UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Normal D882SS -x-AE3-R Ordering Number Lead Free Halogen Free D882SSL-x-AE3-R D882SSG -x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-018,D D882SS NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Ta=25°C Collector Dissipation TC=25°C SYMBOL VCBO VCEO VEBO IC ICP IB RATINGS 40 30 5 3 7 0.6 350 10 PC UNIT V V V A A A mW W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz MIN 40 30 5 TYP MAX 1000 1000 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 UNIT V V V nA nA V V MHz pF Note: Pulse test: PW<300μs, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160-320 E 200-400 2 of 4 QW-R206-018,D D882SS NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristics Derating Curve of Safe Operating Areas 1.2 0.8 Derating, IC (%) IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA 0.4 100 S/ b n io at ip ss Di 50 IB=2mA 0 4 8 12 16 Collector-Emitter Voltage (V) 0 20 -50 0 50 100 150 Case Temperature, TC (°C) 10 1 Collector Current, IC (A) IB=8mA 10 10 0 100 IC(max), DC 10-1 IC(max), Pulse 10 10 -2 10 -1 10 0 10 -2 100 1 Collector Current, Ic (A) 101 102 Collector-Emitter Voltage DC Current Gain Saturation Voltage 104 102 Saturation Voltage (mV) 103 DC Current Gain, hFE S VCE=5V 1m S 1m 10 mS 1 200 Safe Operating Area 3 102 d 0. Current Gain- Bandwidth Product, FT(MHz) Current Gain-Bandwidth Product 10 ite d ite IB=1mA 0 lim lim Collector Current, Ic (A) 150 IB=9mA 1.6 VCE=2V 101 100 100 10 1 10 3 10 4 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VBE(SAT) 103 VCE(SAT) 102 101 100 100 101 102 103 104 Collector Current, IC (mA) 3 of 4 QW-R206-018,D D882SS NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-018,D