TYPICAL PERFORMANCE CURVES
®
1200V APT25GN120B_S(G)
APT25GN120B
APT25GN120S
APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B)
TO
-2
D3PAK
47
(S)
C
G
G
C
E
E
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT25GN120B(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
67
I C2
Continuous Collector Current @ TC = 110°C
33
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
75
Switching Safe Operating Area @ TJ = 150°C
75A @ 1200V
Total Power Dissipation
272
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150µA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
5
5.8
6.5
1.4
1.7
2.1
Units
1200
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
1.9
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
100
2
600
Gate-Emitter Leakage Current (VGE = ±20V)
8
Integrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
11-2005
V(BR)CES
MIN
Rev D
Characteristic / Test Conditions
050-7600
Symbol
APT25GN120B_S(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
td(on)
tr
td(off)
tf
Eon1
Eon2
tr
td(off)
tf
A
ns
TBD
mJ
1490
2150
Inductive Switching (125°C)
22
VCC = 800V
17
VGE = 15V
335
RG = 1.0Ω 7
225
TBD
I C = 150A
Current Fall Time
44
Turn-on Switching Energy (Diode)
nC
135
TJ = +25°C
Turn-off Delay Time
Turn-on Switching Energy
V
280
6
Eon2
pF
75
RG = 1.0Ω 7
5
UNIT
85
17
4
MAX
10
VCC = 800V
Current Rise Time
Turn-off Switching Energy
155
I C = 150A
Eon1
Eoff
9.5
VGE = 15V
VGE = 15V
Turn-on Switching Energy (Diode)
Turn-on Delay Time
Gate Charge
22
Current Fall Time
td(on)
85
Inductive Switching (25°C)
Turn-off Delay Time
Turn-off Switching Energy
105
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Current Rise Time
Eoff
VGE = 0V, VCE = 25V
TJ = 150°C, R G = 4.3Ω 7, VGE =
Turn-on Delay Time
Turn-on Switching Energy
1800
I C = 150A
Switching Safe Operating Area
TYP
Capacitance
VCE = 600V
Qge
SSOA
MIN
55
TJ = +125°C
ns
mJ
2390
66
3075
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.46
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
050-7600
Rev D
11-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
15V
IC, COLLECTOR CURRENT (A)
40
10V
30
9V
20
8V
10
7V
0
FIGURE 1, Output Characteristics(TJ = 25°C)
60
TJ = 125°C
45
TJ = 25°C
30
TJ = -55°C
15
0
0
10V
30
9V
20
8V
10
7V
0
5
10
15
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
11V
40
0
0
5
10
15
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
12V
50
J
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 25A
C
T = 25°C
14
0
20
IC = 50A
3
2.5
IC = 25A
2
1.5
IC = 12.5A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.00
3
IC = 50A
2.5
2
IC = 25A
1.5
IC = 12.5A
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75 100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
1.10
1.05
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.5
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
40
80
70
60
50
40
30
20
10
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
11-2005
11V
50
60
Rev D
IC, COLLECTOR CURRENT (A)
12V
60
75
15V
70
050-7600
70
APT25GN120B_S(G)
80
80
VGE = 15V
20
15
10
VCE = 800V
TJ = 25°C, or 125°C
RG = 4.3Ω
L = 100µH
5
0
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
45
25
20
15
TJ = 25 or 125°C,VGE = 15V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
30
10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
7000
VCE = 800V
RG = 4.3Ω
L = 100µH
50
RG = 4.3Ω, L = 100µH, VCE = 800V
TJ = 125°C, VGE = 15V
200
150
TJ = 25°C, VGE = 15V
100
7000
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
6000
G
TJ = 125°C
5000
10 15 20 25 30 35 40
45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
100
0
0
4000
3000
2000
1000
TJ = 25°C
0
Eon2,50A
J
10000
Eoff,50A
8000
6000
4000
Eoff,25A
Eon2,25A
2000
Eoff,12.5A
Eon2,12.5A
0
G
TJ = 125°C
5000
4000
3000
2000
TJ = 25°C
1000
7000
V
= 800V
CE
V
= +15V
GE
T = 125°C
12000
6000
10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
14000
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
0
10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (µJ)
150
50
5
11-2005
VGE =15V,TJ=25°C
200
250
10
Rev D
250
300
35
050-7600
VGE =15V,TJ=125°C
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
RG = 4.3Ω, L = 100µH, VCE = 800V
40
300
0
10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
0
APT25GN120B_S(G)
350
30
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
6000
Eoff,50A
G
5000
4000
Eon2,50A
3000
Eoff,25A
2000
Eon2,25A
Eoff,12.5A
1000
0
0
Eon2,12.5A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
Cies
1,000
APT25GN120B_S(G)
80
4,000
500
100
Coes
50
Cres
70
60
50
40
30
20
10
0
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
0.3
t2
0.10
SINGLE PULSE
0.1
0
t1
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.00826
0.169
0.353
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 4.3Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
5
10
15 20 25
30 35 40 45
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
11-2005
0.0536
Power
(watts)
50
Rev D
Junction
temp. (°C)
100
050-7600
RC MODEL
FMAX, OPERATING FREQUENCY (kHz)
140
APT25GN120B_S(G)
Gate Voltage
10%
APT30DQ120
TJ = 125°C
td(on)
IC
V CC
90%
V CE
Collector Current
tr
A
5%
10%
5%
CollectorVoltage
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
CollectorVoltage
td(off)
90%
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
3
TO-247 Package Outline
D PAK Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
Collector
11-2005
Rev D
050-7600
5.38 (.212)
6.20 (.244)
Collector
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e3 SAC: Tin, Silver, Copper
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated