PHILIPS NE566 Function generator Datasheet

Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
DESCRIPTION
PIN CONFIGURATIONS
The NE/SE566 Function Generator is a voltage-controlled oscillator
of exceptional linearity with buffered square wave and triangle wave
outputs. The frequency of oscillation is determined by an external
resistor and capacitor and the voltage applied to the control terminal.
The oscillator can be programmed over a ten-to-one frequency
range by proper selection of an external resistance and modulated
over a ten-to-one range by the control voltage, with exceptional
linearity.
D, N Packages
GROUND 1
8
NC 2
7
C1
SQUARE WAVE OUTPUT 3
6
R1
TRIANGLE WAVE OUTPUT 4
5
MODULATION INPUT
V+
TOP VIEW
FEATURES
• Wide range of operating voltage (up to 24V; single or dual)
• High linearity of modulation
• Highly stable center frequency (200ppm/°C typical)
• Highly linear triangle wave output
• Frequency programming by means of a resistor or capacitor,
APPLICATIONS
• Tone generators
• Frequency shift keying
• FM modulators
• Clock generators
• Signal generators
• Function generators
voltage or current
• Frequency adjustable over 10-to-1 range with same capacitor
ORDERING INFORMATION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline (SO) Package
DESCRIPTION
0 to +70°C
NE566D
0174C
14-Pin Ceramic Dual In-Line Package (CERDIP)
0 to +70°C
NE566F
0581B
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE566N
0404B
8-Pin Plastic Dual In-Line Package (DIP)
-55°C to +125°C
SE566N
0404B
BLOCK DIAGRAM
V+
R1
6
VC
MODULATION 5
INPUT
8
SCHMITT
TRIGGER
CURRENT
SOURCES
BUFFER
AMPLIFIER 3
4
BUFFER
AMPLIFIER
7
C1
April 15, 1992
398
853-0910 06454
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
EQUIVALENT SCHEMATIC
6
R1
(EXTERNAL)
8
V+
5
VC
7
C1
(EXTER–
NAL)
3
4
5kΩ
1
GROUND
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V+
Maximum operating voltage
26
V
VIN, VC
Input voltage
3
VP-P
TSTG
Storage temperature range
-65 to +150
°C
TA
Operating ambient temperature range
NE566
0 to +70
°C
SE566
-55 to +125
°C
300
mW
PD
April 15, 1992
Power dissipation
399
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
DC ELECTRICAL CHARACTERISTICS
TA=25°C, VCC=±6V, unless otherwise specified.
SYMBOL
PARAMETER
SE566
Min
Typ
NE566
Max
Min
Typ
Max
UNIT
General
°C
TA
Operating ambient temperature range
-55
125
0
70
VCC
Operating supply voltage
±6
±12
±6
±12
V
ICC
Operating supply current
7
12.5
mA
Maximum operating frequency
1
12.5
7
VCO1
fMAX
Frequency drift with temperature
500
Frequency drift with supply voltage
0.1
Control terminal input impedance2
1
FM distortion (±10% deviation)
0.2
Maximum sweep rate
Sweep range
1
MHz
600
1
0.2
ppm/°C
2
1
0.75
0.4
1
1
10:1
10:1
%/V
MΩ
1.5
%
MHz
Output
Triangle wave output
impedance
voltage
50
1.9
linearity
2.4
1.9
0.2
50
Ω
2.4
VP-P
0.5
%
Square wave input
impedance
50
Ω
5
5.4
VP-P
40
50
50
voltage
5
5.4
duty Cycle
45
50
55
60
%
tR
Rise time
20
20
ns
tF
Fall Time
50
50
ns
NOTES:
1. The external resistance for frequency adjustment (R1) must have a value between 2kΩ and 20kΩ.
2. The bias voltage (VC) applied to the control terminal (Pin 5) should be in the range V+≤VC≤V+.
April 15, 1992
400
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
TYPICAL PERFORMANCE CHARACTERISTICS
Normalized Frequency as a
Function of Control Voltage
Normalized Frequency as a
Function of Resistance (R1)
2.5
RESISTANCE (R1 ) — (KΩ )
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
V+ = 12 VOLTS
VC = 10 VOLTS
50
20
10
5
2
1
0.1
3.0
CONTROL VOLTAGE
(BETWEEN PIN 8 AND PIN 5) — VOLTS
2
5
10
Rt = 4kΩ
MAXIMUM
TYPICAL
15.0
12.5
10.0
V+ = 12 VOLTS
VC = 10 VOLTS
R1 = 4k
1.0
0.1
0.01
0.001
7.5
5
+0.5
TYPICAL
0
–0.5
–1.0
–1.5
–2.0
–2.5
–75 –50 –25
0
+25 +50 +75 +100 +125
TEMPERATURE — (oC)
10
CAPACITANCE
1 (Cµ ) —
SUPPLY CURRENT — mA
1
+1.0
Frequency as a Function
of Capacitance (C1)
20.0
17.5
0.5
+1.5
NORMALIZED FREQUENCY
F
Power Supply Current as a
Function of Supply Voltage
0.2
V+ = 12 VOLTS
VC = 10 VOLTS
+2.0
VCO Output Waveforms
OUTPUT 3 — V OUTPUT PIN 4 — V
NORMALIZED FREQUENCY
V+ = 12 VOLTS
+2.5
CHANGE IN FREQUENCY — (%)
100
2.0
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
Change in Frequency as a
Function of Temperature
6
V+ = 12 VOLTS
5
4
12
10
8
6
4
0.0001
10
13
16
19
22
25
1
10
SUPPLY VOLTAGE — V
102
OPERATING INSTRUCTIONS
104
105
fO The NE/SE566 Function Generator is a general purpose
voltage-controlled oscillator designed for highly linear frequency
modulation. The circuit provides simultaneous square wave and
triangle wave outputs at frequencies up to 1MHz. A typical
connection diagram is shown in Figure 1. The control terminal (Pin
5) must be biased externally with a voltage (VC) in the range
106
2 [(V ) (V C)]
R1 C1 V and R1 should be in the range 2kΩ< R1<20kΩ.
A small capacitor (typically 0.001µF) should be connected between
Pins 5 and 6 to eliminate possible oscillation in the control current
source.
V+≤VC≤V+
If the VCO is to be used to drive standard logic circuitry, it may be
desirable to use a dual supply as shown in Figure 2. In this case the
square wave output has the proper DC levels for logic circuitry. RTL
can be driven directly from Pin 3. For DTL or TTL gates, which
require a current sink of more than 1mA, it is usually necessary to
connect a 5kΩ resistor between Pin 3 and negative supply. This
increases the current sinking capability to 2mA. The third type of
where VCC is the total supply voltage. In Figure 1, the control
voltage is set by the voltage divider formed with R2 and R3. The
modulating signal is then AC coupled with the capacitor C2. The
modulating signal can be direct coupled as well, if the appropriate
DC bias voltage is applied to the control terminal. The frequency is
given approximately by
April 15, 1992
103
FREQUENCY — Hz
401
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
interface shown uses a saturated transistor between the 566 and
the logic circuitry. This scheme is used primarily for TTL circuitry
which requires a fast fall time (<50ns) and a large current sinking
capability.
1.5K
V+
R2
1.5K
C2
R3
10K
.001µF
5K
R1
RTL
10K
.001µF
6
R1
10K
84
5 6
VC
SE/NE 566
7
1 3
8
3
VC 5
SE/NE 566
4
7
1
5K
C1
–6 VOLTS
C1
Figure 2.
Figure 1.
April 15, 1992
402
DTL
&
T 2L
DTL OR T2L
WITH FAST
FALL TIME
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