
10
Watts
(1)
Average gate power (TC = 80°C, t = 10ms)
100
200
400
600
Volts
8.0
Amps
Amps
60
PG(AV)
0.5
Watts
Peak gate current (pulse width = 10µs)
IGM
3.5
Amps
Operating junction temperature range
TJ
-40 to +110
°C
Tstg
-40 to +150
°C
di/dt
10
A/µs
Storage temperature range
ITM = 12A, IG = 200mA
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
2.2
°C/W
Thermal resistance, junction to ambient
RӨJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Peak blocking current (either direction)
(Rated VDRM @ TJ = 110°C, gate open)
IDRM
Peak on-state voltage (either direction)
(ITM = 10A peak)
VTM
Gate trigger voltage (continuous dc)
(main terminal voltage = 12V, RL = 100Ω)
All types, all quadrants
(main terminal voltage = rated VDRM, RL = 10kΩ, TJ = 110°C)
All types, all quadrants
VGTM
Holding current (either direction)
(main terminal source voltage= 12V, gate open, initiating current = 1.0A)
TC = -40°C
TC = 25°C
IH
Latching current
(main terminal source voltage = 24V, gate trigger source = 15V, 100Ω)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
IL
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Min
Typ.
Max
-
-
1.0
-
1.5
1.75
-
-
2.5
0.2
-
-
-
-
100
45
-
-
100
100
200
[email protected]
www.digitroncorp.com
Rev. 20130204
Unit
mA
Volts
Volts
mA
mA
DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Characteristic
Symbol
Critical rate of rise of off-state voltage
(Rated VDRM, exponential voltage rise, gate open, TC = 100°C)
dv/dt
Blocking voltage application rate at commutation
(@ VDRM, gate open commutating di/dt = 3.2A/ms)
dv/dt(c)
Min
Typ.
Max
50
100
-
4
-
-
Unit
V/µs
V/µs
QUADRANT
Characteristic
Symbol
Peak gate trigger current
(main terminal voltage = 12V, RL = 100Ω)
BTC08 SERIES, TJ = 25°C
BTC08 SERIES, TJ = -40°C
BTC08-()A SERIES, TJ = 25°C
BTC08-()A SERIES, TJ = -40°C
IGTM
I
mA
II
mA
III
mA
IV
mA
50
100
50
100
50
100
50
100
50
100
50
100
100
200
MECHANICAL CHARACTERISTIC
Case
TO-220AB
Marking
Body painted, alpha-numeric
Pin out
See below
TO-220AB
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.050
0.045
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
1.270
1.140
2.030
[email protected]
www.digitroncorp.com
Rev. 20130204
DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
144 Market Street
Kenilworth NJ 07033 USA
SILICON BIDIRECTIONAL THYRISTORS
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130204
DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
144 Market Street
Kenilworth NJ 07033 USA
SILICON BIDIRECTIONAL THYRISTORS
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130204
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