AP60N2R5I
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
VDS @ Tj,max.
650V
▼ Simple Drive Requirement
RDS(ON)
2.5Ω
▼ RoHS Compliant & Halogen-Free
3
ID
3.5A
▼ Fast Switching Characteristic
D
G
S
Description
AP60N2R5 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
600
V
+20
V
3
3.5
A
3
2.2
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
14
A
PD@TC=25℃
Total Power Dissipation
26
W
PD@TA=25℃
Total Power Dissipation
1.92
W
8
mJ
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
Parameter
4.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201411261
AP60N2R5I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
600
-
-
V
VGS=10V, ID=1.4A
-
-
2.5
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=1.4A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1.4A
-
17
27.2
nC
Qgs
Gate-Source Charge
VDS=480V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.5
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
10
-
ns
tr
Rise Time
ID=1.4A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
670
1072
pF
Coss
Output Capacitance
VDS=100V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
6
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.4A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=1.4A, VGS=0V
-
210
-
ns
Qrr
Reverse Recovery Charge
dI/dt=50A/µs
-
770
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60N2R5I
8
4
o
o
6
4
2
3
0.37Ω
2
V G =5.0V
1
0
0
0
10
20
30
40
0
8
V DS , Drain-to-Source Voltage (V)
16
24
32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
4
I D =1.4A
I D =1.4A
V G =10V
2.1
.
Normalized RDS(ON)
T C =25 o C
RDS(ON) (Ω)
10V
8.0V
7.0V
6.0V
T C =150 C
10V
8.0V
7.0V
V G =6.0V
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
3
2
2
1
0
1.9
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C )
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I D =250uA
1.6
Normalized VGS(th)
IS (A)
8
6
T j = 150 o C
T j = 25 o C
4
1.2
0.8
0.4
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60N2R5I
f=1.0MHz
12
1000
I D =1.4A
V DS =480V
800
0.37Ω
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
400
4
200
2
0
C oss
C rss
0
0
4
8
12
16
20
0
100
200
Q G , Total Gate Charge (nC)
300
400
500
600
700
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this area
limited by RDS(ON)
10us
1
100us
1ms
10ms
100ms
DC
0.1
o
T C =25 C
Single Pulse
.
Normalized Thermal Response (Rthjc)
100
ID (A)
C iss
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
2
30
1.6
Normalized BVDSS
PD , Power Dissipation (W)
I D =1mA
20
1.2
0.8
10
0.4
0
0
0
50
100
150
o
T C , Case Temperature ( C )
Fig 11. Total Power Dissipation
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP60N2R5I
MARKING INFORMATION
Part Number
60N2R5
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5