Fairchild FCH35N60 N-channel superfetâ® mosfet Datasheet

FCH35N60
N-Channel SuperFET® MOSFET
600 V, 35 A, 98 mΩ
Features
Description
• 650 V @ TJ = 150°C
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
• Typ.RDS(on) = 79 mΩ
• Ultra Low Gate Charge ( Typ. Qg = 139 nC )
• Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
• 100% Avalanche Tested
Application
• Solar Inverter
• AC-DC Power Supply
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate-Soure voltage
FCH35N60
600
Unit
V
±30
V
-Continuous (TC = 25oC)
35
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
35
A
EAR
Repetitive Avalanche Energy
(Note 1)
31.25
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
-Continuous (TC = 100oC)
- Pulsed
105
A
(Note 2)
1455
mJ
(Note 3)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
(TC = 25oC)
PD
A
22.2
- Derate above 25oC
312.5
W
2.5
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθCS
Thermal Resistance, Case-to-Heat Sink
RθJA
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
1
Typ.
Max.
-
0.4
0.24
-
-
42
Unit
o
C/W
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
March 2013
Device Marking
FCH35N60
Device
FCH35N60
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
600
-
-
V
ID = 250 μA, VGS = 0 V, TJ = 150oC
-
650
-
V
ID = 250 μA, Referenced to 25oC
-
0.6
-
V/oC
VGS = 0 V, ID = 16 A
-
700
-
V
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
VGS = ±30 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 17.5 A
-
0.079
0.098
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 17.5 A
-
28.8
-
S
VDS = 25 V, VGS = 0 V
f = 1 MHz
-
4990
6640
pF
-
2380
3170
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
140
-
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
-
113
-
pF
Coss eff.
Effective Output Capacitance
VDS = 0 V to 480 V, VGS = 0 V
-
340
-
pF
Qg
Total Gate Charge at 10V
-
139
181
nC
Qgs
Gate to Source Gate Charge
VDS = 480 V, ID = 35 A
VGS = 10 V
-
31
-
nC
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
-
69
-
nC
Drain Open, F= 1 MHZ
-
1.4
-
Ω
-
34
78
ns
VDD = 300 V, ID = 35 A
RG = 4.7 Ω
-
120
250
ns
-
105
220
ns
-
73
155
ns
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
35
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
105
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 35 A
-
-
1.4
V
trr
Reverse Recovery Time
-
614
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 35 A
dIF/dt = 100 A/μs
-
16.3
-
μC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: IAS = 17.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3: ISD ≤ 35 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
2
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
FCH35N60 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
200
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
ID, Drain Current[A]
100
ID, Drain Current[A]
Figure 2. Transfer Characteristics
10
1
o
150 C
10
o
-55 C
o
25 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.3
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
10
1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5
6
7
8
VGS, Gate-Source Voltage[V]
500
IS, Reverse Drain Current [A]
0.20
0.16
0.12
VGS = 10V
VGS = 20V
0.08
100
o
150 C
10
*Note: TC = 25 C
0
25
50
75
ID, Drain Current [A]
100
1
0.2
125
Figure 5. Capacitance Characteristics
1.6
10
VGS, Gate-Source Voltage [V]
10000
Capacitances [pF]
2. 250μs Pulse Test
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
50000
Ciss
1000
100
o
25 C
*Notes:
1. VGS = 0V
o
0.04
9
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.24
RDS(ON) [Ω],
Drain-Source On-Resistance
4
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
100
VDS, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
Coss
Crss
8
6
4
2
0
600
3
VDS = 100V
VDS = 250V
VDS = 400V
*Note: ID = 35A
0
40
80
120
Qg, Total Gate Charge [nC]
160
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 8. On-Resistance Variation
vs. Temperature
1.15
3.0
1.10
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
0.85
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
*Notes:
1. VGS = 10V
2. ID = 17.5A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
300
40
10μs
100
ID, Drain Current [A]
ID, Drain Current [A]
100μs
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
0.1
o
30
20
10
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
0.6
0.5
0.1
0.2
0.1
PDM
0.05
t1
0.02
0.01
0.01
t2
*Notes:
Single pulse
o
0.001
-5
10
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
1. ZθJC(t) = 0.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
5
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
6
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
Mechanical Dimensions
TO-247
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
8
www.fairchildsemi.com
FCH35N60 N-Channel MOSFET
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