AP5602P
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
55V
RDS(ON)
8mΩ
ID
100A
S
Description
AP4604 series are from Advanced Power innovated design
AP5602
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial
The
TO-220
through
packagehole
is widely
applications.
preferred The
for alllow
commercialthermal
resistance and
industrial
through
low package
hole applications.
cost contribute
The
to the
lowworldwide
thermal
popular package.
resistance
and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
55
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
100
A
ID@TC=100℃
Drain Current, VGS @ 10V
70
A
400
A
187.5
W
2.41
W
269
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201602171
AP5602P
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
55
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=62A
-
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=62A
-
105
-
S
IDSS
Drain-Source Leakage Current
VDS=44V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=62A
-
97
155
nC
Qgs
Gate-Source Charge
VDS=44V
-
27
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
46
-
nC
td(on)
Turn-on Delay Time
VDS=28V
-
20
-
ns
tr
Rise Time
ID=62A
-
125
-
ns
td(off)
Turn-off Delay Time
RG=1.5Ω
-
35
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
3900 6240
pF
Coss
Output Capacitance
VDS=25V
-
600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
365
-
pF
Rg
Gate Resistance
-
1
2
Ω
Min.
Typ.
IS=62A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=62A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=30V , L=0.14mH , R G=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP5602P
400
200
10V
9.0V
8.0V
ID , Drain Current (A)
o
T C =175 C
10V
9.0V
8.0V
7.0V
160
ID , Drain Current (A)
o
T C = 25 C
300
7.0V
200
V G =6.0V
6.0V
120
80
V G =5.0V
100
40
0
0
0
4
8
12
16
20
0
Fig 1. Typical Output Characteristics
8
12
16
Fig 2. Typical Output Characteristics
2.4
10
I D =62A
I D =62A
V G =10V
T C =25 o C
2.0
8
7
.
6
Normalized RDS(ON)
9
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
5
0.4
4
5
6
7
8
9
-100
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =1mA
1.6
o
T j =175 C
T j =25 C
IS(A)
10
Normalized VGS(th)
o
1.2
0.8
1
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP5602P
f=1.0MHz
8000
I D =62A
V DS =44V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
4000
4
2000
2
C oss
C rss
0
0
0
40
80
120
1
160
21
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
61
81
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100us
10
.
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
100
ID (A)
41
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
200
V DS =5V
100
ID , Drain Current (A)
ID , Drain Current (A)
160
80
60
40
120
80
T j =175 o C
T j =25 o C
40
20
o
T j = -55 C
0
0
25
75
125
T C , Case Temperature (
175
o
C)
Fig 11. Drain Current v.s. Case
Temperature
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP5602P
32
200
T j =25 o C
PD, Power Dissipation(W)
160
RDS(ON) (mΩ)
24
16
8
120
80
40
V GS =10V
0
0
0
40
80
120
160
0
200
50
100
150
200
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
0
T
j
50
100
150
200
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
AP5602P
MARKING INFORMATION
Part Number
5602
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6