FBR5000 - FBR5010 FAST RECOVERY BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes BR50 FEATURES : * * * * * * 0.728(18.50) 0.688(17.40) High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) 0.570(14.50) 0.530(13.40) MECHANICAL DATA : 0.210(5.30) 0.200(5.10) 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL FBR 5000 FBR 5001 FBR 5002 FBR 5004 FBR 5006 FBR 5008 FBR 5010 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Maximum Average Forward Current Tc = 55 °C IF(AV) 50 Amps. IFSM 400 Amps. 2 It 664 AS VF 1.3 Volts IR 10 µA RATING Volts Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at I F = 25 Amps. Maximum DC Reverse Current Ta = 25 °C Ta = 100 °C at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) IR(H) Typical Thermal Resistance per diode (Note 2) RθJC 1 TJ - 50 to + 150 TSTG - 50 to + 150 Operating Junction Temperature Range Storage Temperature Range Trr 2 1.0 200 mA 300 500 ns °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink. UPDATE : NOVEMBER 1, 1998 RATING AND CHARACTERISTIC CURVES ( FBR5000 - FBR5010 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 A D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 50/200 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 cm 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 500 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 50 40 30 20 10 Tc = 55 °C 400 300 200 100 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 CASE TEMPERATURE, ( °C) 2 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 6 10 20 40 60 REVERSE CURRENT, MICROAMPERES PER DIODE 100 10 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE FORWARD CURRENT, AMPERES 4 NUMBER OF CYCLES AT 60Hz 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 2.0 140