MRF338 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF338 is Designed for High Power Amplifiers in 400 to 512 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • PG = 8.8 dB Typical at 470 MHz • Internal Input Matching Network • Omnigold™ Metalization System D B H 12 A VCBO 60 V VCEO 30 V VEBO 250 W @ TC = 25 °C inche s / m m inche s / m m A .160 / 4.06 M AX IM U M .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M TSTG -65 °C to +150 °C θJC 0.7 °C/W CHARACTERISTICS .120 / 3.05 N .135 / 3.43 O TC = 25 C NONETEST CONDITIONS SYMBOL L M IN IM U M I -65 °C to +200 °C TJ I .150 / 3.43 B 4.0 V J D IM H PDISS M K MAXIMUM RATINGS IC E .725/18,42 F G MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 50 mA 30 V BVEBO IE = 8.0 mA 4.0 V ICBO VCE = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηD VCC = 28 V IC = 4.0 A 20 f = 1.0 MHz POUT = 80 W f = 470 MHz 95 7.3 50 8.8 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 80 --- 125 pF dB % REV. A 1/1