LINER LTC2231IUP Electrical specifications subject to change Datasheet

Electrical Specifications Subject to Change
LTC2230/LTC2231
10-Bit,170Msps/
135Msps ADCs
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FEATURES
DESCRIPTIO
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The LTC®2230 and LTC2231 are 170Msps/135Msps, sampling 10-bit A/D converters designed for digitizing high
frequency, wide dynamic range signals. The LTC2230/
LTC2231 are perfect for demanding communications
applications with AC performance that includes 61dB SNR
and 75dB spurious free dynamic range for signals
up to 200MHz. Ultralow jitter of 0.15psRMS allows
undersampling of IF frequencies with excellent noise
performance.
■
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■
■
■
■
■
■
■
■
■
■
Sample Rate: 170Msps/135 Msps
61dB SNR up to 140MHz Input
75dB SFDR up to 200MHz Input
775MHz Full Power Bandwidth S/H
Single 3.3V Supply
Low Power Dissipation: 890mW/660mW
LVDS, CMOS, or Demultiplexed CMOS Outputs
Selectable Input Ranges: ±0.5V or ±1V
No Missing Codes
Optional Clock Duty Cycle Stabilizer
Shutdown and Nap Modes
Data Ready Output Clock
Pin Compatible Family
170Msps: LTC2220 (12-Bit), LTC2230 (10-Bit)
135Msps: LTC2221 (12-Bit), LTC2231 (10-Bit)
64-Pin 9mm x 9mmQFN Package
DC specs include ±0.2LSB INL (typ), ±0.1LSB DNL (typ)
and no missing codes over temperature. The transition
noise is a low 0.12LSBRMS.
The digital outputs can be either differential LVDS, or
single-ended CMOS. There are three format options for
the CMOS outputs: a single bus running at the full data rate
or two demultiplexed buses running at half data rate with
either interleaved or simultaneous update. A separate
output power supply allows the CMOS output swing to
range from 0.5V to 3.3V.
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APPLICATIO S
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Wireless and Wired Broadband Communication
Cable Head-End Systems
Power Amplifier Linearization
Communications Test Equipment
The ENC+ and ENC – inputs may be driven differentially or
single ended with a sine wave, PECL, LVDS, TTL, or CMOS
inputs. An optional clock duty cycle stabilizer allows high
performance at full speed for a wide range of clock duty
cycles.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
3.3V
VDD
REFH
REFL
SFDR vs Input Frequency
90
0.5V
TO 3.3V
FLEXIBLE
REFERENCE
85
4th OR HIGHER
80
OVDD
ANALOG
INPUT
INPUT
S/H
–
10-BIT
PIPELINED
ADC CORE
CORRECTION
LOGIC
D9
•
•
•
D0
OUTPUT
DRIVERS
75
CMOS
OR
LVDS
SFDR (dBFS)
+
70
2nd OR 3rd
65
60
55
OGND
50
45
CLOCK/DUTY
CYCLE
CONTROL
40
0
100
300
500
200
400
INPUT FREQUENCY (MHz)
600
22301 TA01
2230 TA01b
ENCODE INPUT
22301p
1
LTC2230/LTC2231
U
W W
W
ABSOLUTE
AXI U RATI GS
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W
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PACKAGE/ORDER I FOR ATIO
OVDD = VDD (Notes 1, 2)
TOP VIEW
64 GND
63 VDD
62 VDD
61 GND
60 VCM
59 SENSE
58 MODE
57 LVDS
56 OF +/OFA
55 OF –/DA9
54 D9+/DA8
53 D9–/DA7
52 D8+/DA6
51 D8–/DA5
50 OGND
49 OVDD
Supply Voltage (VDD) ................................................. 4V
Digital Output Ground Voltage (OGND) ....... –0.3V to 1V
Analog Input Voltage (Note 3) ..... –0.3V to (VDD + 0.3V)
Digital Input Voltage .................... –0.3V to (VDD + 0.3V)
Digital Output Voltage ............... –0.3V to (OVDD + 0.3V)
Power Dissipation ............................................ 1500mW
Operating Temperature Range
LTC2230C, LTC2231C ............................. 0°C to 70°C
LTC2230I, LTC2231I ...........................–40°C to 85°C
Storage Temperature Range ..................–65°C to 125°C
AIN+ 1
AIN+ 2
AIN– 3
AIN– 4
REFHA 5
REFHA 6
REFLB 7
REFLB 8
REFHB 9
REFHB 10
REFLA 11
REFLA 12
VDD 13
VDD 14
VDD 15
GND 16
48 D7+/DA4
47 D7–/DA3
46 D6+/DA2
45 D6–/DA1
44 D5+/DA0
43 D5–/DNC
42 OVDD
41 OGND
40 D4+/DNC
39 D4–/CLOCKOUTA
38 D3+/CLOCKOUTB
37 D3–/OFB
36 CLOCKOUT +/DB9
35 CLOCKOUT –/DB8
34 OVDD
33 OGND
ENC + 17
ENC – 18
SHDN 19
OE 20
DNC 21
DNC 22
DNC/DB0 23
DNC/DB1 24
OGND 25
OVDD 26
D0–/DB2 27
D0+/DB3 28
D1–/DB4 29
D1+/DB5 30
D2–/DB6 31
D2+/DB7 32
65
UP PACKAGE
64-LEAD (9mm × 9mm) PLASTIC QFN
EXPOSED PAD IS GND (PIN 65),
MUST BE SOLDERED TO PCB
TJMAX = 125°C, θJA = 20°C/W
ORDER PART
NUMBER
LTC2230CUP
LTC2230IUP
LTC2231CUP
LTC2231IUP
UP PART
MARKING
2230
2230
2231
2231
Consult LTC Marketing for parts specified with wider operating temperature ranges.
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CO VERTER CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 4)
PARAMETER
CONDITIONS
Resolution (No Missing Codes)
MIN
●
10
TYP
MAX
UNITS
Bits
Integral Linearity Error
Differential Analog Input
●
–0.8
±0.2
0.8
LSB
Differential Linearity Error
Differential Analog Input
●
–0.6
±0.1
0.6
LSB
Integral Linearity Error
Single-Ended Analog Input
±0.5
LSB
Differential Linearity Error
Single-Ended Analog Input
±0.1
LSB
Offset Error
Gain Error
External Reference
Offset Drift
●
–20
±3
20
mV
●
–3
±0.5
3
%FS
±10
µV/C
Full-Scale Drift
Internal Reference
External Reference
±30
±15
ppm/C
ppm/C
Transition Noise
SENSE = 1V
0.12
LSBRMS
22301p
2
LTC2230/LTC2231
U
U
A ALOG I PUT
The ● denotes the specifications which apply over the full operating temperature range, otherwise
specifications are at TA = 25°C. (Note 9)
SYMBOL
PARAMETER
CONDITIONS
VIN
Analog Input Range (AIN+ – AIN–)
3.1V < VDD < 3.5V
●
VIN, CM
Analog Input Common Mode
Differential Input
●
1
IIN
Analog Input Leakage Current
0 < AIN+, AIN–
●
ISENSE
SENSE Input Leakage
0V < SENSE < 1V
●
IMODE
MODE Pin Pull-Down Current to GND
10
µA
ILVDS
LVDS Pin Pull-Down Current to GND
10
µA
tAP
Sample and Hold Acquisition Delay Time
0
ns
tJITTER
Sample and Hold Acquisition Delay Time Jitter
CMRR
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DY A IC ACCURACY
SNR
Signal-to-Noise Ratio (Note 10)
5MHz Input (1V Range)
5MHz Input (2V Range)
70MHz Input (1V Range)
70MHz Input (2V Range)
V
–1
1
µA
–1
1
µA
Spurious Free Dynamic Range
2nd or 3rd Harmonic (Note 11)
Spurious Free Dynamic Range
4th Harmonic or Higher (Note 11)
80
dB
775
MHz
MIN
LTC2230
TYP
MAX
MIN
59.5
61.2
60
59.5
61.1
60
LTC2231
TYP
MAX
UNITS
59.5
61.2
dB
dB
59.5
61.1
dB
dB
59.4
61.0
59.4
61.0
dB
dB
250MHz Input (1V Range)
250MHz Input (2V Range)
59.0
60.6
59.0
60.6
dB
dB
80
78
80
78
dB
dB
80
78
dB
dB
5MHz Input (1V Range)
5MHz Input (2V Range)
70
80
78
70
140MHz Input (1V Range)
140MHz Input (2V Range)
78
78
78
78
dB
db
250MHz Input (1V Range)
250MHz Input (2V Range)
75
74
78
78
dB
dB
5MHz Input (1V Range)
5MHz Input (2V Range)
86
86
86
86
dB
dB
86
86
dB
dB
70MHz Input (1V Range)
70MHz Input (2V Range)
75
86
86
75
140MHz Input (1V Range)
140MHz Input (2V Range)
86
86
86
86
dB
dB
250MHz Input (1V Range)
250MHz Input (2V Range)
85
85
85
85
dB
dB
59.5
61.2
59.5
61.2
dB
dB
59.5
61.1
dB
dB
81
dBc
5MHz Input (1V Range)
5MHz Input (2V Range)
70MHz Input (1V Range)
70MHz Input (2V Range)
Intermodulation Distortion
psRMS
140MHz Input (1V Range)
140MHz Input (2V Range)
70MHz Input (1V Range)
70MHz Input (2V Range)
IMD
V
TA = 25°C. AIN = –1dBFS. (Note 4)
CONDITIONS
Signal-to-Noise
Plus Distortion Ratio (Note 12)
1.6
UNITS
1.9
Figure 8 Test Circuit
PARAMETER
S/(N+D)
MAX
0.15
SYMBOL
SFDR
< VDD
TYP
±0.5 to ±1
Analog Input Common Mode Rejection Ratio
Full Power Bandwidth
SFDR
MIN
fIN1 = 138MHz,
fIN2 = 140MHz
60
59.5
61.1
81
60
22301p
3
LTC2230/LTC2231
U U
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I TER AL REFERE CE CHARACTERISTICS
(Note 4)
PARAMETER
CONDITIONS
MIN
TYP
MAX
VCM Output Voltage
IOUT = 0
1.575
1.600
1.625
VCM Output Tempco
UNITS
V
±25
ppm/C
VCM Line Regulation
3.1V < VDD < 3.5V
3
mV/V
VCM Output Resistance
–1mA < IOUT < 1mA
4
Ω
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DIGITAL I PUTS A D DIGITAL OUTPUTS
The ● denotes the specifications which apply over the
full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
2.5
V
V
ENCODE INPUTS (ENC +, ENC –)
VID
Differential Input Voltage
VICM
Common Mode Input Voltage
RIN
Input Resistance
CIN
Input Capacitance
●
Internally Set
Externally Set (Note 7)
●
0.2
1.1
(Note 7)
V
1.6
1.6
6
kΩ
3
pF
LOGIC INPUTS (OE, SHDN)
VIH
High Level Input Voltage
VDD = 3.3V
●
VIL
Low Level Input Voltage
VDD = 3.3V
●
IIN
Input Current
VIN = 0V to VDD
●
CIN
Input Capacitance
(Note 7)
2
V
–10
0.8
V
10
µA
3
pF
LOGIC OUTPUTS (CMOS MODE)
OVDD = 3.3V
COZ
Hi-Z Output Capacitance
OE = High (Note 7)
3
pF
ISOURCE
Output Source Current
VOUT = 0V
50
mA
ISINK
Output Sink Current
VOUT = 3.3V
50
mA
VOH
High Level Output Voltage
IO = –10µA
IO = –200µA
●
IO = 10µA
IO = 1.6mA
●
VOL
Low Level Output Voltage
3.1
3.295
3.29
0.005
0.09
V
V
0.4
V
V
OVDD = 2.5V
VOH
High Level Output Voltage
IO = –200µA
2.49
V
VOL
Low Level Output Voltage
IO = 1.6mA
0.09
V
VOH
High Level Output Voltage
IO = –200µA
1.79
V
VOL
Low Level Output Voltage
IO = 1.6mA
0.09
V
OVDD = 1.8V
LOGIC OUTPUTS (LVDS MODE)
VOD
Differential Output Voltage
100Ω Differential Load
●
247
350
454
VOS
Output Common Mode Voltage
100Ω Differential Load
●
1.125
1.250
1.375
mV
V
22301p
4
LTC2230/LTC2231
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POWER REQUIRE E TS
The ● denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. (Note 9)
CONDITIONS
MIN
LTC2230
TYP
MAX
PARAMETER
VDD
Analog Supply Voltage
PSHDN
Shutdown Power
SHDN = H, OE = H, No CLK
2
2
mW
PNAP
Nap Mode Power
SHDN = H, OE = L, No CLK
35
35
mW
●
3.1
3.3
3.5
MIN
LTC2231
TYP
MAX
SYMBOL
3.1
3.3
UNITS
3.5
V
LVDS OUTPUT MODE
OVDD
Output Supply Voltage
●
IVDD
Analog Supply Current
●
IOVDD
Output Supply Current
●
55
61
55
61
mA
PDISS
Power Dissipation
●
1050
1160
828
915
mW
3
3.3
3.6
264
290
3
3.3
3.6
V
196
216
mA
CMOS OUTPUT MODE
OVDD
Output Supply Voltage
●
IVDD
Analog Supply Current
●
PDISS
Power Dissipation
0.5
3.3
3.6
264
290
0.5
890
3.3
3.6
V
196
216
mA
660
mW
WU
TI I G CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. (Note 4)
SYMBOL
PARAMETER
fS
Sampling Frequency
tL
ENC Low Time
tH
ENC High Time
tAP
Sample-and-Hold Aperture Delay
tOE
Output Enable Delay
CONDITIONS
MIN
●
1
Duty Cycle Stabilizer Off
Duty Cycle Stabilizer On
●
●
2.8
2
Duty Cycle Stabilizer Off
Duty Cycle Stabilizer On
●
●
2.8
2
(Note 7)
●
LTC2230
TYP
MAX
MIN
LTC2231
TYP
MAX
UNITS
135
MHz
170
1
2.94
2.94
500
500
3.5
2
3.7
3.7
500
500
ns
ns
2.94
2.94
500
500
3.5
2
3.7
3.7
500
500
ns
ns
0
0
5
10
ns
5
10
ns
LVDS OUTPUT MODE
tD
ENC to DATA Delay
(Note 7)
●
1.3
2.2
3.5
1.3
2.2
3.5
ns
tC
ENC to CLOCKOUT Delay
(Note 7)
●
1.3
2.2
3.5
1.3
2.2
3.5
ns
DATA to CLOCKOUT Skew
(tC - tD) (Note 7)
●
–0.6
0
0.6
–0.6
0
0.6
ns
Rise Time
0.5
0.5
ns
Fall Time
0.5
0.5
ns
5
5
Pipeline Latency
Cycles
CMOS OUTPUT MODE
tD
ENC to DATA Delay
(Note 7)
●
1.3
2.1
3.5
1.3
2.1
3.5
ns
tC
ENC to CLOCKOUT Delay
(Note 7)
●
1.3
2.1
3.5
1.3
2.1
3.5
ns
DATA to CLOCKOUT Skew
(tC - tD) (Note 7)
●
–0.6
0
0.6
–0.6
0
0.6
Pipeline Latency Full Rate CMOS
Demuxed Interleaved
Demuxed Simultaneous
ns
5
5
Cycles
5
5
Cycles
5 and 6
5 and 6
Cycles
22301p
5
LTC2230/LTC2231
ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which the life of
a device may be impaired.
Note 2: All voltage values are with respect to ground with GND and OGND
wired together (unless otherwise noted).
Note 3: When these pin voltages are taken below GND or above VDD, they will
be clamped by internal diodes. This product can handle input currents of
greater than 100mA below GND or above VDD without latchup.
Note 4: VDD = 3.3V, fSAMPLE = 170MHz (LTC2230) or 135MHz (LTC2231),
LVDS outputs differential, ENC+/ENC– = 2VP-P sine wave, input range =
2VP-P with differential drive, unless otherwise noted.
Note 5: Integral nonlinearity is defined as the deviation of a code from a
straight line passing through the actual endpoints of the transfer curve. The
deviation is measured from the center of the quantization band.
Note 6: Offset error is the offset voltage measured from –0.5 LSB when the
output code flickers between 00 0000 0000 and 11 1111 1111 in 2’s
complement output mode.
Note 7: Guaranteed by design, not subject to test.
Note 8: Recommended operating conditions.
Note 9: VDD = 3.3V, fSAMPLE = 170MHz (LTC2230) or 135MHz (LTC2231),
differential ENC+/ENC– = 2VP-P sine wave, input range = 1VP-P with differential
drive, output CLOAD = 5pF.
Note 10: SNR minimum and typical values are for LVDS mode. Typical values
for CMOS mode are typically 0.7dB to 0.9dB lower.
Note 11: SFDR minimum values are for LVDS mode. Typical values are for
both LVDS and CMOS modes.
Note 12: SINAD minimum and typical values are for LVDS mode. Typical
values for CMOS mode are typically 0.5dB to 0.9dB lower.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2230: DNL, 2V Range
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0
– 0.2
100000
0
– 0.2
– 0.4
– 0.6
– 0.6
– 0.8
– 0.8
80000
60000
40000
20000
– 1.0
256
0
512
OUTPUT CODE
768
512
OUTPUT CODE
768
2230 G01
7
6
0
256
0
1024
131059
120000
0.2
– 0.4
– 1.0
LTC2230: Noise Histogram
140000
COUNT
ERROR (LSB)
ERROR (LSB)
LTC2230: INL, 2V Range
1.0
1024
513
514
515
CODE
2230 G02
LTC2230: SNR
vs Input Frequency, –1dB,
2V Range
2230 G23
LTC2230: SNR
vs Input Frequency, –1dB,
1V Range
63
63
62
62
61
61
LTC2230: SFDR (HD2 and HD3)
vs Input Frequency, –1dB,
2V Range
90
60
80
75
SFDR (dBFS)
SNR (dBFS)
SNR (dBFS)
85
60
59
59
58
58
57
57
70
65
60
55
50
45
0
100
300
400
500
200
INPUT FREQUENCY (MHz)
600
2230 G03
0
100
300
400
500
200
INPUT FREQUENCY (MHz)
600
2230 G04
40
0
100
300
500
200
400
INPUT FREQUENCY (MHz)
600
2230 G05
22301p
6
LTC2230/LTC2231
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2230: SFDR (HD4+) vs Input
Frequency, –1dB, 2V Range
90
85
85
80
80
80
75
75
75
70
65
60
SFDR (dBFS)
90
85
70
65
60
70
65
60
55
55
55
50
50
50
45
45
45
40
40
100
300
500
200
400
600
INPUT FREQUENCY (MHz)
2230 G06
85
SFDR AND SNR (dBFS)
SFDR
75
70
65
SNR
60
55
100
40
300
500
200
400
600
INPUT FREQUENCY (MHz)
2230 G07
LTC2230: SFDR and SNR
vs Sample Rate, 1V Range,
fIN = 30MHz, –1dB
90
80
0
90
290
85
280
SFDR
80
70
65
SNR
2V RANGE
250
1V RANGE
240
210
0 20 40 60 80 100 120 140 160 180 200
SAMPLE RATE (Msps)
2230 G10
0
20 40 60 80 100 120 140 160 180 200
SAMPLE RATE (Msps)
2230 G11
LTC2230: SFDR vs Input Level,
f IN = 70MHz, 2V Range
LTC2230: IOVDD vs Sample Rate,
5MHz Sine Wave Input, –1dB
60
100
90
LVDS OUTPUTS, 0VDD = 3.3V
50
dBFS
SFDR (dBc AND dBFS)
80
40
IOVDD (mA)
260
220
50
0 20 40 60 80 100 120 140 160 180 200
SAMPLE RATE (Msps)
2230 G09
300
500
200
400
600
INPUT FREQUENCY (MHz)
2230 G08
230
55
50
100
270
75
60
0
LTC2230: IVDD vs Sample Rate,
5MHz Sine Wave Input, –1dB
IVDD (mA)
0
LTC2230: SFDR and SNR
vs Sample Rate, 2V Range,
fIN = 30MHz, –1dB
SFDR AND SNR (dBFS)
LTC2230: SFDR (HD4+) vs Input
Frequency, –1dB, 1V Range
90
SFDR (dBFS)
SFDR (dBFS)
LTC2230: SFDR (HD2 and HD3) vs
Input Frequency, –1dB, 1V Range
30
20
CMOS OUTPUTS, 0VDD = 1.8V
10
70
60
dBc
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180 200
SAMPLE RATE (Msps)
2230 G12
0
–50
–40
–30
–10
–20
INPUT LEVEL (dBFS)
0
2230 G13
22301p
7
LTC2230/LTC2231
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2230: 8192 Point FFT,
f IN = 30MHz, –1dB, 1V Range
LTC2230: 8192 Point FFT,
f IN = 70MHz, –1dB, 2V Range
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
–50
–60
–70
–80
AMPLITUDE (dB)
0
–10
AMPLITUDE (dB)
AMPLITUDE (dB)
LTC2230: 8192 Point FFT,
f IN = 30MHz, –1dB, 2V Range
–50
–60
–70
–80
–50
–60
–70
–80
–90
–90
–90
–100
–100
–100
–110
–110
–110
–120
–120
0
10
20
30 40 50 60
FREQUENCY (MHz)
70
80
10
20
2230 G14
LTC2230: 8192 Point FFT,
f IN = 70MHz, –1dB, 1V Range
30 40 50 60
FREQUENCY (MHz)
70
80
–120
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
–70
–80
AMPLITUDE (dB)
0
–60
–50
–60
–70
–80
–90
–100
–110
–110
–110
–120
–120
70
80
10
20
2230 G17
LTC2230: 8192 Point FFT,
f IN = 250MHz, –1dB, 2V Range
30 40 50 60
FREQUENCY (MHz)
70
80
–120
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
–70
–80
AMPLITUDE (dB)
0
–60
–50
–60
–70
–80
–90
–100
–110
–110
–110
–120
–120
70
80
2230 G20
0
10
20
30 40 50 60
FREQUENCY (MHz)
70
80
2230 G19
–80
–100
30 40 50 60
FREQUENCY (MHz)
70
–70
–100
20
30 40 50 60
FREQUENCY (MHz)
–60
–90
10
20
–50
–90
0
10
LTC2230: 8192 Point FFT,
f IN = 500MHz, –6dB, 1V Range
–10
–50
0
2230 G18
LTC2230: 8192 Point FFT,
f IN = 250MHz, –1dB, 1V Range
AMPLITUDE (dB)
AMPLITUDE (dB)
0
80
2230 G16
–80
–100
30 40 50 60
FREQUENCY (MHz)
70
–70
–100
20
30 40 50 60
FREQUENCY (MHz)
–60
–90
10
20
–50
–90
0
10
LTC2230: 8192 Point FFT,
f IN = 140MHz, –1dB, 1V Range
–10
–50
0
2230 G15
LTC2230: 8192 Point FFT,
f IN = 140MHz, –1dB, 2V Range
AMPLITUDE (dB)
AMPLITUDE (dB)
0
80
2230 G21
–120
0
10
20
30 40 50 60
FREQUENCY (MHz)
70
80
2230 G22
22301p
8
LTC2230/LTC2231
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2231: DNL, 2V Range
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0
– 0.2
140000
100000
0
–0.2
–0.4
– 0.6
–0.6
– 0.8
–0.8
512
OUTPUT CODE
768
20000
512
OUTPUT CODE
768
513
1024
2231 G23
LTC2231: SFDR (HD2 and HD3) vs
Input Frequency, –1dB, 2V Range
90
64
85
63
63
62
62
61
60
59
58
58
57
57
56
56
55
0
100
500
200
300
400
INPUT FREQUENCY (MHz)
55
600
80
SFDR (dBFS)
SNR (dBFS)
65
64
59
75
70
65
60
55
0
100
500
200
300
400
INPUT FREQUENCY (MHz)
2231 G03
50
600
LTC2231: SFDR (HD4+) vs Input
Frequency, –1dB, 2V Range
85
85
80
80
80
75
75
75
SFDR (dBFS)
85
SFDR (dBFS)
90
70
65
65
60
60
55
55
55
100
200
300
400
500
INPUT FREQUENCY (MHz)
600
2231 G06
50
0
100
200
300
400
500
INPUT FREQUENCY (MHz)
600
70
60
0
200
300
400
500
INPUT FREQUENCY (MHz)
LTC2231: SFDR (HD4+) vs Input
Frequency, –1dB, 1V Range
90
50
100
2231 G05
90
65
0
2231 G04
LTC2231: SFDR (HD2 and HD3) vs
Input Frequency, –1dB, 1V Range
70
515
CODE
65
60
514
2231 G02
LTC2231: SNR vs Input
Frequency, –1dB, 1V Range
61
3
5
0
256
0
1024
LTC2231: SNR vs Input
Frequency, –1dB, 2V Range
SNR (dBFS)
60000
40000
2231 G01
SFDR (dBFS)
80000
–1.0
256
0
131064
120000
0.2
– 0.4
– 1.0
LTC2231: Noise Histogram
COUNT
ERROR (LSB)
ERROR (LSB)
LTC2231: INL, 2V Range
600
2231 G07
50
0
100
200
300
400
500
INPUT FREQUENCY (MHz)
600
2231 G08
22301p
9
LTC2230/LTC2231
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2231: SFDR and SNR
vs Sample Rate, 2V Range,
fIN = 30MHz, –1dB
LTC2231: SFDR and SNR
vs Sample Rate, 1V Range,
fIN = 30MHz, –1dB
85
85
SFDR
220
SFDR
80
75
70
65
SNR
60
55
210
75
200
IVDD (mA)
SFDR AND SNR (dBFS)
80
SFDR AND SNR (dBFS)
LTC2231: IVDD vs Sample Rate,
5MHz Sine Wave Input, –1dB
70
65
SNR
60
160
50
0
20
40 60 80 100 120 140 160
SAMPLE RATE (Msps)
150
0
20
40 60 80 100 120 140 160
SAMPLE RATE (Msps)
2231 G09
0
20
40
60 80 100 120 140 160 180
SAMPLE RATE (Msps)
2231 G10
2231 G11
LTC2231: SFDR vs Input Level,
f IN = 70MHz, 2V Range
LTC2231: IOVDD vs Sample Rate,
5MHz Sine Wave Input, –1dB
100
60
90
LVDS OUTPUTS, OVDD = 3.3V
50
dBFS
SFDR (dBc AND dBFS)
80
40
IOVDD (mA)
1V RANGE
180
170
55
50
2V RANGE
190
30
20
CMOS OUTPUTS, OVDD = 1.8V
10
70
60
dBc
50
40
30
20
10
0
0
20
40
60 80 100 120 140 160 180
SAMPLE RATE (Msps)
2231 G12
0
–50
–40
–30
–10
–20
INPUT LEVEL (dBFS)
0
2231 G13
22301p
10
LTC2230/LTC2231
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LTC2231: 8192 Point FFT,
f IN = 30MHz, –1dB, 1V Range
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
–50
–60
–70
–80
–50
–60
–70
–80
–50
–60
–70
–80
–90
–90
–90
–100
–100
–100
–110
–110
–110
–120
–120
–120
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
2231 G14
2231 G15
LTC2231: 8192 Point FFT,
f IN = 140MHz, –1dB, 2V Range
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
–60
–70
–80
AMPLITUDE (dB)
0
–50
2231 G16
LTC2231: 8192 Point FFT,
f IN = 140MHz, –1dB, 1V Range
–10
AMPLITUDE (dB)
–50
–60
–70
–80
–50
–60
–70
–80
–90
–90
–90
–100
–100
–100
–110
–110
–110
–120
–120
–120
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
2231 G17
LTC2231: 8192 Point FFT,
f IN = 250MHz, –1dB, 2V Range
2231 G18
LTC2231: 8192 Point FFT,
f IN = 250MHz, –1dB, 1V Range
0
0
–10
–10
–20
–20
–20
–30
–30
–30
–40
–40
–40
AMPLITUDE (dB)
0
–10
–50
–60
–70
–80
2231 G19
LTC2231: 8192 Point FFT,
f IN = 500MHz, –6dB, 1V Range
AMPLITUDE (dB)
AMPLITUDE (dB)
AMPLITUDE (dB)
0
LTC2231: 8192 Point FFT,
f IN = 70MHz, –1dB, 1V Range
AMPLITUDE (dB)
LTC2231: 8192 Point FFT,
f IN = 70MHz, –1dB, 2V Range
–10
AMPLITUDE (dB)
AMPLITUDE (dB)
LTC2231: 8192 Point FFT,
f IN = 30MHz, –1dB, 2V Range
–50
–60
–70
–80
–50
–60
–70
–80
–90
–90
–90
–100
–100
–100
–110
–110
–110
–120
–120
–120
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0 5 10 15 20 25 30 35 40 45 50 55 60 65
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
2231 G20
2231 G21
2231 G22
22301p
11
LTC2230/LTC2231
U
U
U
PI FU CTIO S
(CMOS Mode)
AIN+ (Pins 1, 2): Positive Differential Analog Input.
AIN – (Pins 3, 4): Negative Differential Analog Input.
DB0 - DB9 (Pins 23, 24, 27, 28, 29, 30, 31, 32, 35, 36):
Digital Outputs, B bus. At high impedance in full rate
CMOS mode. DB9 is MSB.
OGND (Pins 25, 33, 41, 50): Output Driver Ground.
REFHA (Pins 5, 6): ADC High Reference. Bypass to
Pins 7, 8 with 0.1µF ceramic chip capacitor, to Pins 11, 12
with a 2.2µF ceramic capacitor and to ground with 1µF
ceramic capacitor.
OVDD (Pins 26, 34, 42, 49): Positive Supply for the Output
Drivers. Bypass to ground with 0.1µF ceramic chip
capacitor.
REFLB (Pins 7, 8): ADC Low Reference. Bypass to Pins 5,
6 with 0.1µF ceramic chip capacitor. Do not connect to
Pins 11, 12.
OFB (Pin 37): Over/Under Flow Output for B bus. High
when an over or under flow has occurred. At high impedance in full rate CMOS mode.
REFHB (Pins 9, 10): ADC High Reference. Bypass to
Pins 11, 12 with 0.1µF ceramic chip capacitor. Do not
connect to Pins 5, 6.
CLKOUTB (Pin 38): Data Valid Output for B bus. In demux
mode with interleaved update, latch B bus data on the
falling edge of CLKOUTB. In demux mode with simultaneous update, latch B bus data on the rising edge of
CLKOUTB. This pin does not become high impedance in
full rate CMOS mode.
REFLA (Pins 11, 12): ADC Low Reference. Bypass to
Pins 9, 10 with 0.1µF ceramic chip capacitor, to Pins 5, 6
with a 2.2µF ceramic capacitor and to ground with 1µF
ceramic capacitor.
VDD (Pins 13, 14, 15, 62, 63): 3.3V Supply. Bypass to
GND with 0.1µF ceramic chip capacitors.
GND (Pins 16, 61, 64): ADC Power Ground.
ENC+ (Pin 17): Encode Input. The input sample starts on
the positive edge.
ENC – (Pin 18): Encode Complement Input. Conversion
starts on the negative edge. Bypass to ground with 0.1µF
ceramic for single-ended ENCODE signal.
SHDN (Pin 19): Shutdown Mode Selection Pin. Connecting SHDN to GND and OE to GND results in normal
operation with the outputs enabled. Connecting SHDN to
GND and OE to VDD results in normal operation with the
outputs at high impedance. Connecting SHDN to VDD and
OE to GND results in nap mode with the outputs at high
impedance. Connecting SHDN to VDD and OE to VDD
results in sleep mode with the outputs at high impedance.
OE (Pin 20): Output Enable Pin. Refer to SHDN pin
function.
DNC (Pins 21, 22, 40, 43): Do not connect these pins.
CLKOUTA (Pin 39): Data Valid Output for A bus. Latch A
bus data on the falling edge of CLKOUTA.
DA0 - DA9 (Pins 44 to 48, 51 to 55): Digital Outputs, A bus.
DA9 is the MSB.
OFA (Pin 56): Over/Under Flow Output for A bus. High
when an over or under flow has occurred.
LVDS (Pin 57): Output Mode Selection Pin. Connecting
LVDS to 0V selects full rate CMOS mode. Connecting
LVDS to 1/3VDD selects demux CMOS mode with simultaneous update. Connecting LVDS to 2/3VDD selects demux
CMOS mode with interleaved update. Connecting LVDS to
VDD selects LVDS mode.
MODE (Pin 58): Output Format and Clock Duty Cycle
Stabilizer Selection Pin. Connecting MODE to 0V selects
straight binary output format and turns the clock duty
cycle stabilizer off. Connecting MODE to 1/3VDD selects
straight binary output format and turns the clock duty
cycle stabilizer on. Connecting MODE to 2/3VDD selects
2’s complement output format and turns the clock duty
cycle stabilizer on. Connecting MODE to VDD selects 2’s
complement output format and turns the clock duty cycle
stabilizer off.
22301p
12
LTC2230/LTC2231
U
U
U
PI FU CTIO S
SENSE (Pin 59): Reference Programming Pin. Connecting
SENSE to VCM selects the internal reference and a ±0.5V
input range. VDD selects the internal reference and a ±1V
input range. An external reference greater than 0.5V and
less than 1V applied to SENSE selects an input range of
±VSENSE. ±1V is the largest valid input range.
VCM (Pin 60): 1.6V Output and Input Common Mode Bias.
Bypass to ground with 2.2µF ceramic chip capacitor.
SHDN (Pin 19): Shutdown Mode Selection Pin. Connecting SHDN to GND and OE to GND results in normal
operation with the outputs enabled. Connecting SHDN to
GND and OE to VDD results in normal operation with the
outputs at high impedance. Connecting SHDN to VDD and
OE to GND results in nap mode with the outputs at high
impedance. Connecting SHDN to VDD and OE to VDD
results in sleep mode with the outputs at high impedance.
GND (Exposed Pad): ADC Power Ground. The exposed
pad on the bottom of the package needs to be soldered to
ground.
OE (Pin 20): Output Enable Pin. Refer to SHDN pin
function.
(LVDS Mode)
OGND (Pins 25, 33, 41, 50): Output Driver Ground.
AIN+ (Pins 1, 2): Positive Differential Analog Input.
AIN– (Pins 3, 4): Negative Differential Analog Input.
OVDD (Pins 26, 34, 42, 49): Positive Supply for the
Output Drivers. Bypass to ground with 0.1µF ceramic chip
capacitor.
REFHA (Pins 5, 6): ADC High Reference. Bypass to
Pins 7, 8 with 0.1µF ceramic chip capacitor, to Pins 11, 12
with a 2.2µF ceramic capacitor and to ground with 1µF
ceramic capacitor.
D0–/D0+ to D9–/D9+ (Pins 27 to 32, 37 to 40, 43 to 48, 51
to 54): LVDS Digital Outputs. All LVDS outputs require
differential 100Ω termination resistors at the LVDS receiver. D9 –/D9+ is the MBS.
REFLB (Pins 7, 8): ADC Low Reference. Bypass to Pins 5,
6 with 0.1µF ceramic chip capacitor. Do not connect to
Pins 11, 12.
CLKOUT–/CLKOUT+ (Pins 35 to 36): LVDS Data Valid
Output. Latch data on rising edge of CLKOUT–, falling edge
of CLKOUT+.
REFHB (Pins 9, 10): ADC High Reference. Bypass to
Pins 11, 12 with 0.1µF ceramic chip capacitor. Do not
connect to Pins 5, 6.
OF–/OF+ (Pins 55 to 56): LVDS Over/Under Flow Output.
High when an over or under flow has occurred.
REFLA (Pins 11, 12): ADC Low Reference. Bypass to
Pins 9, 10 with 0.1µF ceramic chip capacitor, to Pins 5, 6
with a 2.2µF ceramic capacitor and to ground with 1µF
ceramic capacitor.
VDD (Pins 13, 14, 15, 62, 63): 3.3V Supply. Bypass to
GND with 0.1µF ceramic chip capacitors.
GND (Pins 16, 61, 64): ADC Power Ground.
ENC+ (Pin 17): Encode Input. The input sample starts on
the positive edge.
ENC– (Pin 18): Encode Complement Input. Conversion
starts on the negative edge. Bypass to ground with 0.1µF
ceramic for single-ended ENCODE signal.
DNC (Pins 21, 22, 23, 24): Do not connect these pins.
LVDS (Pin 57): Output Mode Selection Pin. Connecting
LVDS to 0V selects full rate CMOS mode. Connecting
LVDS to 1/3VDD selects demux CMOS mode with simultaneous update. Connecting LVDS to 2/3VDD selects demux
CMOS mode with interleaved update. Connecting LVDS to
VDD selects LVDS mode.
MODE (Pin 58): Output Format and Clock Duty Cycle
Stabilizer Selection Pin. Connecting MODE to 0V selects
straight binary output format and turns the clock duty
cycle stabilizer off. Connecting MODE to 1/3VDD selects
straight binary output format and turns the clock duty
cycle stabilizer on. Connecting MODE to 2/3VDD selects
2’s complement output format and turns the clock duty
cycle stabilizer on. Connecting MODE to VDD selects 2’s
complement output format and turns the clock duty cycle
stabilizer off.
22301p
13
LTC2230/LTC2231
U
U
U
PI FU CTIO S
VCM (Pin 60): 1.6V Output and Input Common Mode Bias.
Bypass to ground with 2.2µF ceramic chip capacitor.
SENSE (Pin 59): Reference Programming Pin. Connecting
SENSE to VCM selects the internal reference and a ±0.5V
input range. VDD selects the internal reference and a ±1V
input range. An external reference greater than 0.5V and
less than 1V applied to SENSE selects an input range of
±VSENSE. ±1V is the largest valid input range.
GND (Exposed Pad): ADC Power Ground. The exposed
pad on the bottom of the package needs to be soldered to
ground.
W
FUNCTIONAL BLOCK DIAGRA
U
U
AIN+
AIN–
VCM
FIRST PIPELINED
ADC STAGE
(4 BITS)
INPUT
S/H
SECOND PIPELINED
ADC STAGE
(3 BITS)
THIRD PIPELINED
ADC STAGE
(3 BITS)
FOURTH PIPELINED
ADC STAGE
(3 BITS)
FIFTH PIPELINED
ADC STAGE
(3 BITS)
1.6V
REFERENCE
2.2µF
SHIFT REGISTER
AND CORRECTION
RANGE
SELECT
REFH
SENSE
REFL
INTERNAL CLOCK SIGNALS
OVDD
REF
BUF
DIFFERENTIAL
INPUT
LOW JITTER
CLOCK
DRIVER
DIFF
REF
AMP
REFLB REFHA
2.2µF
0.1µF
CONTROL
LOGIC
•
•
•
OUTPUT
DRIVERS
+ OF
–
+ D9
–
+
–
+
–
D0
CLKOUT
22201 F01
REFLA REFHB
OGND
ENC+
ENC–
M0DE LVDS SHDN
OEL
0.1µF
1µF
1µF
Figure 1. Functional Block Diagram
W
UW
TI I G DIAGRA S
LVDS Output Mode Timing
All Outputs Are Differential and Have LVDS Levels
tAP
ANALOG
INPUT
N+4
N+2
N
N+3
tH
N+1
tL
ENC –
ENC +
tD
N–5
D0-D9, OF
CLOCKOUT –
N–4
N–3
N–2
N–1
tC
CLOCKOUT +
22201 TD01
22301p
14
LTC2230/LTC2231
W
UW
TI I G DIAGRA S
Full-Rate CMOS Output Mode Timing
All Outputs Are Single-Ended and Have CMOS Levels
tAP
ANALOG
INPUT
N+4
N+2
N
N+3
tH
N+1
tL
ENC –
ENC +
tD
N–5
DA0-DA9, OFA
N–4
N–3
N–2
N–1
tC
CLOCKOUTB
CLOCKOUTA
HIGH IMPEDANCE
DB0-DB9, OFB
22201 TD02
Demultiplexed CMOS Outputs with Interleaved Update
All Outputs Are Single-Ended and Have CMOS Levels
tAP
ANALOG
INPUT
N+4
N+2
N
N+3
tH
N+1
tL
ENC –
ENC +
tD
N–5
DA0-DA9, OFA
N–3
N–1
tD
N–6
DB0-DB9, OFB
N–4
tC
N–2
tC
CLOCKOUTB
CLOCKOUTA
22201 TD03
Demultiplexed CMOS Outputs with Simultaneous Update
All Outputs Are Single-Ended and Have CMOS Levels
tAP
ANALOG
INPUT
N+4
N+2
N
N+3
tH
N+1
tL
ENC –
ENC +
tD
DA0-DA9, OFA
N–6
N–4
N–2
N–5
N–3
N–1
tD
DB0-DB9, OFB
tC
CLOCKOUTB
CLOCKOUTA
22201 TD04
22301p
15
LTC2230/LTC2231
U
U
W
U
APPLICATIO S I FOR ATIO
DYNAMIC PERFORMANCE
input tone to the RMS value of the largest 3rd order
intermodulation product.
Signal-to-Noise Plus Distortion Ratio
The signal-to-noise plus distortion ratio [S/(N + D)] is the
ratio between the RMS amplitude of the fundamental input
frequency and the RMS amplitude of all other frequency
components at the ADC output. The output is band limited
to frequencies above DC to below half the sampling
frequency.
Spurious Free Dynamic Range (SFDR)
Signal-to-Noise Ratio
Input Bandwidth
The signal-to-noise ratio (SNR) is the ratio between the
RMS amplitude of the fundamental input frequency and
the RMS amplitude of all other frequency components
except the first five harmonics and DC.
The input bandwidth is that input frequency at which the
amplitude of the reconstructed fundamental is reduced by
3dB for a full scale input signal.
Spurious free dynamic range is the peak harmonic or
spurious noise that is the largest spectral component
excluding the input signal and DC. This value is expressed
in decibels relative to the RMS value of a full scale input
signal.
Aperture Delay Time
Total Harmonic Distortion
Total harmonic distortion is the ratio of the RMS sum of all
harmonics of the input signal to the fundamental itself. The
out-of-band harmonics alias into the frequency band
between DC and half the sampling frequency. THD is
expressed as:
2
2
2
2
THD = 20Log √(V2 + V3 + V4 + . . . Vn )/V1
where V1 is the RMS amplitude of the fundamental frequency and V2 through Vn are the amplitudes of the
second through nth harmonics. The THD calculated in this
data sheet uses all the harmonics up to the fifth.
Intermodulation Distortion
If the ADC input signal consists of more than one spectral
component, the ADC transfer function nonlinearity can
produce intermodulation distortion (IMD) in addition to
THD. IMD is the change in one sinusoidal input caused by
the presence of another sinusoidal input at a different
frequency.
If two pure sine waves of frequencies fa and fb are applied
to the ADC input, nonlinearities in the ADC transfer function can create distortion products at the sum and difference frequencies of mfa ± nfb, where m and n = 0, 1, 2, 3,
etc. The 3rd order intermodulation products are 2fa + fb,
2fb + fa, 2fa – fb and 2fb – fa. The intermodulation
distortion is defined as the ratio of the RMS value of either
The time from when a rising ENC+ equals the ENC– voltage
to the instant that the input signal is held by the sample and
hold circuit.
Aperture Delay Jitter
The variation in the aperture delay time from conversion to
conversion. This random variation will result in noise
when sampling an AC input. The signal to noise ratio due
to the jitter alone will be:
SNRJITTER = –20log (2pi) • fIN • tJITTER
CONVERTER OPERATION
As shown in Figure 1, the LTC2230/LTC2231 is a CMOS
pipelined multistep converter. The converter has five
pipelined ADC stages; a sampled analog input will result in
a digitized value five cycles later (see the Timing Diagram
section). For optimal AC performance the analog inputs
should be driven differentially. For cost sensitive applications, the analog inputs can be driven single-ended with
slightly worse harmonic distortion. The encode input is
differential for improved common mode noise immunity.
The LTC2230/LTC2231 has two phases of operation,
determined by the state of the differential ENC+/ENC– input
pins. For brevity, the text will refer to ENC+ greater than
ENC– as ENC high and ENC+ less than ENC– as ENC low.
22301p
16
LTC2230/LTC2231
U
W
U U
APPLICATIO S I FOR ATIO
Each pipelined stage shown in Figure 1 contains an ADC,
a reconstruction DAC and an interstage residue amplifier.
In operation, the ADC quantizes the input to the stage and
the quantized value is subtracted from the input by the
DAC to produce a residue. The residue is amplified and
output by the residue amplifier. Successive stages operate
out of phase so that when the odd stages are outputting
their residue, the even stages are acquiring that residue
and vice versa.
When ENC is low, the analog input is sampled differentially
directly onto the input sample-and-hold capacitors, inside
the “Input S/H” shown in the block diagram. At the instant
that ENC transitions from low to high, the sampled input
is held. While ENC is high, the held input voltage is
buffered by the S/H amplifier which drives the first pipelined
ADC stage. The first stage acquires the output of the S/H
during this high phase of ENC. When ENC goes back low,
the first stage produces its residue which is acquired by
the second stage. At the same time, the input S/H goes
back to acquiring the analog input. When ENC goes back
high, the second stage produces its residue which is
acquired by the third stage. An identical process is repeated for the third and fourth stages, resulting in a fourth
stage residue that is sent to the fifth stage ADC for final
evaluation.
Each ADC stage following the first has additional range to
accommodate flash and amplifier offset errors. Results
from all of the ADC stages are digitally synchronized such
that the results can be properly combined in the correction
logic before being sent to the output buffer.
SAMPLE/HOLD OPERATION AND INPUT DRIVE
Sample/Hold Operation
Figure 2 shows an equivalent circuit for the LTC2230/
LTC2231 CMOS differential sample-and-hold. The analog
inputs are connected to the sampling capacitors (CSAMPLE)
through NMOS transistors. The capacitors shown attached to each input (CPARASITIC) are the summation of all
other capacitance associated with each input.
During the sample phase when ENC is low, the transistors
connect the analog inputs to the sampling capacitors and
they charge to, and track the differential input voltage.
When ENC transitions from low to high, the sampled input
voltage is held on the sampling capacitors. During the hold
phase when ENC is high, the sampling capacitors are
disconnected from the input and the held voltage is passed
to the ADC core for processing. As ENC transitions from
high to low, the inputs are reconnected to the sampling
capacitors to acquire a new sample. Since the sampling
capacitors still hold the previous sample, a charging glitch
proportional to the change in voltage between samples will
be seen at this time. If the change between the last sample
and the new sample is small, the charging glitch seen at
the input will be small. If the input change is large, such as
the change seen with input frequencies near Nyquist, then
a larger charging glitch will be seen.
LTC2230/LTC2231
VDD
AIN+
CSAMPLE
1.6pF
15Ω
CPARASITIC
1pF
VDD
AIN–
CSAMPLE
1.6pF
15Ω
CPARASITIC
1pF
VDD
1.6V
6k
ENC+
ENC–
6k
1.6V
22201 F02
Figure 2. Equivalent Input Circuit
Single-Ended Input
For cost sensitive applications, the analog inputs can be
driven single-ended. With a single-ended input the harmonic distortion and INL will degrade, but the SNR and
DNL will remain unchanged. For a single-ended input, AIN+
should be driven with the input signal and AIN– should be
connected to 1.6V or VCM.
Common Mode Bias
For optimal performance the analog inputs should be
driven differentially. Each input should swing ±0.5V for
the 2V range or ±0.25V for the 1V range, around a
common mode voltage of 1.6V. The VCM output pin (Pin
22301p
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LTC2230/LTC2231
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60) may be used to provide the common mode bias level.
VCM can be tied directly to the center tap of a transformer
to set the DC input level or as a reference level to an op amp
differential driver circuit. The VCM pin must be bypassed to
ground close to the ADC with a 2.2µF or greater capacitor.
width of most op amps will limit the SFDR at high input
frequencies.
Input Drive Impedance
The 25Ω resistors and 12pF capacitor on the analog inputs
serve two purposes: isolating the drive circuitry from the
sample-and-hold charging glitches and limiting the
wideband noise at the converter input. For input frequencies higher than 100MHz, the capacitor may need to be
decreased to prevent excessive signal loss.
As with all high performance, high speed ADCs, the
dynamic performance of the LTC2230/LTC2231 can be
influenced by the input drive circuitry, particularly the
second and third harmonics. Source impedance and input
reactance can influence SFDR. At the falling edge of ENC,
the sample-and-hold circuit will connect the 1.6pF sampling capacitor to the input pin and start the sampling
period. The sampling period ends when ENC rises, holding
the sampled input on the sampling capacitor. Ideally the
input circuitry should be fast enough to fully charge
the sampling capacitor during the sampling period
1/(2FENCODE); however, this is not always possible and the
incomplete settling may degrade the SFDR. The sampling
glitch has been designed to be as linear as possible to
minimize the effects of incomplete settling.
For the best performance, it is recommended to have a
source impedance of 100Ω or less for each input. The
source impedance should be matched for the differential
inputs. Poor matching will result in higher even order
harmonics, especially the second.
Input Drive Circuits
Figure 3 shows the LTC2230/LTC2231 being driven by an
RF transformer with a center tapped secondary. The
secondary center tap is DC biased with VCM, setting the
ADC input signal at its optimum DC level. Figure 3 shows
a 1:1 turns ratio transformer. Other turns ratios can be
used if the source impedance seen by the ADC does not
exceed 100Ω for each ADC input. A disadvantage of using
a transformer is the loss of low frequency response. Most
small RF transformers have poor performance at frequencies below 1MHz.
Figure 4 demonstrates the use of a differential amplifier to
convert a single ended input signal into a differential input
signal. The advantage of this method is that it provides low
frequency input response; however, the limited gain band-
Figure 5 shows a single-ended input circuit. The impedance seen by the analog inputs should be matched. This
circuit is not recommended if low distortion is required.
VCM
2.2µF
0.1µF
ANALOG
INPUT
T1
1:1
25Ω
25Ω
AIN+
0.1µF
AIN+
LTC2230/
LTC2231
12pF
25Ω
AIN–
25Ω
AIN–
T1 = MA/COM ETC1-1T
RESISTORS, CAPACITORS
ARE 0402 PACKAGE SIZE
22301 F03
Figure 3. Single-Ended to Differential Conversion
Using a Transformer
VCM
HIGH SPEED
DIFFERENTIAL
25Ω
AMPLIFIER
ANALOG
INPUT
+
AIN+
AIN+
+
LTC2230/
LTC2231
12pF
CM
–
2.2µF
–
AIN–
25Ω
AIN–
AMPLIFIER = LTC6600-20, AD8138, ETC.
22301 F04
Figure 4. Differential Drive with an Amplifier
VCM
10k
0.1µF
ANALOG
INPUT
2.2µF
10k
25Ω
AIN+
AIN+
12pF
25Ω
LTC2230/
LTC2231
AIN–
AIN–
0.1µF
22301 F05
Figure 5. Single-Ended Drive
22301p
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The AIN+ and AIN– inputs each have two pins to reduce
package inductance. The two AIN+ and the two AIN– pins
should be shorted together.
For input frequencies above 100MHz the input circuits of
Figure 6, 7 and 8 are recommended. The balun transformer gives better high frequency response than a flux
coupled center tapped transformer. The coupling capacitors allow the analog inputs to be DC biased at 1.6V. In
Figure 8 the series inductors are impedance matching
elements that maximize the ADC bandwidth.
VCM
2.2µF
0.1µF
ANALOG
INPUT
25Ω
12Ω
AIN+
0.1µF
AIN+
T1
0.1µF
LTC2230/
LTC2231
8pF
25Ω
12Ω
AIN–
AIN–
T1 = MA/COM ETC1-1-13
RESISTORS, CAPACITORS
ARE 0402 PACKAGE SIZE
22301 F06
Figure 6. Recommended Front End Circuit for Input
Frequencies Between 100MHz and 250MHz
VCM
2.2µF
0.1µF
AIN+
ANALOG
INPUT
25Ω
0.1µF
AIN+
LTC2230/
LTC2231
Reference Operation
Figure 9 shows the LTC2230/LTC2231 reference circuitry
consisting of a 1.6V bandgap reference, a difference
amplifier and switching and control circuit. The internal
voltage reference can be configured for two pin selectable
input ranges of 2V (±1V differential) or 1V (±0.5V differential). Tying the SENSE pin to VDD selects the 2V range;
typing the SENSE pin to VCM selects the 1V range.
The 1.6V bandgap reference serves two functions: its
output provides a DC bias point for setting the common
mode voltage of any external input circuitry; additionally,
the reference is used with a difference amplifier to generate the differential reference levels needed by the internal
ADC circuitry. An external bypass capacitor is required for
the 1.6V reference output, VCM. This provides a high
frequency low impedance path to ground for internal and
external circuitry.
The difference amplifier generates the high and low reference for the ADC. High speed switching circuits are
connected to these outputs and they must be externally
bypassed. Each output has four pins: two each of REFHA
and REFHB for the high reference and two each of REFLA
and REFLB for the low reference. The multiple output pins
are needed to reduce package inductance. Bypass capacitors must be connected as shown in Figure 9.
LTC2230/LTC2231
T1
0.1µF
AIN–
25Ω
1.6V
AIN–
T1 = MA/COM ETC1-1-13
RESISTORS, CAPACITORS
ARE 0402 PACKAGE SIZE
4.7nH
0.1µF
T1
0.1µF
1V
AIN+
AIN+
TIE TO VDD FOR 2V RANGE;
TIE TO VCM FOR 1V RANGE;
RANGE = 2 • VSENSE FOR
0.5V < VSENSE < 1V
1µF
2.2µF
25Ω
LTC2230/
LTC2231
4.7nH
SENSE
REFLB
0.1µF
REFHA
BUFFER
INTERNAL ADC
HIGH REFERENCE
2.2µF
DIFF AMP
AIN–
1µF
REFLA
AIN–
T1 = MA/COM ETC1-1-13
RESISTORS, CAPACITORS
ARE 0402 PACKAGE SIZE
0.5V
RANGE
DETECT
AND
CONTROL
2pF
25Ω
1.6V BANDGAP
REFERENCE
22301 F07
VCM
0.1µF
4Ω
2.2µF
Figure 7. Recommended Front End Circuit for Input
Frequencies Between 250MHz and 500MHz
ANALOG
INPUT
VCM
22301 F08
Figure 8. Recommended Front End Circuit for Input
Frequencies Above 500MHz
0.1µF
REFHB
INTERNAL ADC
LOW REFERENCE
22301 F09
Figure 9. Equivalent Reference Circuit
22301p
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Other voltage ranges in between the pin selectable ranges
can be programmed with two external resistors as shown
in Figure 10. An external reference can be used by applying
its output directly or through a resistor divider to SENSE.
It is not recommended to drive the SENSE pin with a logic
device. The SENSE pin should be tied to the appropriate
level as close to the converter as possible. If the SENSE pin
is driven externally, it should be bypassed to ground as
close to the device as possible with a 1µF ceramic capacitor.
1.6V
2. Use as large an amplitude as possible; if transformer
coupled use a higher turns ratio to increase the amplitude.
3. If the ADC is clocked with a sinusoidal signal, filter the
encode signal to reduce wideband noise.
4. Balance the capacitance and series resistance at both
encode inputs so that any coupled noise will appear at both
inputs as common mode noise. The encode inputs have a
common mode range of 1.1V to 2.5V. Each input may be
driven from ground to VDD for single-ended drive.
VCM
LTC2230/LTC2231
2.2µF
VDD
12k
0.8V
12k
SENSE
LTC2230/
LTC2231
TO INTERNAL
ADC CIRCUITS
1µF
VDD
6k
22301 F10
ENC+
Figure 10. 1.6V Range ADC
Input Range
0.1µF
1:4
CLOCK
INPUT
VDD
50Ω
The input range can be set based on the application. The
2V input range will provide the best signal-to-noise performance while maintaining excellent SFDR. The 1V input
range will have better SFDR performance, but the SNR will
degrade by 1.7dB. See the Typical Performance Characteristics section.
1.6V BIAS
1.6V BIAS
6k
ENC–
22201 F11
Figure 11. Transformer Driven ENC+/ENC–
Driving the Encode Inputs
Maximum and Minimum Encode Rates
The noise performance of the LTC2230/LTC2231 can
depend on the encode signal quality as much as on the
analog input. The ENC+/ENC– inputs are intended to be
driven differentially, primarily for noise immunity from
common mode noise sources. Each input is biased through
a 6k resistor to a 1.6V bias. The bias resistors set the DC
operating point for transformer coupled drive circuits and
can set the logic threshold for single-ended drive circuits.
The maximum encode rate for the LTC2230/LTC2231 is
170Msps (LTC2230) and 135Msps (LTC2231). For the
ADC to operate properly, the encode signal should have a
50% (±5%) duty cycle. Each half cycle must have at least
2.8ns (LTC2230) or 3.5ns (LTC2231) for the ADC internal
circuitry to have enough settling time for proper operation.
Achieving a precise 50% duty cycle is easy with differential
sinusoidal drive using a transformer or using symmetric
differential logic such as PECL or LVDS.
Any noise present on the encode signal will result in
additional aperture jitter that will be RMS summed with the
inherent ADC aperture jitter.
In applications where jitter is critical (high input frequencies) take the following into consideration:
1. Differential drive should be used.
An optional clock duty cycle stabilizer circuit can be used
if the input clock has a non 50% duty cycle. This circuit
uses the rising edge of the ENC+ pin to sample the analog
input. The falling edge of ENC+ is ignored and the internal
falling edge is generated by a phase-locked loop. The input
clock duty cycle can vary from 30% to 70% and the clock
duty cycle stabilizer will maintain a constant 50% internal
22301p
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duty cycle. If the clock is turned off for a long period of
time, the duty cycle stabilizer circuit will require a hundred
clock cycles for the PLL to lock onto the input clock. To use
the clock duty cycle stabilizer, the MODE pin should be
connected to 1/3VDD or 2/3VDD using external resistors.
connected to GND, 1/3VDD, 2/3VDD or VDD. An external
resistor divider can be used to set the 1/3VDD or 2/3VDD
logic values. Table 1 shows the logic states for the
LVDS pin.
The lower limit of the LTC2230/LTC2231 sample rate is
determined by droop of the sample-and-hold circuits. The
pipelined architecture of this ADC relies on storing analog
signals on small valued capacitors. Junction leakage will
discharge the capacitors. The specified minimum operating frequency for the LTC2230/LTC2231 is 1Msps.
LVDS
Digital Output Mode
GND
Full-Rate CMOS
1/3VDD
Demultiplexed CMOS, Simultaneous Update
2/3VDD
Demultiplexed CMOS, Interleaved Update
VDD
LVDS
Digital Output Buffers (CMOS Modes)
ENC+
VTHRESHOLD = 1.6V
1.6V ENC
–
LTC2230/
LTC2231
0.1µF
22301 F12a
Figure 12a. Single-Ended ENC Drive,
Not Recommended for Low Jitter
3.3V
MC100LVELT22
Table 1. LVDS Pin Function
Figure 13a shows an equivalent circuit for a single output
buffer in the CMOS output mode. Each buffer is powered
by OVDD and OGND, isolated from the ADC power and
ground. The additional N-channel transistor in the output
driver allows operation down to low voltages. The internal
resistor in series with the output makes the output appear
as 50Ω to external circuitry and may eliminate the need for
external damping resistors.
3.3V
130Ω
Q0
130Ω
LTC2230/LTC2231
OVDD
ENC+
D0
VDD
0.5V
TO VDD
VDD
0.1µF
ENC–
Q0
83Ω
LTC2230/
LTC2231
OVDD
83Ω
22301 F12b
Figure 12b. ENC Drive Using a CMOS to PECL Translator
DATA
FROM
LATCH
PREDRIVER
LOGIC
43Ω
TYPICAL
DATA
OUTPUT
OE
OGND
DIGITAL OUTPUTS
22301 F13a
Digital Output Modes
Figure 13a. Digital Output Buffer in CMOS Mode
The LTC2230/LTC2231 can operate in several digital output modes: LVDS, CMOS running at full speed, and CMOS
demultiplexed onto two buses, each of which runs at half
speed. In the demultiplexed CMOS modes the two buses
(referred to as bus A and bus B) can either be updated on
alternate clock cycles (interleaved mode) or simultaneously
(simultaneous mode). For details on the clock timing, refer
to the timing diagrams.
As with all high speed/high resolution converters, the
digital output loading can affect the performance. The
digital outputs of the LTC2230/LTC2231 should drive a
minimal capacitive load to avoid possible interaction between the digital outputs and sensitive input circuitry. The
output should be buffered with a device such as an
ALVCH16373 CMOS latch. For full speed operation the
capacitive load should be kept under 10pF.
The LVDS pin selects which digital output mode the part
uses. This pin has a four-level logic input which should be
Lower OVDD voltages will also help reduce interference
from the digital outputs.
22301p
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Digital Output Buffers (LVDS Mode)
Overflow Bit
Figure 13b shows an equivalent circuit for a differential
output pair in the LVDS output mode. A 3.5mA current is
steered from OUT+ to OUT– or vice versa which creates a
±350mV differential voltage across the 100Ω termination
resistor at the LVDS receiver. A feedback loop regulates
the common mode output voltage to 1.25V. For proper
operation each LVDS output pair needs an external 100Ω
termination resistor, even if the signal is not used (such as
OF+/OF– or CLKOUT+/CLKOUT–). To minimize noise the
PC board traces for each LVDS output pair should be
routed close together. To minimize clock skew all LVDS PC
board traces should have about the same length.
An overflow output bit indicates when the converter is
overranged or underranged. In CMOS mode, a logic high
on the OFA pin indicates an overflow or underflow on the
A data bus, while a logic high on the OFB pin indicates an
overflow or underflow on the B data bus. In LVDS mode,
a differential logic high on the OF+/OF– pins indicates an
overflow or underflow.
LTC2230/LTC2231
OVDD
D
D
OUT+
–
+
10k
10k
100Ω
1.25V
LVDS
RECEIVER
OUT–
D
D
3.5mA
OGND
Output Clock
The ADC has a delayed version of the ENC+ input available
as a digital output, CLKOUT. The CLKOUT pin can be used
to synchronize the converter data to the digital system. This
is necessary when using a sinusoidal encode. In all CMOS
modes, A bus data will be updated just after CLKOUTA rises
and can be latched on the falling edge of CLKOUTA. In demux
CMOS mode with interleaved update, B bus data will be
updated just after CLKOUTB rises and can be latched on the
falling edge of CLKOUTB. In demux CMOS mode with simultaneous update, B bus data will be updated just after
CLKOUTB falls and can be latched on the rising edge of
CLKOUTB. In LVDS mode, data will be updated just after
CLKOUT+/CLKOUT– rises and can be latched on the falling
edge of CLKOUT+/CLKOUT–.
22301 F13b
Figure 13b. Digital Output in LVDS Mode
Data Format
The LTC2230/LTC2231 parallel digital output can be selected for offset binary or 2’s complement format. The
format is selected with the MODE pin. Connecting MODE
to GND or 1/3VDD selects straight binary output format.
Connecting MODE to 2/3VDD or VDD selects 2’s complement output format. An external resistor divider can be
used to set the 1/3VDD or 2/3VDD logic values. Table 2
shows the logic states for the MODE pin.
Table 2. MODE Pin Function
Output Driver Power
Separate output power and ground pins allow the output
drivers to be isolated from the analog circuitry. The power
supply for the digital output buffers, OVDD, should be tied
to the same power supply as for the logic being driven. For
example if the converter is driving a DSP powered by a 1.8V
supply then OVDD should be tied to that same 1.8V supply.
In the CMOS output mode, OVDD can be powered with any
voltage up to the VDD of the part. OGND can be powered with
any voltage from GND up to 1V and must be less than OVDD.
The logic outputs will swing between OGND and OVDD.
In the LVDS output mode, OVDD should be connected to a
3.3V supply and OGND should be connected to GND.
MODE Pin
Output Format
Clock Duty
Cycle Stablizer
0
Straight Binary
Off
Output Enable
1/3VDD
Straight Binary
On
2/3VDD
2’s Complement
On
VDD
2’s Complement
Off
The outputs may be disabled with the output enable pin, OE.
In CMOS or LVDS output modes OE high disables all data
outputs including OF and CLKOUT. The data access and bus
22301p
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relinquish times are too slow to allow the outputs to be
enabled and disabled during full speed operation. The output
Hi-Z state is intended for use during long periods of inactivity.
printed circuit board should ensure that digital and analog
signal lines are separated as much as possible. In particular, care should be taken not to run any digital track alongside an analog signal track or underneath the ADC.
The Hi-Z state is not a truly open circuit; the output pins that
make an LVDS output pair have a 20k resistance between
them. Therefore in the CMOS output mode, adjacent data
bits will have 20k resistance in between them, even in the
Hi-Z state.
High quality ceramic bypass capacitors should be used at
the VDD, OVDD, VCM, REFHA, REFHB, REFLA and REFLB pins
as shown in the block diagram on the front page of this data
sheet. Bypass capacitors must be located as close to the
pins as possible. Of particular importance are the capacitors between REFHA and REFLB and between REFHB and
REFLA. These capacitors should be as close to the device
as possible (1.5mm or less). Size 0402 ceramic capacitors
are recommended. The 2.2µF capacitor between REFHA and
REFLA can be somewhat further away. The traces connecting the pins and bypass capacitors must be kept short and
should be made as wide as possible.
Sleep and Nap Modes
The converter may be placed in shutdown or nap modes
to conserve power. Connecting SHDN to GND results in
normal operation. Connecting SHDN to VDD and OE to VDD
results in sleep mode, which powers down all circuitry
including the reference and typically dissipates 1mW. When
exiting sleep mode it will take milliseconds for the output
data to become valid because the reference capacitors have
to recharge and stabilize. Connecting SHDN to VDD and OE
to GND results in nap mode, which typically dissipates
35mW. In nap mode, the on-chip reference circuit is kept
on, so that recovery from nap mode is faster than that from
sleep mode, typically taking 100 clock cycles. In both sleep
and nap mode all digital outputs are disabled and enter the
Hi-Z state.
GROUNDING AND BYPASSING
The LTC2230/LTC2231 requires a printed circuit board with
a clean unbroken ground plane. A multilayer board with an
internal ground plane is recommended. Layout for the
The LTC2230/LTC2231 differential inputs should run parallel and close to each other. The input traces should be as
short as possible to minimize capacitance and to minimize
noise pickup.
HEAT TRANSFER
Most of the heat generated by the LTC2230/LTC2231 is
transferred from the die through the bottom-side exposed
pad and package leads onto the printed circuit board. For
good electrical and thermal performance, the exposed pad
should be soldered to a large grounded pad on the PC board.
It is critical that all ground pins are connected to a ground
plane of sufficient area.
22301p
23
24
VCM
R27
1k
J9
R29
1k
1/3VDD
R30
1k
GND
ANALOG
INPUT
MODE
VDD
R28
1k
2/3VDD
C23
0.1µF
C27
0.1µF
JP19
JP14
JP13
JP7
T1
ETC1-1T
C39
0.1µF
R11
24.9k
R12
24.9k
R10
24.9k
R9
24.9k
C22
0.1µF
1
2
3
4
AIN–
5
6
C16
C17
0.1µF 7
1µF
8
C19
2.2µF
9
10
C18
C11
VDD
1µF
0.1µF 11
12
C21
62
0.1µF
63
13
VDD
14
15
C24
VDD JP3
0.1µF
17
CLK
18
GND
SHDN
CLK
19
20
25
C29
33
2.2µF
VDD
GND
41
VDD
50
0E
JP1
60
VCM
JP20
SENSE
59
VDD
16
VCM JP21
61
VCM
64
JP22
EXT
58
REF
57
C35
VDD
0.1µF
C7
12pF
AIN–
AIN+
C30
0.1µF
C31
0.1µF
C32
0.1µF
C33
0.1µF
C34
4.7µF
56
55
54
53
52
51
48
47
46
45
44
43
40
39
38
37
36
35
32
31
30
29
28
27
24
23
22
21
49
42
34
26
VDD
ENCODE
INPUT
VDD
3.3V
VDD
R7
100Ω
C26
0.1µF
1
A0
2
A1
3
A2
4
A3
C4
0.1µF
R23
100Ω
R16
100Ω
T2
ETC1-1T
C3
4.7µF
R24
100Ω
R15
100Ω
R8
100Ω
C20
0.1µF
JP4
8
VCC
7
WP
6
SCL
5
SDA
R2
4.99k 1%
R21
100Ω
ENABLE
R20
100Ω
R18
100Ω
CLK
C25
33pF
CLK
R4
4.99k 1%
R3
4.99k 1%
R19 100Ω
R17
100Ω
SDA
SCL
VSS
VCC_IN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
GND
GND
EN/12
RUN1–
RUN1+
RUN2+
RUN2–
RUN3–
RUN3+
RUN4+
RUN4–
VCC
EN
RUN5–
RUN5+
RUN6+
RUN6–
RUN7–
RUN7+
RUN8+
RUN8–
EN/34
GND
VBB
C1
0.1µF
OPT
VCC
VCC 3.3V
VCC
VCC
Evaluation Circuit Schematic of the LTC2230
J6
R25
100Ω
R14
100Ω
PWR GND
GND
R26
100Ω
R13
100Ω
GND
GND
EN/12
RUN1–
RUN1+
RUN2+
RUN2–
RUN3–
RUN3+
RUN4+
RUN4–
VCC
EN
RUN5–
RUN5+
RUN6+
RUN6–
RUN7–
RUN7+
RUN8+
RUN8–
EN/34
GND
VBB
C2
0.1µF
VCC
VCC
EN/78
DOUT1–
DOUT1+
DOUT2+
DOUT2–
DOUT3–
DOUT3+
DOUT4+
DOUT4–
GND
GND
DOUT5–
DOUT5+
DOUT6+
DOUT6–
DOUT7–
DOUT7+
DOUT8+
DOUT8–
EN/56
VCC
VCC
VCC
VCC
EN/78
DOUT1–
DOUT1+
DOUT2+
DOUT2–
DOUT3–
DOUT3+
DOUT4+
DOUT4–
GND
GND
DOUT5–
DOUT5+
DOUT6+
DOUT6–
DOUT7–
DOUT7+
DOUT8+
DOUT8–
EN/56
VCC
VCC
C5
0.1µF
VDD
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
VCC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
C6
0.1µF
L1
VCC
VCC
C8
0.1µF
C9
0.1µF
C5
4.7µF
MURATA
BLM18BB470SN
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
C10
0.1µF
EDGE-CON-100
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
C12
0.1µF
R6
4.7k
C36
4.7µF
VCC
ENABLE
SDA
VCC_IN
VSS
SCL
U U
W
AIN+
LTC2230
AIN+
OF+/OFA
AIN+
OF–/DA11
AIN–
D11+/DA10
AIN–
D11–/DA9
REFHA
D10+/DA8
REFHA
D10–/DA7
REFLB
D9+/DA6
REFLB
D9–/DA5
REFHB
D8+/DA4
REFHB
D8–/DA3
REFLA
D7+/DA2
REFLA
D7–/DA1
VDD
D6+/DA0
VDD D6–/CLKOUTA
+
VDD D5 /CLKOUTB
VDD
DB5–/OFB
VDD CLKOUT+/DB11
ENC+ CLKOUT–/DB10
ENC–
D4+/DB9
SHDN
D4–/DB8
OEL
D3+/DB7
OGND
D3–/DB6
OGND
D2+/DB5
OGND
D2–/DB4
OGND
D1+/DB3
VCM
D1–/DB2
SENSE
D0+/DB1
GND
D0–/DB0
GND
OVDD
GND
OVDD
MODE
OVDD
LVDS
OVDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
APPLICATIO S I FOR ATIO
U
R1
100Ω
LTC2230/LTC2231
22301p
LTC2230/LTC2231
U
W
U U
APPLICATIO S I FOR ATIO
Silkscreen Top
Layer 1 Component Side
Layer 2 GND Plane
22301p
25
LTC2230/LTC2231
U
W
U U
APPLICATIO S I FOR ATIO
Layer 3 Power Plane
Layer 4 Bottom Side
22301p
26
LTC2230/LTC2231
U
PACKAGE DESCRIPTIO
UP Package
64-Lead Plastic QFN (9mm × 9mm)
(Reference LTC DWG # 05-08-1705)
0.70 ±0.05
7.15 ±0.05
8.10 ±0.05 9.50 ±0.05
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE
MO-220 VARIATION WNJR-5
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE
DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT,
SHALL NOT EXCEED 0.20mm ON ANY SIDE, IF PRESENT
4. EXPOSED PAD SHALL BE SOLDER PLATED
5. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PACKAGE OUTLINE
0.25 ±0.05
0.50 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
9 .00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
63 64
0.40 ± 0.10
PIN 1 TOP MARK
(SEE NOTE 5)
1
2
PIN 1
CHAMFER
7.15 ± 0.10
(4-SIDES)
(UP64) QFN 0903
0.25 ± 0.05
0.200 REF
0.50 BSC
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
22301p
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
27
LTC2230/LTC2231
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1747
12-Bit, 80Msps ADC
72dB SNR, 87dB SFDR, 48-Pin TSSOP Package
LTC1748
14-Bit, 80Msps ADC
76.3dB SNR, 90dB SFDR, 48-Pin TSSOP Package
LTC1749
12-Bit, 80Msps Wideband ADC
Up to 500MHz IF Undersampling, 87dB SFDR
LTC1750
14-Bit, 80Msps Wideband ADC
Up to 500MHz IF Undersampling, 90dB SFDR
LTC2220
12-Bit, 170Msps ADC
890mW, 67.5dB SNR, 9mm x 9mm QFN Package
LTC2221
12-Bit, 135Msps ADC
660mW, 67.5dB SNR, 9mm x 9mm QFN Package
LTC2222
12-Bit, 105Mspss ADC
475mW, 67.9dB SNR, 7mm x 7mm QFN Package
LT5514
Ultralow Distortion IF Amplifier/ADC
Driver with Digitally Controlled Gain
450MHz 1dB BW, 47dB OIP3, Digital Gain
Control 10.5dB to 33dB in 1.5dB/Step
22301p
28
Linear Technology Corporation
LT/TP 0604 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2004
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