FCH35N60 N-Channel SuperFET® MOSFET 600 V, 35 A, 98 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • 100% Avalanche Tested Application • Solar Inverter • AC-DC Power Supply D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate-Soure voltage FCH35N60 600 Unit V ±30 V -Continuous (TC = 25oC) 35 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 35 A EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns -Continuous (TC = 100oC) - Pulsed 105 A (Note 2) 1455 mJ (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) (TC = 25oC) PD A 22.2 - Derate above 25oC 312.5 W 2.5 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case-to-Heat Sink RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 1 Typ. Max. - 0.4 0.24 - - 42 Unit o C/W www.fairchildsemi.com FCH35N60 N-Channel MOSFET March 2013 Device Marking FCH35N60 Device FCH35N60 Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V ID = 250 μA, VGS = 0 V, TJ = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 16 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 17.5 A - 0.079 0.098 Ω gFS Forward Transconductance VDS = 40 V, ID = 17.5 A - 28.8 - S VDS = 25 V, VGS = 0 V f = 1 MHz - 4990 6640 pF - 2380 3170 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 140 - Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 113 - pF Coss eff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 340 - pF Qg Total Gate Charge at 10V - 139 181 nC Qgs Gate to Source Gate Charge VDS = 480 V, ID = 35 A VGS = 10 V - 31 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) - 69 - nC Drain Open, F= 1 MHZ - 1.4 - Ω - 34 78 ns VDD = 300 V, ID = 35 A RG = 4.7 Ω - 120 250 ns - 105 220 ns - 73 155 ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 35 A - - 1.4 V trr Reverse Recovery Time - 614 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 35 A dIF/dt = 100 A/μs - 16.3 - μC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: IAS = 17.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C 3: ISD ≤ 35 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 2 www.fairchildsemi.com FCH35N60 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FCH35N60 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 200 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.3 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.20 0.16 0.12 VGS = 10V VGS = 20V 0.08 100 o 150 C 10 *Note: TC = 25 C 0 25 50 75 ID, Drain Current [A] 100 1 0.2 125 Figure 5. Capacitance Characteristics 1.6 10 VGS, Gate-Source Voltage [V] 10000 Capacitances [pF] 2. 250μs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 50000 Ciss 1000 100 o 25 C *Notes: 1. VGS = 0V o 0.04 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.24 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 Coss Crss 8 6 4 2 0 600 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 35A 0 40 80 120 Qg, Total Gate Charge [nC] 160 www.fairchildsemi.com FCH35N60 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 8. On-Resistance Variation vs. Temperature 1.15 3.0 1.10 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 17.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 40 10μs 100 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 30 20 10 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 0.6 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 0.01 t2 *Notes: Single pulse o 0.001 -5 10 ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FCH35N60 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 5 www.fairchildsemi.com FCH35N60 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 6 www.fairchildsemi.com FCH35N60 N-Channel MOSFET Mechanical Dimensions TO-247 Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FCH35N60 Rev. C0 8 www.fairchildsemi.com FCH35N60 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ QFET® CorePLUS™ Green FPS™ TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™