Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC347 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC347 v04.0907 SWITCHES - CHIP 4 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications Features This switch is suitable DC - 20 GHz applications: High Isolation: >40 dB @ 20 GHz • Fiber Optics Low Insertion Loss: 1.6 dB @ 20 GHz • Microwave Radio Non-Reflective Design • Military Small Size: 1.3 x 0.8 x 0.1 mm • Space • VSAT General Description Functional Diagram The HMC347 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 20 GHz, the switch offers high isolation and low insertion loss. The switch features over 50 dB isolation at lower frequencies and over 40 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines of -5/0V, requires no Vee and has no current consumption. The switch operates down to DC. The chip features coplanar I/Os that allow 100% RF testing prior to delivery to the customer. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Frequency Insertion Loss Isolation 4 - 26 Min. DC - 20.0 GHz Typ. Max. Units 1.7 2.2 dB DC - 20.0 GHz 40 45 dB Return Loss “On State” DC - 20.0 GHz 10 13 dB Return Loss RF1, RF2 “On State” DC - 20.0 GHz 8 10 dB Input Power for 1 dB Compression 0.5 - 20.0 GHz 19 23 dBm Input Third Order Intercept 0.5 - 20.0 GHz 38 43 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 20.0 GHz 3 6 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Insertion Loss Isolation 0 0 ISOLATION (dB) INSERTION LOSS (dB) -10 -1 -2 +25C -55C -3 +85C RF1 RF2 -20 -30 -40 4 -50 -4 -5 -70 0 5 10 15 20 0 25 5 10 FREQUENCY (GHz) Return Loss 20 25 0.1 and 1 dB Input Compression Point 30 0 1 dB Compression Point 0.1 dB Compression Point RFC RF1,2 On RF1,2 Off 25 P1dB (dBm) -5 -10 -15 20 15 -20 10 -25 0 5 10 15 20 0 25 5 10 15 20 FREQUENCY (GHz) FREQUENCY (GHz) Input Third Order Intercept Point 50 45 IP3 (dBm) RETURN LOSS (dB) 15 FREQUENCY (GHz) SWITCHES - CHIP -60 40 +25C -55C +85C 35 30 0 2 4 6 8 10 12 14 16 18 20 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 27 HMC347 v04.0907 Absolute Maximum Ratings RF Input Power (Vctl = -5V) SWITCHES - CHIP 4 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Control Voltages +27 dBm State Bias Condition Control Voltage Range (A & B) +0.5V to -7.5 Vdc Low 0 to -0.2V @ 10 uA Max. Channel Temperature 150 °C High -5V @ 10 uA Typ. to -7V @ 40 uA Max. Thermal Resistance (Insertion Loss Path) 440 °C/W Thermal Resistance (Terminated Path) 540 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Truth Table Control Input ESD Sensitivity (HBM) Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate WP-8 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Suggested Driver Circuit SWITCHES - CHIP 4 Pad Descriptions Pad Number Function Description 1, 4, 7 RFC, RF1, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if the RF line potential is not equal to 0V. 2, 5, 8, 10 CTRLA See truth table and control voltage table. 3, 6, 9 CTRLB See truth table and control voltage table. GND Die bottom must be connected to RF ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 29 HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Assembly Diagram SWITCHES - CHIP 4 4 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. RF Ground Plane 4 SWITCHES - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 31