STMicroelectronics M25P80VMP6T 1 mbit, low voltage, serial flash memory with 25 mhz spi bus interface Datasheet

M25P10-A
1 Mbit, Low Voltage, Serial Flash Memory
With 50MHz SPI Bus Interface
FEATURES SUMMARY
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■
■
■
■
■
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1 Mbit of Flash Memory
Page Program (up to 256 Bytes) in 1.4ms
(typical)
Sector Erase (256 Kbit) in 0.8s (typical)
Bulk Erase (1 Mbit) in 2.5s (typical)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
50MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature (11h)
– JEDEC Standard two-Byte Signature
(2011h)
– RES Instruction, One-Byte, Signature
(10h), for backward compatibility
More than 100,000 Erase/Program Cycles per
Sector
More than 20 Years’ Data Retention
Figure 1. Packages
8
1
SO8 (MN)
150 mil width
VDFPN8 (MP)
(MLP8)
March 2005
1/41
M25P10-A
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. SO and VDFPN Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
SIGNAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SPI MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Bus Master and Memory Devices on the SPI Bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. SPI Modes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
OPERATING FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Page Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Sector Erase and Bulk Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Polling During a Write, Program or Erase Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Active Power, Standby Power and Deep Power-Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRWD bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2. Protected Area Sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Hold Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Hold Condition Activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
MEMORY ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 3. Memory Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 4. Instruction Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. Write Enable (WREN) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/41
M25P10-A
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. Write Disable (WRDI) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5. Read Identification (RDID) Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10.Read Identification (RDID) Instruction Sequence and Data-Out Sequence . . . . . . . . . . 15
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. Status Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SRWD bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11.Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence . . . . . . . 16
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 12.Write Status Register (WRSR) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Protection Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Read Data Bytes (READ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 13.Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . 19
Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 14.Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence
and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 15.Page Program (PP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 16.Sector Erase (SE) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Bulk Erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 17.Bulk Erase (BE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 18.Deep Power-down (DP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Release from Deep Power-down and Read Electronic Signature (RES) . . . . . . . . . . . . . . . . . 25
Figure 19.Release from Deep Power-down and Read Electronic Signature (RES) Instruction
Sequence and Data-Out Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 20.Release from Deep Power-down (RES) Instruction Sequence . . . . . . . . . . . . . . . . . . . . 26
POWER-UP AND POWER-DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 21.Power-up Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 8. Power-Up Timing and VWI Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
INITIAL DELIVERY STATE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 10. Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 11. AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 22.AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
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M25P10-A
Table 12. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 13. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 14. Instruction Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 15. AC Characteristics (25MHz Operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 16. AC Characteristics (40MHz Operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 17. AC Characteristics (50MHz Operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 23.Serial Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 24.Write Protect Setup and Hold Timing during WRSR when SRWD=1 . . . . . . . . . . . . . . . 35
Figure 25.Hold Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 26.Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 27.SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline . . . . 37
Table 18. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width,
Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 28.VDFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, Package Outline . . . . . . 38
Table 19. VDFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead,
Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 20. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 21. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
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M25P10-A
SUMMARY DESCRIPTION
The M25P10-A is a 1 Mbit (128K x 8) Serial Flash
Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible
bus.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory is organized as 4 sectors, each containing 128 pages. Each page is 256 bytes wide.
Thus, the whole memory can be viewed as consisting of 512 pages, or 131,072 bytes.
The whole memory can be erased using the Bulk
Erase instruction, or a sector at a time, using the
Sector Erase instruction.
Figure 3. SO and VDFPN Connections
M25P10-A
S
Q
W
VSS
8
7
6
5
1
2
3
4
VCC
HOLD
C
D
AI05761B
Figure 2. Logic Diagram
VCC
D
Q
Note: 1. There is an exposed die paddle on the underside of the
MLP8 package. This is pulled, internally, to VSS, and
must not be allowed to be connected to any other voltage
or signal line on the PCB.
2. See PACKAGE MECHANICAL section for package dimensions, and how to identify pin-1.
C
S
M25P10-A
W
Table 1. Signal Names
HOLD
VSS
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
AI05760
5/41
M25P10-A
SIGNAL DESCRIPTION
Serial Data Output (Q). This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D). This input signal is used to
transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of
Serial Clock (C).
Serial Clock (C). This input signal provides the
timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S). When this input signal is High,
the device is deselected and Serial Data Output
(Q) is at high impedance. Unless an internal Program, Erase or Write Status Register cycle is in
progress, the device will be in the Standby mode
6/41
(this is not the Deep Power-down mode). Driving
Chip Select (S) Low selects the device, placing it
in the Active Power mode.
After Power-up, a falling edge on Chip Select (S)
is required prior to the start of any instruction.
Hold (HOLD). The Hold (HOLD) signal is used to
pause any serial communications with the device
without deselecting the device.
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.
Write Protect (W). The main purpose of this input signal is to freeze the size of the area of memory that is protected against program or erase
instructions (as specified by the values in the BP1
and BP0 bits of the Status Register).
M25P10-A
SPI MODES
These devices can be driven by a microcontroller
with its SPI peripheral running in either of the two
following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on
the rising edge of Serial Clock (C), and output data
is available from the falling edge of Serial Clock
(C).
The difference between the two modes, as shown
in Figure 5., is the clock polarity when the bus
master is in Stand-by mode and not transferring
data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
Figure 4. Bus Master and Memory Devices on the SPI Bus
SDO
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
C Q D
C Q D
C Q D
SPI Memory
Device
SPI Memory
Device
SPI Memory
Device
Bus Master
(ST6, ST7, ST9,
ST10, Others)
CS3
CS2
CS1
S
W
HOLD
S
W
HOLD
S
W
HOLD
AI03746D
Note: 1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.
Figure 5. SPI Modes Supported
CPOL
CPHA
0
0
C
1
1
C
D
Q
MSB
MSB
AI01438B
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M25P10-A
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,
and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the
internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP)
instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the
same page of memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to
be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all
1s (FFh). This can be achieved either a sector at a
time, using the Sector Erase (SE) instruction, or
throughout the entire memory, using the Bulk
Erase (BE) instruction. This starts an internal
Erase cycle (of duration tSE or tBE).
The Erase instruction must be preceded by a Write
Enable (WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status
Register (WRSR), Program (PP) or Erase (SE or
BE) can be achieved by not waiting for the worst
case delay (tW, tPP, tSE, or tBE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous
Write cycle, Program cycle or Erase cycle is complete.
Active Power, Standby Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power mode
until all internal cycles have completed (Program,
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Erase, Write Status Register). The device then
goes in to the Standby Power mode. The device
consumption drops to ICC1.
The Deep Power-down mode is entered when the
specific instruction (the Deep Power-down (DP) instruction) is executed. The device consumption
drops further to ICC2. The device remains in this
mode until another specific instruction (the Release from Deep Power-down and Read Electronic Signature (RES) instruction) is executed.
All other instructions are ignored while the device
is in the Deep Power-down mode. This can be
used as an extra software protection mechanism,
when the device is not in active use, to protect the
device from inadvertent Write, Program or Erase
instructions.
Status Register
The Status Register contains a number of status
and control bits, as shown in Table 6., that can be
read or set (as appropriate) by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected against Program and Erase
instructions.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits
of the Status Register (SRWD, BP1, BP0) become
read-only bits.
M25P10-A
Protection Modes
The environments where non-volatile memory devices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P10-A features the following data protection mechanisms:
■
Power On Reset and an internal timer (tPUW)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
■
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
■
All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit. This bit is returned to its reset state
by the following events:
– Power-up
– Write Status Register (WRSR) instruction
completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
■
■
■
– Write Disable (WRDI) instruction completion
The Block Protect (BP1, BP0) bits allow part of
the memory to be configured as read-only.
This is the Software Protected Mode (SPM).
The Write Protect (W) signal, in co-operation
with the Status Register Write Disable
(SRWD) bit, allows the Block Protect (BP1,
BP0) bits and Status Register Write Disable
(SRWD) bit to be write-protected. This is the
Hardware Protected Mode (HPM).
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Powerdown instruction).
Table 2. Protected Area Sizes
Status Register
Content
BP1 Bit
Memory Content
BP0 Bit
Protected Area
Unprotected Area
1
0
0
none
All sectors (four sectors: 0, 1, 2 and 3)
0
1
Upper quarter (Sector 3)
Lower three-quarters (three sectors: 0 to 2)
1
0
Upper half (two sectors: 2 and 3)
Lower half (Sectors 0 and 1)
1
1
All sectors (four sectors: 0, 1, 2 and 3)
none
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) are 0.
9/41
M25P10-A
Hold Condition
The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this
signal Low does not terminate any Write Status
Register, Program or Erase cycle that is currently
in progress.
To enter the Hold condition, the device must be
selected, with Chip Select (S) Low.
The Hold condition starts on the falling edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low (as shown in Figure 6.).
The Hold condition ends on the rising edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low.
If the falling edge does not coincide with Serial
Clock (C) being Low, the Hold condition starts after Serial Clock (C) next goes Low. Similarly, if the
rising edge does not coincide with Serial Clock (C)
being Low, the Hold condition ends after Serial
Clock (C) next goes Low. (This is shown in Figure
6.).
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
Normally, the device is kept selected, with Chip
Select (S) driven Low, for the whole duration of the
Hold condition. This is to ensure that the state of
the internal logic remains unchanged from the moment of entering the Hold condition.
If Chip Select (S) goes High while the device is in
the Hold condition, this has the effect of resetting
the internal logic of the device. To restart communication with the device, it is necessary to drive
Hold (HOLD) High, and then to drive Chip Select
(S) Low. This prevents the device from going back
to the Hold condition.
Figure 6. Hold Condition Activation
C
HOLD
Hold
Condition
(standard use)
Hold
Condition
(non-standard use)
AI02029D
10/41
M25P10-A
MEMORY ORGANIZATION
The memory is organized as:
■
131,072 bytes (8 bits each)
■
4 sectors (256 Kbits, 32768 bytes each)
■
512 pages (256 bytes each).
Each page can be individually programmed (bits
are programmed from 1 to 0). The device is Sector
or Bulk Erasable (bits are erased from 0 to 1) but
not Page Erasable.
Table 3. Memory Organization
Sector
Address Range
3
18000h
1FFFFh
2
10000h
17FFFh
1
08000h
0FFFFh
0
00000h
07FFFh
Figure 7. Block Diagram
HOLD
W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
1FFFFh
Y Decoder
18000h
Size of the
read-only
memory area
10000h
08000h
000FFh
00000h
256 Bytes (Page Size)
X Decoder
AI03747D
11/41
M25P10-A
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4.
Every instruction sequence starts with a one-byte
instruction code. Depending on the instruction,
this might be followed by address bytes, or by data
bytes, or by both or none. Chip Select (S) must be
driven High after the last bit of the instruction sequence has been shifted in.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read), Read
Identification (RDID), Read Status Register (RDSR) or Release from Deep Power-down, and
Read Electronic Signature (RES) instruction, the
shifted-in instruction sequence is followed by a
data-out sequence. Chip Select (S) can be driven
High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase
(SE), Bulk Erase (BE), Write Status Register
(WRSR), Write Enable (WREN), Write Disable
(WRDI) or Deep Power-down (DP) instruction,
Chip Select (S) must be driven High exactly at a
byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses
after Chip Select (S) being driven Low is an exact
multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or
Erase cycle are ignored, and the internal Write
Status Register cycle, Program cycle or Erase cycle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
0
1 to ∞
WRSR
Write Status Register
0000 0001
01h
0
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to ∞
0000 1011
0Bh
3
1
1 to ∞
RDID(1)
FAST_READ Read Data Bytes at Higher Speed
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
Release from Deep Power-down,
and Read Electronic Signature
0
3
1010 1011
ABh
1 to ∞
0
0
0
RES
Release from Deep Power-down
Note: 1. The Read Identification (RDID) instruction is available only in products with Process Technology code X (see Application Note
AN1995).
12/41
M25P10-A
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 8.)
sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register
(WRSR) instruction.
The Write Enable (WREN) instruction is entered
by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S)
High.
Figure 8. Write Enable (WREN) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281E
13/41
M25P10-A
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9.)
resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by
driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under
the following conditions:
– Power-up
– Write Disable (WRDI) instruction completion
– Write Status Register (WRSR) instruction completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
Figure 9. Write Disable (WRDI) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750D
14/41
M25P10-A
The device is first selected by driving Chip Select
(S) Low. Then, the 8-bit instruction code for the instruction is shifted in. This is followed by the 24-bit
device identification, stored in the memory, being
shifted out on Serial Data Output (Q), each bit being shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 10.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at any time
during data output.
When Chip Select (S) is driven High, the device is
put in the Stand-by Power mode. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
Read Identification (RDID)
The Read Identification (RDID) instruction is available in products with Process Technology code X
only.
The Read Identification (RDID) instruction allows
the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The
manufacturer identification is assigned by JEDEC,
and has the value 20h for STMicroelectronics. The
device identification is assigned by the device
manufacturer, and indicates the memory type in
the first byte (20h), and the memory capacity of the
device in the second byte (11h).
Any Read Identification (RDID) instruction while
an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in
progress.
Table 5. Read Identification (RDID) Data-Out Sequence
Device Identification
Manufacturer Identification
20h
Memory Type
Memory Capacity
20h
11h
Figure 10. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
C
Instruction
D
Manufacturer Identification
Device Identification
High Impedance
Q
15 14 13
MSB
3
2
1
0
MSB
AI06809b
15/41
M25P10-A
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is
set, when set to 0 the internal Write Enable Latch
is reset and no Write Status Register, Program or
Erase instruction is accepted.
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected against Program and Erase
instructions. These bits are written with the Write
Status Register (WRSR) instruction. When one or
both of the Block Protect (BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table
2.) becomes protected against Page Program
(PP) and Sector Erase (SE) instructions. The
Block Protect (BP1, BP0) bits can be written provided that the Hardware Protected mode has not
been set. The Bulk Erase (BE) instruction is executed if, and only if, both Block Protect (BP1, BP0)
bits are 0.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode (when the Status Register Write
Disable (SRWD) bit is set to 1, and Write Protect
(W) is driven Low). In this mode, the non-volatile
bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register
(WRSR) instruction is no longer accepted for execution.
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a
Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress,
it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the
device. It is also possible to read the Status Register continuously, as shown in Figure 11.
Table 6. Status Register Format
b7
SRWD
b0
0
0
0
BP1
BP0
WEL
WIP
Status Register Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
The status and control bits of the Status Register
are as follows:
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1,
such a cycle is in progress, when reset to 0 no
such cycle is in progress.
Figure 11. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031E
16/41
M25P10-A
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded and executed, the device sets
the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is
entered by driving Chip Select (S) Low, followed
by the instruction code and the data byte on Serial
Data Input (D).
The instruction sequence is shown in Figure 12.
The Write Status Register (WRSR) instruction has
no effect on b6, b5, b4, b1 and b0 of the Status
Register. b6, b5 and b4 are always read as 0.
Chip Select (S) must be driven High after the
eighth bit of the data byte has been latched in. If
not, the Write Status Register (WRSR) instruction
is not executed. As soon as Chip Select (S) is driven High, the self-timed Write Status Register cycle
(whose duration is tW) is initiated. While the Write
Status Register cycle is in progress, the Status
Register may still be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block
Protect (BP1, BP0) bits, to define the size of the
area that is to be treated as read-only, as defined
in Table 2. The Write Status Register (WRSR) instruction also allows the user to set or reset the
Status Register Write Disable (SRWD) bit in accordance with the Write Protect (W) signal. The
Status Register Write Disable (SRWD) bit and
Write Protect (W) signal allow the device to be put
in the Hardware Protected Mode (HPM). The Write
Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is
entered.
The protection features of the device are summarized in Table 7.
When the Status Register Write Disable (SRWD)
bit of the Status Register is 0 (its initial delivery
state), it is possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit has
previously been set by a Write Enable (WREN) instruction, regardless of the whether Write Protect
(W) is driven High or Low.
When the Status Register Write Disable (SRWD)
bit of the Status Register is set to 1, two cases
need to be considered, depending on the state of
Write Protect (W):
– If Write Protect (W) is driven High, it is possible
to write to the Status Register provided that the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
– If Write Protect (W) is driven Low, it is not possible to write to the Status Register even if the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
(Attempts to write to the Status Register are rejected, and are not accepted for execution). As
a consequence, all the data bytes in the memory area that are software protected (SPM) by the
Block Protect (BP1, BP0) bits of the Status Register, are also hardware protected against data
modification.
Regardless of the order of the two events, the
Hardware Protected Mode (HPM) can be entered:
– by setting the Status Register Write Disable
(SRWD) bit after driving Write Protect (W) Low
– or by driving Write Protect (W) Low after setting
the Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode
(HPM) once entered is to pull Write Protect (W)
High.
If Write Protect (W) is permanently tied High, the
Hardware Protected Mode (HPM) can never be
activated, and only the Software Protected Mode
(SPM), using the Block Protect (BP1, BP0) bits of
the Status Register, can be used.
17/41
M25P10-A
Figure 12. Write Status Register (WRSR) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282D
Table 7. Protection Modes
W
Signal
SRWD
Bit
1
0
0
0
1
1
0
1
Mode
Write Protection of the Status
Register
Software
Protected
(SPM)
Hardware
Protected
(HPM)
Memory Content
Protected Area(1)
Unprotected Area(1)
Status Register is Writable (if the
WREN instruction has set the WEL
bit)
The values in the SRWD, BP1 and
BP0 bits can be changed
Protected against
Page Program, Sector
Erase and Bulk Erase
Ready to accept Page
Program and Sector
Erase instructions
Status Register is Hardware write
protected
The values in the SRWD, BP1 and
BP0 bits cannot be changed
Protected against
Page Program, Sector
Erase and Bulk Erase
Ready to accept Page
Program and Sector
Erase instructions
Note: 1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 2.
18/41
M25P10-A
next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) instruction.
When the highest address is reached, the address
counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
Read Data Bytes (READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte
address (A23-A0), each bit being latched-in during
the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at
a maximum frequency fR, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 13.
The first byte addressed can be at any location.
The address is automatically incremented to the
Figure 13. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Data Out 1
High Impedance
Q
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI03748D
Note: 1. Address bits A23 to A17 are Don’t Care.
19/41
M25P10-A
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency fC, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 14.
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence
and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
C
Instruction
24 BIT ADDRESS
23 22 21
D
3
2
1
0
High Impedance
Q
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
D
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
Q
7
MSB
6
5
4
3
2
1
0
7
MSB
6
5
4
3
2
1
0
7
MSB
AI04006
Note: 1. Address bits A23 to A17 are Don’t Care.
20/41
M25P10-A
rectly within the same page. If less than 256 Data
bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same
page.
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the selftimed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Page Program (PP) instruction applied to a page
which is protected by the Block Protect (BP1, BP0)
bits (see Table 3. and Table 2.) is not executed.
Page Program (PP)
The Page Program (PP) instruction allows bytes to
be programmed in the memory (changing bits from
1 to 0). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, three address bytes and at least
one data byte on Serial Data Input (D). If the 8
least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end
of the current page are programmed from the start
address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero).
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 15.
If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256
data bytes are guaranteed to be programmed cor-
Figure 15. Page Program (PP) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
MSB
MSB
2078
2079
2077
2076
2075
2074
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
S
1
0
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte 3
1
MSB
0
7
MSB
6
5
4
3
2
Data Byte 256
1
0
7
6
5
4
3
2
MSB
AI04082B
Note: 1. Address bits A23 to A17 are Don’t Care.
21/41
M25P10-A
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP1, BP0)
bits (see Table 3. and Table 2.) is not executed.
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 16.
Figure 16. Sector Erase (SE) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
D
24 Bit Address
23 22
2
1
0
MSB
AI03751D
Note: 1. Address bits A23 to A17 are Don’t Care.
22/41
M25P10-A
in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
tBE) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Bulk Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
The Bulk Erase (BE) instruction is executed only if
both Block Protect (BP1, BP0) bits are 0. The Bulk
Erase (BE) instruction is ignored if one, or more,
sectors are protected.
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 17.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
Figure 17. Bulk Erase (BE) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
AI03752D
23/41
M25P10-A
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this
mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
to reduce the standby current (from ICC1 to ICC2,
as specified in Table 13.).
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction, and the Read
Identification (RDID) instruction. Issuing the Release from Deep Power-down and Read Electronic Signature (RES) instruction will cause the
device to exit the Deep Power-down mode.
The Release from Deep Power-down, and Read
Electronic Signature (RES) instruction and the
Read Identification (RDID) instruction also allow
the Electronic Signature of the device to be output
on Serial Data Output (Q).
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of tDP before the
supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that
is in progress.
Figure 18. Deep Power-down (DP) Instruction Sequence
S
0
1
2
3
4
5
6
7
tDP
C
Instruction
D
Stand-by Mode
24/41
Deep Power-down Mode
AI03753D
M25P10-A
The Release from Deep Power-down and Read
Electronic Signature (RES) instruction is terminated by driving Chip Select (S) High after the Electronic Signature has been read at least once.
Sending additional clock cycles on Serial Clock
(C), while Chip Select (S) is driven Low, cause the
Electronic Signature to be output repeatedly.
When Chip Select (S) is driven High, the device is
put in the Standby Power mode. If the device was
not previously in the Deep Power-down mode, the
transition to the Standby Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the
Standby Power mode is delayed by tRES2, and
Chip Select (S) must remain High for at least
tRES2(max), as specified in Table 15. Once in the
Standby Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in Figure 20.), still ensures that the device is put into
Standby Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Standby Power mode is immediate. If
the device was previously in the Deep Powerdown mode, though, the transition to the Standby
Power mode is delayed by tRES1, and Chip Select
(S) must remain High for at least tRES1(max), as
specified in Table 15. Once in the Standby Power
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
Release from Deep Power-down and Read
Electronic Signature (RES)
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction. Executing this
instruction takes the device out of the Deep Power-down mode.
The instruction can also be used to read, on Serial
Data Output (Q), the 8-bit Electronic Signature,
whose value for the M25P10-A is 10h.
Except while an Erase, Program or Write Status
Register cycle is in progress, the Release from
Deep Power-down and Read Electronic Signature
(RES) instruction always provides access to the 8bit Electronic Signature of the device, and can be
applied even if the Deep Power-down mode has
not been entered.
Any Release from Deep Power-down and Read
Electronic Signature (RES) instruction while an
Erase, Program or Write Status Register cycle is in
progress, is not decoded, and has no effect on the
cycle that is in progress.
The device is first selected by driving Chip Select
(S) Low. The instruction code is followed by 3
dummy bytes, each bit being latched-in on Serial
Data Input (D) during the rising edge of Serial
Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data
Output (Q), each bit being shifted out during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 19.
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
C
Instruction
23 22 21
D
tRES2
3 Dummy Bytes
3
2
1
0
MSB
Electronic Signature Out
High Impedance
Q
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
Stand-by Mode
AI04047C
Note: The value of the 8-bit Electronic Signature, for the M25P10-A, is 10h.
25/41
M25P10-A
Figure 20. Release from Deep Power-down (RES) Instruction Sequence
S
0
1
2
3
4
5
6
7
tRES1
C
Instruction
D
High Impedance
Q
Deep Power-down Mode
Stand-by Mode
AI04078B
26/41
M25P10-A
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must
not be selected (that is Chip Select (S) must follow
the voltage applied on VCC) until VCC reaches the
correct value:
– VCC(min) at Power-up, and then for a further delay of tVSL
– VSS at Power-down
Usually a simple pull-up resistor on Chip Select (S)
can be used to ensure safe and proper Power-up
and Power-down.
To avoid data corruption and inadvertent write
operations during power-up, a Power On Reset
(POR) circuit is included. The logic inside the
device is held reset while VCC is less than the
Power On Reset (POR) threshold voltage, VWI –
all operations are disabled, and the device does
not respond to any instruction.
Moreover, the device ignores all Write Enable
(WREN), Page Program (PP), Sector Erase (SE),
Bulk Erase (BE) and Write Status Register
(WRSR) instructions until a time delay of tPUW has
elapsed after the moment that VCC rises above the
VWI threshold. However, the correct operation of
the device is not guaranteed if, by this time, VCC is
still below VCC(min). No Write Status Register,
Program or Erase instructions should be sent until
the later of:
– tPUW after VCC passed the VWI threshold
– tVSL after VCC passed the VCC(min) level
These values are specified in Table 8.
If the delay, tVSL, has elapsed, after VCC has risen
above VCC(min), the device can be selected for
READ instructions even if the tPUW delay is not yet
fully elapsed.
At Power-up, the device is in the following state:
– The device is in the Standby mode (not the
Deep Power-down mode).
– The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail
decoupling, to stabilize the VCC supply. Each
device in a system should have the VCC rail
decoupled by a suitable capacitor close to the
package pins. (Generally, this capacitor is of the
order of 0.1µF).
At Power-down, when VCC drops from the
operating voltage, to below the Power On Reset
(POR) threshold voltage, VWI, all operations are
disabled and the device does not respond to any
instruction. (The designer needs to be aware that
if a Power-down occurs while a Write, Program or
Erase cycle is in progress, some data corruption
can result.)
Figure 21. Power-up Timing
VCC
VCC(max)
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
VCC(min)
Reset State
of the
Device
tVSL
Read Access allowed
Device fully
accessible
VWI
tPUW
time
AI04009C
27/41
M25P10-A
Table 8. Power-Up Timing and VWI Threshold
Symbol
1
Parameter
Min.
Max.
Unit
VCC(min) to S low
10
tPUW1
Time delay to Write instruction
1
10
ms
VWI1
Write Inhibit Voltage
1
2
V
tVSL
µs
Note: 1. These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each byte contains
28/41
FFh). The Status Register contains 00h (all Status
Register bits are 0).
M25P10-A
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 9. Absolute Maximum Ratings
Symbol
Parameter
TSTG
Storage Temperature
TLEAD
Lead Temperature during Soldering
Min.
Max.
Unit
–65
150
°C
(1)
°C
VIO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
VCC
Supply Voltage
–0.6
4.0
V
VESD
Electrostatic Discharge Voltage (Human Body model) 3
–2000
2000
V
Note: 1. Compliant with the JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)
ECOPACK®
7191395 specification,
29/41
M25P10-A
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parameters.
Table 10. Operating Conditions
Symbol
VCC
TA
Parameter
Min.
Max.
Unit
Supply Voltage
2.7
3.6
V
Ambient Operating Temperature
–40
85
°C
Min.
Max.
Unit
Table 11. AC Measurement Conditions
Symbol
CL
Parameter
Load Capacitance
30
Input Rise and Fall Times
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VCC / 2
V
Output Timing Reference Voltages
Note: 1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 22. AC Measurement I/O Waveform
Input Levels
Input and Output
Timing Reference Levels
0.8VCC
0.7VCC
0.5VCC
0.3VCC
0.2VCC
AI07455
Table 12. Capacitance
Symbol
COUT
CIN
Parameter
Output Capacitance (Q)
Input Capacitance (other pins)
Test Condition
Max.
Unit
VOUT = 0V
8
pF
VIN = 0V
6
pF
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 20 MHz.
30/41
Min.
M25P10-A
Table 13. DC Characteristics
Symbol
Test Condition
(in addition to those in Table 10.)
Parameter
Min.
Max.
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
S = VCC, VIN = VSS or VCC
50
µA
ICC2
Deep Power-down Current
S = VCC, VIN = VSS or VCC
5
µA
C = 0.1VCC / 0.9.VCC at 50MHz,
Q = open
8
mA
C = 0.1VCC / 0.9.VCC at 20MHz,
Q = open
4
mA
ICC3
Operating Current (READ)
ICC4
Operating Current (PP)
S = VCC
15
mA
ICC5
Operating Current (WRSR)
S = VCC
15
mA
ICC6
Operating Current (SE)
S = VCC
15
mA
ICC7
Operating Current (BE)
S = VCC
15
mA
VIL
Input Low Voltage
– 0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6 mA
0.4
V
VOH
Output High Voltage
IOH = –100 µA
VCC–0.2
V
Table 14. Instruction Times
Test conditions specified in Table 10. and Table 11.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
5
15
ms
tW
Write Status Register Cycle Time
tPP
Page Program Cycle Time
1.4
5
ms
tSE
Sector Erase Cycle Time
0.8
3
s
tBE
Bulk Erase Cycle Time
2.5
6
s
31/41
M25P10-A
Table 15. AC Characteristics (25MHz Operation)
Test conditions specified in Table 10. and Table 11.
Symbol
Alt.
Parameter
Min.
fC
fC
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, DP, RES, WREN, WRDI, RDSR, WRSR
Clock Frequency for READ instructions
fR
Typ.
Max.
Unit
D.C.
25
MHz
D.C.
20
MHz
tCH (1)
tCLH
Clock High Time
18
ns
tCL (1)
tCLL
Clock Low Time
18
ns
tCLCH (2)
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL (2)
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
10
ns
S Not Active Hold Time (relative to C)
10
ns
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
10
ns
tSHCH
S Not Active Setup Time (relative to C)
10
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ (2)
tDIS
Output Disable Time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
10
ns
tCHHH
HOLD Hold Time (relative to C)
10
ns
tHHCH
HOLD Setup Time (relative to C)
10
ns
tCHHL
HOLD Hold Time (relative to C)
10
ns
(2)
tLZ
HOLD to Output Low-Z
15
ns
tHLQZ (2)
tHZ
HOLD to Output High-Z
20
ns
tHHQX
tWHSL (4)
Write Protect Setup Time
20
ns
tSHWL (4)
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
µs
tRES1 (2)
S High to Standby Mode without Electronic Signature Read
3
µs
tRES2 (2)
S High to Standby Mode with Electronic Signature Read
1.8
µs
tDP (2)
Note: 1.
2.
3.
4.
32/41
tCH + tCL must be greater than or equal to 1/ fC
Value guaranteed by characterization, not 100% tested in production.
Expressed as a slew-rate.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
M25P10-A
Table 16. AC Characteristics (40MHz Operation)
40MHz available for products marked since week 20 of 2004, only(5)
Test conditions specified in Table 10. and Table 11.
Symbol
Alt.
Parameter
Min.
fC
fC
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, DP, RES, WREN, WRDI, RDSR, WRSR
Clock Frequency for READ instructions
fR
Typ.
Max.
Unit
D.C.
40
MHz
D.C.
20
MHz
tCH (1)
tCLH
Clock High Time
11
ns
tCL (1)
tCLL
Clock Low Time
11
ns
tCLCH (2)
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL (2)
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ (2)
tDIS
Output Disable Time
9
ns
tCLQV
tV
Clock Low to Output Valid
9
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX (2)
tLZ
HOLD to Output Low-Z
9
ns
tHLQZ (2)
tHZ
HOLD to Output High-Z
9
ns
tWHSL (4)
Write Protect Setup Time
20
ns
tSHWL (4)
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
µs
tRES1 (2)
S High to Standby Mode without Electronic Signature Read
3
µs
tRES2 (2)
S High to Standby Mode with Electronic Signature Read
1.8
µs
tDP (2)
Note: 1.
2.
3.
4.
5.
tCH + tCL must be greater than or equal to 1/ fC
Value guaranteed by characterization, not 100% tested in production.
Expressed as a slew-rate.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Details of how to find the date of marking are given in Application Note, AN1995.
33/41
M25P10-A
Table 17. AC Characteristics (50MHz Operation)
50MHz available only in products with Process Technology code X(5)
Test conditions specified in Table 10. and Table 11.
Symbol
Alt.
fC
fC
fR
Parameter
Min.
Typ.
Max.
Unit
Clock Frequency(1) for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
D.C.
50
MHz
Clock Frequency for READ instructions
D.C.
20
MHz
tCH (1)
tCLH
Clock High Time
9
ns
tCL (1)
tCLL
Clock Low Time
9
ns
tCLCH (2)
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL (2)
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ (2)
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX (2)
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ (2)
tHZ
HOLD to Output High-Z
8
ns
tWHSL (4)
Write Protect Setup Time
20
ns
tSHWL (4)
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
µs
tRES1 (2)
S High to Standby Mode without Electronic Signature
Read
30
µs
tRES2 (2)
S High to Standby Mode with Electronic Signature Read
30
µs
tDP (2)
Note: 1.
2.
3.
4.
5.
34/41
tCH + tCL must be greater than or equal to 1/ fC
Value guaranteed by characterization, not 100% tested in production.
Expressed as a slew-rate.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Details of how to find the process on the device marking are given in Application Note AN1995.
M25P10-A
Figure 23. Serial Input Timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
D
Q
MSB IN
tCLCH
LSB IN
High Impedance
AI01447C
Figure 24. Write Protect Setup and Hold Timing during WRSR when SRWD=1
W
tSHWL
tWHSL
S
C
D
High Impedance
Q
AI07439
35/41
M25P10-A
Figure 25. Hold Timing
S
tHLCH
tCHHL
tHHCH
C
tCHHH
tHLQZ
tHHQX
Q
D
HOLD
AI02032
Figure 26. Output Timing
S
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
tQLQH
tQHQL
D
ADDR.LSB IN
AI01449e
36/41
M25P10-A
PACKAGE MECHANICAL
Figure 27. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline
h x 45˚
A2
A
C
B
ddd
e
D
8
E
H
1
A1
α
L
SO-A
Note: Drawing is not to scale.
Table 18. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width,
Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
A
1.35
A1
Min
Max
1.75
0.053
0.069
0.10
0.25
0.004
0.010
A2
1.10
1.65
0.043
0.065
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
ddd
Typ
0.10
E
3.80
4.00
–
–
H
5.80
h
0.004
0.150
0.157
–
–
6.20
0.228
0.244
0.25
0.50
0.010
0.020
L
0.40
0.90
0.016
0.035
α
0°
8°
0°
8°
N
8
e
1.27
0.050
8
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M25P10-A
Figure 28. VDFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, Package Outline
D
D1
E E1
E2
e
b
θ
A
D2
A2
L
A1 A3
VDFPN-01
Note: Drawing is not to scale.
Table 19. VDFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead,
Package Mechanical Data
millimeter
inches
Symbol
Typ.
A
0.85
A1
0.00
Max.
Typ.
1.00
0.0335
0.05
A2
0.65
0.0256
A3
0.20
0.0079
b
0.40
D
6.00
0.2362
D1
5.75
0.2264
D2
3.40
E
5.00
0.1969
E1
4.75
0.1870
E2
4.00
e
1.27
L
0.60
θ
38/41
Min.
0.35
3.20
3.80
0.48
3.60
4.20
0.0157
0.1339
0.1575
Min.
Max.
0.0394
0.0000
0.0020
0.0138
0.0189
0.1260
0.1417
0.1496
0.1654
0.0197
0.0295
0.0500
0.50
0.75
12°
0.0236
12°
M25P10-A
PART NUMBERING
Table 20. Ordering Information Scheme
Example:
M25P10-A
V MN 6
T
P
Device Type
M25P
Device Function
10-A = 1 Mbit (128K x 8) Enhanced Technology in line
with the M25P05-A, M25P20, M25P40, M25P80
Operating Voltage
V = VCC = 2.7 to 3.6V
Package
MN = SO8 (150 mil width)
MP = VDFPN8 (MLP8)
Temperature Range
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
Plating Technology
blank = Standard SnPb plating
P or G = RoHS compliant
For a list of available options (speed, package,
etc.) or for further information on any aspect of this
device, please contact your nearest ST Sales Office.
39/41
M25P10-A
REVISION HISTORY
Table 21. Document Revision History
Date
Rev.
25-Feb-2001
1.0
Document written
12-Sep-2002
1.1
VFQFPN8 package (MLP8) added. Clarification of descriptions of entering Standby Power
mode from Deep Power-down mode, and of terminating an instruction sequence or data-out
sequence
13-Dec-2002
1.2
Typical Page Program time improved. Write Protect setup and hold times specified, for
applications that switch Write Protect to exit the Hardware Protection mode immediately before
a WRSR, and to enter the Hardware Protection mode again immediately after
21-Feb-2003
1.3
Erroneous address ranges corrected in Memory Organisation table
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added.
40MHz AC Characteristics table included as well as 25MHz. ICC3(max), tSE(typ) and tBE(typ)
values improved. Change of naming for VDFPN8 package
3.0
Devices with Process technology Code X added (Read Identification (RDID) and Table
17., AC Characteristics (50MHz Operation)) added.
SO8 narrow package specifications updated.
Notes 1 and 2 removed from Table 20., Ordering Information Scheme. Note 1 to Table
9., Absolute Maximum Ratings changed, note 2 removed and TLEAD values removed.
Small text changes. End timing line of tSHQZ modified in Figure 26., Output Timing.
08-Mar-2005
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Description of Revision
M25P10-A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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41/41