ETL MUN5334DW1T1 Dual bias resistor transistor Datasheet

Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
MUN5311DW1T1
Series
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T A = 25°C unless otherwise noted, common for Q 1
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
6
5
4
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
Symbol Value
V CBO
50
V CEO
50
IC
100
Symbol
PD
R θJA
Q1
R1
Symbol
PD
R θJA
Junction and Storage
Temperature
T J , T stg
R θJL
Max
187 (Note 1.)
Unit
mW
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW/°C
670 (Note 1.)
490 (Note 2.)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
R2
R2
1
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
1. FR–4 @ Minimum Pad
R1
Q2
Unit
Vdc
Vdc
mAdc
°C/W
3
2
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
= (See Page 2)
Unit
mW
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
mW/°C
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
°C/W
–55 to +150
°C
this data sheet.
°C/W
2. FR–4 @ 1.0 x 1.0 inch Pad
MUN5311dw–1/13
MUN5311DW1T1
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R 1(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R 2(K)
10
22
47
47
8 8
DEVICE MARKING AND RESISTOR VALUES
Device
Package
MUN5311DW1T1
SOT–363
MUN5312DW1T1
SOT–363
MUN5313DW1T1
SOT–363
MUN5314DW1T1
SOT–363
MUN5315DW1T1 (Note 3.)
SOT–363
MUN5316DW1T1 (Note 3.)
SOT–363
MUN5330DW1T1 (Note 3.)
SOT–363
MUN5331DW1T1 (Note 3.)
SOT–363
MUN5332DW1T1 (Note 3.)
SOT–363
MUN5333DW1T1 (Note 3.)
SOT–363
MUN5334DW1T1 (Note 3.)
SOT–363
MUN5335DW1T1 (Note 3.)
SOT–363
1.0
2.2
4.7
47
47
47
Series
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = 50 V, I E = 0)
I CBO
–
–
100
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)
I CEO
–
–
500
I
–
–
0.5
EBO
Emitter-Base Cutoff Current
MUN5311DW1T1
–
–
0.2
(V EB = 6.0 V, I C = 0)
MUN5312DW1T1
–
–
0.1
MUN5313DW1T1
–
–
0.2
MUN5314DW1T1
–
–
0.9
MUN5315DW1T1
–
–
1.9
MUN5316DW1T1
–
–
4.3
MUN5330DW1T1
–
–
2.3
MUN5331DW1T1
–
–
1.5
MUN5332DW1T1
–
–
0.18
MUN5333DW1T1
–
–
0.13
MUN5334DW1T1
–
–
0.2
MUN5335DW1T1
Collector-Base Breakdown Voltage (I C =10 µA, I E = 0)
V (BR)CBO
50
–
–
Collector-Emitter Breakdown Voltage(Note 4.)(IC =2.0 mA,I B=0) V (BR)CEO
50
–
–
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
MUN5311dw–2/13
MUN5311DW1T1
Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 5.)
35
60
–
DC Current Gain
MUN5311DW1T1
h FE
60
100
–
(V CE = 10 V, I C = 5.0 mA)
MUN5312DW1T1
80
140
–
MUN5313DW1T1
80
140
–
MUN5314DW1T1
160
350
–
MUN5315DW1T1
160
350
–
MUN5316DW1T1
3.0
5.0
–
MUN5330DW1T1
8.0
15
–
MUN5331DW1T1
15
30
–
MUN5332DW1T1
80
200
–
MUN5333DW1T1
80
150
–
MUN5334DW1T1
80
140
–
MUN5335DW1T1
V CE(sat)
–
–
0.25
Vdc
Collector-Emitter Saturation Voltage
(I C = 10 mA, I B = 0.3 mA)
(I C = 10 mA, I B = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I C = 10 mA, I B = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(V CC= 5.0V, VB = 2.5V,R L= 1.0 kΩ) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V CC=5.0V,VB=3.5 V, RL=1.0kΩ)
MUN5313DW1T1
Vdc
V OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
MUN5311dw–3/13
MUN5311DW1T1
Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 5.)
Output Voltage (off)
(VCC =5.0V, VB=0.5V, RL=1.0kΩ)
(VCC=5.0V, VB=0.050V, RL=1.0kΩ) MUN5330DW1T1
(VCC=5.0V, VB=0.25V, RL=1.0kΩ) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
V OH
4.9
–
Input Resistor
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
0.8
0.17
–
0.8
0.055
0.38
0.038
1.0
0.21
–
1.0
0.1
0.47
0.047
1.2
0.25
–
1.2
0.185
0.56
0.056
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Resistor Ratio
R 1/ R 2
MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
–
Vdc
kΩ
P D , POWER DISSIPATION (mW)
300
250
200
150
100
50
0
–50
0
50
100
150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5311dw–4/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
Figure 3. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5311dw–5/13
MUN5311DW1T1
Series
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 PNP TRANSISTOR
100
10
1
10
I C , COLLECTOR CURRENT (mA)
100
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
MUN5311dw–6/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 NPN TRANSISTOR
100
10
1
10
I C , COLLECTOR CURRENT (mA)
100
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
MUN5311dw–7/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 PNP TRANSISTOR
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
MUN5311dw–8/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 NPN TRANSISTOR
100
10
1
10
I C , COLLECTOR CURRENT (mA)
100
I C , COLLECTOR CURRENT (mA)
Figure 22. V CE(sat) versus I C
Figure 23. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
MUN5311dw–9/13
MUN5311DW1T1
Series
1
0.1
0.01
0
10
20
30
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 27. V CE(sat) versus I C
Figure 28. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
1
0.8
0.6
0.4
0.2
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
Figure 30. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
MUN5311dw–10/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
60
80
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSISTOR
250
200
150
100
50
0
1
2
4
6
I C , COLLECTOR CURRENT (mA)
8
10
15
20
40
50
60
70
80 90
100
I C , COLLECTOR CURRENT (mA)
Figure 32. V CE(sat) versus I C
Figure 33. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
0
10
1
0
2
4
6
8
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 34. Output Capacitance
Figure 35. Output Current versus Input oltage
10
10
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
300
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
MUN5311dw–11/13
MUN5311DW1T1
Series
1
0.1
0.01
0.001
0
20
40
60
80
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR
160
140
120
100
80
60
40
20
0
1
2
4
6
8
10
15
20
40 50
60
70
80
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 37. V CE(sat) versus I C
Figure 38. DC Current Gain
4.5
90 100
I C , COLLECTOR CURRENT (mA)
100
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
10
1
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 39. Output Capacitance
Figure 40. Output Current versus Input oltage
10
10
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
180
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
MUN5311dw–12/13
MUN5311DW1T1
Series
1000
100
1.0
10
100
h FE , DC CURRENT GAIN (NORMALIZED)
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5315DW1T1
1000
100
1.0
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 42. DC Current Gain–PNP
Figure 43. DC Current Gain–NPN
1000
100
1.0
10
100
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5316DW1T1
1000
100
1.0
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 44. DC Current Gain–PNP
Figure 45. DC Current Gain–NPN
MUN5311dw–13/13
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