EN29LV160 EN29LV160 ******PRELIMINARY DRAFT****** 0. 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES - Byte program time: 8µs typical - Sector erase time: 500ms typical - Chip erase time: 17.5s typical • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.5V • >100K program/erase endurance cycle • Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm FBGA • Commercial Temperature Range • High performance program/erase speed GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV160 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Standard TSOP FBGA Top View, Balls Facing Down A6 A13 A5 A9 B6 A12 B5 A8 A4 B4 WE# RESET# A3 B3 RY/BY# NC A2 B2 A7 A17 A1 B1 A3 A4 C6 A14 C5 A10 D6 A15 D5 A11 E6 F6 A16 BYTE# E5 F5 DQ7 DQ14 G6 DQ15/A-1 G5 DQ13 H6 Vss H5 DQ6 C4 D4 E4 F4 G4 H4 NC A19 DQ5 DQ12 Vcc DQ4 C3 D3 E3 F3 G3 H3 DQ2 DQ10 DQ11 DQ3 D2 E2 F2 G2 H2 A5 DQ0 D1 E1 A18 C2 A6 C1 A2 NC A1 DQ8 F1 A0 CE# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 DQ9 G1 OE# DQ1 H1 Vss ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0 EN29LV160 FIGURE 1. LOGIC DIAGRAM TABLE 1. PIN DESCRIPTION Pin Name A0-A19 DQ0-DQ14 DQ15 / A-1 CE# OE# RESET# RY/BY# WE# Vcc Vss NC BYTE# Function 20 Addresses 15 Data Inputs/Outputs DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) Chip Enable Output Enable EN29LV160 DQ0 – DQ15 (A-1) A0 – A19 Hardware Reset Pin Reset Ready/Busy Output Write Enable Supply Voltage (2.7-3.6V) Ground Not Connected to anything Byte/Word Mode CE OE WE RY/BY Byte This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 2. Sector Address Tables (EN29LV160T) Sector Size (Kbytes/ Kwords) Address Range (in hexadecimal) 62/32 Byte mode (x8) 000000–00FFFF Word Mode (x16) 00000–07FFF X 64/32 010000–01FFFF 08000–0FFFF X X 64/32 020000–02FFFF 10000–17FFF X X X 64/32 030000–03FFFF 18000–1FFFF X X X 64/32 040000–04FFFF 20000–27FFF 1 X X X 64/32 050000–05FFFF 28000–2FFFF 1 0 X X X 64/32 060000–06FFFF 30000–37FFF 1 1 1 X X X 64/32 070000–07FFFF 38000–3FFFF 0 0 0 X X X 64/32 080000–08FFFF 40000–47FFF 1 0 0 1 X X X 64/32 090000–09FFFF 48000–4FFFF 0 1 0 1 0 X X X 64/32 0A0000–0AFFFF 50000–57FFF SA11 0 1 0 1 1 X X X 64/32 0B0000–0BFFFF 58000–5FFFF SA12 0 1 1 0 0 X X X 64/32 0C0000–0CFFFF 60000–67FFF SA13 0 1 1 0 1 X X X 64/32 0D0000–0DFFFF 68000–6FFFF SA14 0 1 1 1 0 X X X 64/32 0E0000–0EFFFF 70000–77FFF SA15 0 1 1 1 1 X X X 64/32 0F0000–0FFFFF 78000–7FFFF SA16 1 0 0 0 0 X X X 64/32 100000–10FFFF 80000–87FFF SA17 1 0 0 0 1 X X X 64/32 110000–11FFFF 88000–8FFFF SA18 1 0 0 1 0 X X X 64/32 120000–12FFFF 90000–97FFF SA19 1 0 0 1 1 X X X 64/32 130000–13FFFF 98000–9FFFF SA20 1 0 1 0 0 X X X 64/32 140000–14FFFF A0000–A7FFF SA21 1 0 1 0 1 X X X 64/32 150000–15FFFF A8000–AFFFF SA22 1 0 1 1 0 X X X 64/32 160000–16FFFF B0000–B7FFF SA23 1 0 1 1 1 X X X 64/32 170000–17FFFF B8000–BFFFF SA24 1 1 0 0 0 X X X 64/32 180000–18FFFF C0000–C7FFF SA25 1 1 0 0 1 X X X 64/32 190000–19FFFF C8000–CFFFF SA26 1 1 0 1 0 X X X 64/32 1A0000–1AFFFF D0000–D7FFF SA27 1 1 0 1 1 X X X 64/32 1B0000–1BFFFF D8000–DFFFF SA28 1 1 1 0 0 X X X 64/32 1C0000–1CFFFF E0000–E7FFF SA29 1 1 1 0 1 X X X 64/32 1D0000–1DFFFF E8000–EFFFF SA30 1 1 1 1 0 X X X 64/32 1E0000–1EFFFF F0000–F7FFF SA31 1 1 1 1 1 0 X X 32/16 1F0000–1F7FFF F8000–FBFFF SA32 1 1 1 1 1 1 0 0 8/4 1F8000–1F9FFF FC000–FCFFF SA33 1 1 1 1 1 1 0 1 8/4 1FA000–1FBFFF FD000–FDFFF SA34 1 1 1 1 1 1 1 X 16/8 1FC000–1FFFFF FE000–FFFFF Sector A19 A18 A17 A16 A15 A14 A13 A12 SA0 0 0 0 0 0 X X X SA1 0 0 0 0 1 X X SA2 0 0 0 1 0 X SA3 0 0 0 1 1 SA4 0 0 1 0 0 SA5 0 0 1 0 SA6 0 0 1 SA7 0 0 SA8 0 1 SA9 0 SA10 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 3. Sector Address Tables (EN29LV160B) Word Mode (x16) 16/8 000000–003FFF 00000–01FFF 0 8/4 004000–005FFF 02000–02FFF 1 1 8/4 006000–007FFF 03000–03FFF 1 X X 32/16 008000–00FFFF 04000–07FFF X X X 64/32 010000–01FFFF 08000–0FFFF X 64/32 020000–02FFFF 10000–17FFF X 64/32 030000–03FFFF 18000–1FFFF X 64/32 040000–04FFFF 20000–27FFF X 64/32 050000–05FFFF 28000–2FFFF X 64/32 060000–06FFFF 30000–37FFF X 64/32 070000–07FFFF 38000–3FFFF X 64/32 080000–08FFFF 40000–47FFF X 64/32 090000–09FFFF 48000–4FFFF X 64/32 0A0000–0AFFFF 50000–57FFF A19 A18 A17 A16 A15 A14 A13 A12 SA0 0 0 0 0 0 0 0 X SA1 0 0 0 0 0 0 1 SA2 0 0 0 0 0 0 SA3 0 0 0 0 0 SA4 0 0 0 0 1 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 1 1 1 1 0 0 0 1 1 0 0 1 1 0 0 1 0 1 0 1 0 1 0 1 0 Address Range (in hexadecimal) Byte mode (x8) Sector SA5 Sector Size (Kbytes/ Kwords) X X X X X X X X X X X X X X X X X X SA14 0 1 0 1 1 X X X 64/32 0B0000–0BFFFF 58000–5FFFF SA15 0 1 1 0 0 X X X 64/32 0C0000–0CFFFF 60000–67FFF SA16 0 1 1 0 1 X X X 64/32 0D0000–0DFFFF 68000–6FFFF SA17 0 1 1 1 0 X X X 64/32 0E0000–0EFFFF 70000–77FFF SA18 0 1 1 1 1 X X X 64/32 0F0000–0FFFFF 78000–7FFFF SA19 1 0 0 0 0 X X X 64/32 100000–10FFFF 80000–87FFF SA20 1 0 0 0 1 X X X 64/32 110000–11FFFF 88000–8FFFF SA21 1 0 0 1 0 X X X 64/32 120000–12FFFF 90000–97FFF X 64/32 130000–13FFFF 98000–9FFFF X 64/32 140000–14FFFF A0000–A7FFF X 64/32 150000–15FFFF A8000–AFFFF X 64/32 160000–16FFFF B0000–B7FFF X 64/32 170000–17FFFF B8000–BFFFF X 64/32 180000–18FFFF C0000–C7FFF X 64/32 190000–19FFFF C8000–CFFFF X 64/32 1A0000–1AFFFF D0000–D7FFF X 64/32 1B0000–1BFFFF D8000–DFFFF X 64/32 1C0000–1CFFFF E0000–E7FFF X 64/32 1D0000–1DFFFF E8000–EFFFF X 64/32 1E0000–1EFFFF F0000–F7FFF X 64/32 1F0000–1FFFFF F8000–FFFFF SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 1 1 1 1 1 1 1 1 0 1 1 1 1 0 0 0 0 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 PRODUCT SELECTOR GUIDE Product Number Speed Option EN29LV160 Regulated Voltage Range: Vcc=3.0 – 3.6 V Full Voltage Range: Vcc=2.7 – 3.6 V -70 -90 Max Access Time, ns (tacc) 70 90 Max CE# Access, ns (tce) 70 90 Max OE# Access, ns (toe) 30 35 BLOCK DIAGRAM RY/BY Vcc Vss DQ0-DQ15 (A-1) Block Protect Switches Erase Voltage Generator Input/Output Buffers State Control WE Command Register Program Voltage Generator Chip Enable Output Enable Logic CE OE Vcc Detector Timer Address Latch STB STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A0-A19 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 TABLE 3. OPERATING MODES 16M FLASH USER MODE TABLE Operation Read Write CMOS Standby TTL Standby Output Disable Hardware Reset Temporary Sector Unprotect CE# L L Vcc ± 0.3V H L X OE# L H X X H X WE# H L X X H X Reset# H H Vcc ± 0.3V H H L A0A19 AIN AIN X X X X X X X VID AIN DQ0-DQ7 DOUT DIN High-Z High-Z High-Z High-Z DQ8-DQ15 Byte# Byte# = VIL = VIH DOUT High-Z DIN High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z DIN DIN X Notes: L=logic low= VIL, H=Logic High= VIH, VID =11 ± 0.5V, X=Don’t Care (either L or H, but not floating!), DIN=Data In, DOUT=Data Out, AIN=Address In TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes) 16M FLASH MANUFACTURER/DEVICE ID TABLE Description Mode Manufacturer ID: Eon Device ID Word OE WE A19 to A12 A11 to A10 A9 A8 L L H X X VID X X X SA (top boot block) L L H Byte L L H Device ID Word L L H Byte L L H L L H (bottom boot block) Sector Protection Verification 2 CE A7 A6 A5 to A2 A1 A0 DQ8 to DQ15 DQ7 to DQ0 H X L X L L X 1CH VID X X L X L H 22h C4H X C4H X VID X X L X L H 22h 49H X 49H X VID X X L X H L 1 X X Note: 1. A8=H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh 2. A9 = VID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect Mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 01h (Protected) 00h (Unprotected) EN29LV160 USER MODE DEFINITIONS Word / Byte Configuration The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. When the Byte# Pin is set at logic ‘1’, then the device is in word configuration, DQ15-DQ0 are active and are controlled by CE# and OE#. On the other hand, if the Byte# Pin is set at logic ‘0’, then the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Standby Mode The EN29LV160 has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical). It is placed in CMOS-compatible standby when the CE pin is at VCC ± 0.5. RESET# and BYTE# pin must also be at CMOS input levels. The device also has a TTL-compatible standby mode, which reduces the maximum VCC current to < 1mA. It is placed in TTL-compatible standby when the CE pin is at VIH. When in standby modes, the outputs are in a high-impedance state independent of the OE input. Read Mode The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See “Erase Suspend/Erase Resume Commands” for more additional information. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the “Reset Command” additional details. Output Disable Mode When the CE or OE pin is at a logic high level (VIH), the output from the EN29LV160 is disabled. The output pins are placed in a high impedance state. Auto Select Identification Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ15–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (10.5 V to 11.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes table. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don’t-care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ15–DQ0. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 To access the autoselect codes in-system; the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See “Command Definitions” for details on using the autoselect mode. Write Mode Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. The Command Definitions in Table 5 show the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. See “Write Operation Status” for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. There are two methods to enabling this hardware protection circuitry. The first one requires only that the RESET# pin be at VID and then standard microprocessor timings can be used to enable or disable this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings. When doing Sector Unprotect, all the other sectors should be protected first. The second method is meant for programming equipment. This method requires VID be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a separate document called EN29LV160 Supplement, which can be obtained by contacting a representative of Eon Silicon Solution, Inc. Temporary Sector Unprotect Start This feature allows temporary unprotection of previously protected sector groups to change data while in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by simply selecting the sector addresses. Once is removed from the RESET# pin, all the previously protected sectors are protected again. See accompanying figure and timing diagrams for more details. COMMON FLASH MEMORY INTERFACE (CFI) Notes: 1. All protected sectors unprotected. 2. Previously protected sectors protected again. The common flash interface (CFI) specification outlines device and host systems software interrogation handshake, Reset#=VID (note 1) Perform Erase or Program Operations Reset#=VIH Temporary Sector Unprotect Completed (note 2) which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 then be device-independent, JEDEC IDindependent, and forward- and backwardcompatible for the specified flash device families. Flash vendirs can standardize their existing interfaces for long-term compatibility. The system can read CFI information at the addresses given in Tables 5-8. In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 5–8. The system must write the reset command to return the device to the autoselect mode. Table 5. CFI Query Identification String Adresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Adresses (Byte Mode) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h Addresses (Word Mode) 1Bh Addresses (Byte Mode) 36h Data 0027h 1Ch 38h 0036h 1Dh 1Eh 1Fh 20h 3Ah 3Ch 3Eh 40h 0000h 0000h 0004h 0000h 21h 22h 23h 24h 25h 26h 42h 44h 46h 48h 4Ah 4Ch 000Ah 0000h 0005h 0000h 0004h 0000h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists Table 6. System Interface String Description Vcc Min (write/erase) D7-D4: volt, D3 –D0: 100 millivolt Vcc Max (write/erase) D7-D4: volt, D3 –D0: 100 millivolt Vpp Min. voltage (00h = no Vpp pin present) Vpp Max. voltage (00h = no Vpp pin present) Typical timeout per single byte/word write 2^N µs Typical timeout for Min, size buffer write 2^N µs (00h = not supported) Typical timeout per individual block erase 2^N ms Typical timeout for full chip erase 2^N ms (00h = not supported) Max. timeout for byte/word write 2^N times typical Max. timeout for buffer write 2^N times typical Max. timeout per individual block erase 2^N times typical Max timeout for full chip erase 2^N times typical (00h = not supported) Table 7. Device Geometry Definition Addresses (Word mode) 27h Addresses (Byte Mode) 4Eh Data 0015h Description Device Size = 2^N byte This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h 0002h 0000h 0000h 0000h 0004h 0000h 0000h 0040h 0000h 0001h 0000h 0020h 0000h 0000h 0000h 0080h 0000h 001Eh 0000h 0000h 0001h Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2^N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification of CFI publication 100) Erase Block Region 2 Information Erase Block Region 3 Information Erase Block Region 4 Information Table 8. Primary Vendor-specific Extended Query Adresses (Word Mode) 40h 41h 42h 43h 44h Addresses (Byte Mode) 80h 82h 84h 86h 88h Data 0050h 0052h 0049h 0031h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h 0004h 4Ah 94h 0000h 4Bh 96h 0000h 4Ch 98h 0000h Description Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 0 = Required, 1 = Not Required Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 01 = 29F040 mode, 02 = 29F016 mode, 03 = 29F400 mode, 04 = 29LV800A mode Simultaneous Operation 00 = Not Supported, 01 = Supported Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Hardware Data protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes as seen in the Command Definitions table. Additionally, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by false system level signals during Vcc power up and power down transitions, or from system noise. Low VCC Write Inhibit When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc power up and power down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO. Write Pulse “Glitch” protection Noise pulses of less than 5 ns (typical) on OE , CE or W E do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE = VIL, CE = VIH, or W E = VIH. To initiate a write cycle, CE and W E must be a logical zero while OE is a logical one. If CE , W E , and OE are all logical zero (not recommended usage), it will be considered a read. Power-up Write Inhibit During power-up, the device automatically resets to READ mode and locks out write cycles. Even with CE = VIL, W E = VIL and OE = VIH, the device will not accept commands on the rising edge of WE. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 12 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 COMMAND DEFINITIONS The operations of the EN29LV160 are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. The sequences for the specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values or improper sequences will reset the device to Read Mode. Table 9. EN29LV160 Command Definitions Cycles Bus Cycles Command Sequence Read Reset Autoselect Manufacturer ID 1 1 Word RA xxx 4 Word Byte Device ID Bottom Boot Word Byte 4 4 555 AAA Byte Word Byte Word Unlock Bypass Byte Unlock Bypass Program Unlock Bypass Reset Word Chip Erase Byte Word Sector Erase Byte Erase Suspend Erase Resume AA AA 3 2 2 6 6 1 1 555 AAA 555 AAA XXX XXX 555 AAA 555 AAA xxx xxx th 6 Write Cycle Add Data 2AA 555 2AA 555 2AA 555 55 555 AAA 10 55 SA 30 55 2AA 555 2AA 555 2AA AA AAA 4 th 5 Write Cycle Add Data 555 555 4 th 4 Write Cycle Add Data AA 555 AAA rd 3 Write Cycle Add Data RD F0 AAA Word Program nd Write Cycle Add Data 2 555 Byte Device ID Top Boot Sector Protect Verify st 1 Write Cycle Add Data 55 55 AA A0 90 AA AA 555 AAA 555 AAA 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 90 90 555 55 555 AA 90 AAA 90 AAA 55 55 555 AAA 555 AAA A0 000/ 100 000/ 200 x01 x02 7F/ 1C 7F/ 1C x01 2249 x02 (SA) X02 (SA) X04 49 XX00 XX01 00 01 PA PD 22C4 C4 20 PD 00 55 55 555 AAA 555 AAA 80 80 555 AAA 555 AAA AA AA B0 30 Address and Data values indicated in hex RA = Read Address: address of the memory location to be read. This is a read cycle. RD = Read Data: data read from location RA during Read operation. This is a read cycle. PA = Program Address: address of the memory location to be programmed. X = Don’t-Care PD = Program Data: data to be programmed at location PA SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector. Reading Array Data The device is automatically set to reading array data after power up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data using the standard read timings, with the only difference in that if it reads at an address within erase suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See next section for details on Reset. Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don’tcare for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This is an alternative to the method that requires VID on address bit A9 and is intended for PROM programmers. Two unlock cycles followed by the autoselect command initiate the autoselect command sequence. Autoselect mode is then entered and the system may read at addresses shown in Table 4 any number of times, without needing another command sequence. The system must write the reset command to exit the autoselect mode and return to reading array data. Word / Byte Programming Command The device may be programmed by byte or by word, depending on the state of the Byte# Pin. Programming the EN29LV160 is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary. An internal timer terminates the program operation automatically. Address is latched on the falling edge of CE or W E , whichever is last; data is latched on the rising edge of CE or W E , whichever is first. Programming status may be checked by sampling data on DQ7 ( DATA polling) or on DQ6 (toggle bit). ). When the program operation is successfully completed, the device returns to read mode and the user can read the data programmed to the device at that address. Note that data can not be programmed from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When programming time limit is exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read mode. Unlock Bypass To speed up programming operation, the Unlock Bypass Command may be used. Once this feature is activated, the shorter two cycle Unlock Bypass Program command can be used instead of the normal four cycle Program Command to program the device. This mode is exited after issuing the Unlock Bypass Reset Command. The device powers up with this feature disabled. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 14 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Chip Erase Command Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Embedded Chip Erase algorithm are ignored. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Erase Suspend / Resume Command The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erasesuspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more information. The Autoselect command is not supported during Erase Suspend Mode. The system must write the Erase Resume command (address bits are don’t-care) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. WRITE OPERATION STATUS DQ7 DATA Polling The EN29LV160 provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the Byte Programming, Sector Erase, Chip Erase, Erase Suspend. (See Table 6) When the Byte Programming is in progress, an attempt to read the device will produce the complement of the data last written to DQ7. Upon the completion of the Byte Programming, an attempt to read the device will produce the true data last written to DQ7. For the Byte Programming, DATA polling is valid after the rising edge of the fourth WE or C E pulse in the four-cycle sequence. When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7 output during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth W E or CE pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last rising edge of the sector erase W E or C E pulse. DATA Polling must be performed at any address within a sector that is being programmed or erased and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the address used is in a protected sector. Just prior to the completion of the embedded operations, DQ7 may change asynchronously when the output enable ( OE ) is low. This means that the device is driving status information on DQ7 at one instant of time and valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status of valid data. Even if the device has completed the embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid. The valid data on DQ0-DQ7 will be read on the subsequent read attempts. The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing diagram is shown in Figure 8. RY/BY: Ready/Busy The RY/BY is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE pulse in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc. In the output is low, signifying Busy, the device is actively erasing or programming. This includes programming in the Erase Suspend mode. If the output is high, signifying the Ready, the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 16 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 DQ6 Toggle Bit I The EN29LV160 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling OE or CE ) will result in DQ6 toggling between “zero” and “one”. Once the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the rising edge of the fourth WE pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after the last rising edge of the Sector Erase W E pulse. In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 µs, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all selected blocks are protected, DQ6 will toggle for about 100 µs. The chip will then return to the read mode without changing data in all protected blocks. Toggling either CE or OE will cause DQ6 to toggle. The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown in Figure 9. DQ5 Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. Since it is possible that DQ5 can become a 1 when the device has successfully completed its operation and has returned to read mode, the user must check again to see if the DQ6 is toggling after detecting a “1” on DQ5. The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.” Under both these conditions, the system must issue the reset command to return the device to reading array data. DQ3 Sector Erase Timer After writing a sector erase command sequence, the output on DQ3 can be used to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) When sector erase starts, DQ3 switches from “0” to “1.” This device does not support multiple sector erase command sequences so it is not very meaningful since it immediately shows as a “1” after the first 30h command. Future devices may support this feature. DQ2 Erase Toggle Bit II The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 17 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 status bits are required for sector and mode information. Refer to Table 5 to compare outputs for DQ2 and DQ6. Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm. See also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Flowchart 6). Write Operation Status Standar d Mode Erase Suspend Mode Operation DQ7 DQ6 DQ5 DQ3 DQ2 RY/BY # Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0 1 No Toggle 0 N/A Toggle 1 Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend Program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 18 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 10. Status Register Bits DQ Name Logic Level Definition Erase Complete or erase Sector in Erase suspend Erase On-Going Program Complete or data of non-erase Sector during Erase Suspend ‘1’ ‘0’ 7 6 DATA POLLING TOGGLE BIT DQ7 DQ7# ‘-1-0-1-0-1-0-1-’ DQ6 Program On-Going Erase or Program On-going Read during Erase Suspend Erase Complete ‘-1-1-1-1-1-1-1-‘ 5 ERROR BIT 3 ERASE TIME BIT 2 TOGGLE BIT ‘1’ ‘0’ ‘1’ ‘0’ Program or Erase Error Program or Erase On-going Erase operation start Erase timeout period on-going Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently addressed Sector. Program during Erase Suspend ongoing at current address ‘-1-0-1-0-1-0-1-’ Erase Suspend read on non Erase Suspend Sector DQ2 Notes: DQ7 DATA Polling: indicates the P/E status check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged. Successive reads output complementary data on DQ6 while programming or Erase operation are on-going. DQ5 Error Bit: set to “1” if failure in programming or erase DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES). DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 19 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 EMBEDDED ALGORITHMS Flowchart 1. Embedded Program START Write Program Command Sequence (shown below) Data Poll Device Verify Data? Increment Address Last No Address? Yes Programming Done Flowchart 2. Embedded Program Command Sequence See the Command Definitions section for more information. 555H / AAH 2AAH / 55H 555H / A0H PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 20 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Flowchart 3. Embedded Erase START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 21 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Flowchart 4. Embedded Erase Command Sequence See the Command Definitions section for more information. Chip Erase Sector Erase 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/80H 555H/80H 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/10H Sector Address/30H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 22 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Flowchart 5. DATA Polling Algorithm Start Read Data DQ7 = Data? Yes No No DQ5 = 1? Yes Read Data (1) Notes: (1) This second read is necessary in case the first read was done at the exact instant when the status data was in transition. DQ7 = Data? Yes No Fail Pass Start Flowchart 6. Toggle Bit Algorithm Read Data twice DQ6 = Toggle? No Yes No DQ5 = 1? Yes Read Data twice (2) Notes: (1) This second set of reads is necessary in case the first set of reads was done at the exact instant when the status data was in transition. DQ6 = Toggle? Yes Fail This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. No 23 Pass ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Flowchart 7a. In-System Sector Protect Flowchart START PLSCNT = 1 RESET# = VID Wait 1 µs No First Write Cycle = 60h? Temporary Sector Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector addr with A6 = 0, A1 = 1, A0 = 0 Wait 150 µs Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Increment PLSCNT Reset PLSCNT = 1 Wait 0.4 µs Read from sector address with A6 = 0, A1 = 1, A0 No PLSCNT = 25? No Data = 01h? Yes Yes Device failed Protect another sector? Yes No Remove VID from RESET# Write reset command Sector Protect Algorithm Sector Protect complete This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 24 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Flowchart 7b. In-System Sector Unprotect Flowchart START PLSCNT = 1 Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address (see Diagram 7a.) RESET# = VID Wait 1 µS No Temporary Sector Unprotect Mode First Write Cycle = 60h? Yes No All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60H to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 15 ms Increment PLSCNT Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 =0 Wait 0.4 µS No PLSCCNT = 1000? Sector Unprotect Algorithm Read from sector address with A6 = 1, A1 = 1, A0 = 0 No Yes Yes Device failed Set up next sector address Data = 00h? Last sector verified? No Yes Remove VID from RESET# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 25 Write reset command Sector Unprotect complete ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 11. DC Characteristics (Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V) Symbol Parameter Test Conditions ILI Input Leakage Current ILO Output Leakage Current ICC1 Supply Current (read) CMOS Byte (read) CMOS Word Supply Current (Standby - TTL) ICC2 (Standby - CMOS) Max Unit 0V≤ VIN ≤ Vcc ±5 µA 0V≤ VOUT ≤ Vcc ±5 µA CE# = VIL ; OE# = VIH ; f = 5MHZ CE# = VIH, BYTE# = RESET# = Vcc ± 0.3V (Note 1) CE# = BYTE# = RESET# = Vcc ± 0.3V (Note 1) Byte program, Sector or Chip Erase in progress ICC3 Supply Current (Program or Erase) VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage IOL = 4.0 mA Output High Voltage TTL IOH = -2.0 mA Output High Voltage CMOS IOH = -100 µA, VOH VID A9 Voltage (Electronic Signature) IID A9 Current (Electronic Signature) VLKO Supply voltage (Erase and Program lock-out) Min -0.5 0.7 x Vcc 0.85 x Vcc Vcc 0.4V 10.5 A9 = VID 2.3 Typ 9 16 mA 9 16 mA 0.4 1.0 mA 1 5.0 µA 20 30 mA 0.8 Vcc ± 0.3 0.45 V V 11.5 V 100 µA 2.5 V 1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages. 26 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 V V Notes This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. V EN29LV160 Test Conditions 3.3 V 2.7 kΩ Device Under Test CL 6.2 kΩ Note: Diodes are IN3064 or equivalent Test Specifications Test Conditions -70 -90 Output Load Unit 1 TTL Gate Output Load Capacitance, CL 30 100 pF Input Rise and Fall times 5 5 ns Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 0.0-3.0 0.0-3.0 V 1.5 1.5 V 1.5 1.5 V AC CHARACTERISTICS Hardware Reset (Reset#) Parameter Std tREADY tREADY tRP tRH Description Reset# Pin Low to Read or Write Embedded Algorithms Reset# Pin Low to Read or Write Non Embedded Algorithms Reset# Pulse Width Reset# High Time Before Read This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 27 Test Setup Speed options -70 -90 Unit Max 20 µs Max 500 nS Min Min 500 50 nS nS ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Reset# Timings RY/BY# 0V CE# OE# tRH RESET# tRP tREADY Reset Timings NOT During Automatic Algorithms RY/BY# tREADY CE# OE# RESET# tRP tRH Reset Timings During Automatic Algorithms This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 28 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 AC CHARACTERISTICS Word / Byte Configuration (Byte#) Speed Std Parameter tBCS tCBH tRBH Description Byte# to CE# switching setup time CE# to Byte# switching hold time RY/BY# to Byte# switching hold time Min Min Min -70 0 0 0 -90 0 0 0 CE OE Byte tCBH tBCS Byte timings for Read Operations CE WE Byte tRBH tBCS RY/BY Byte timings for Write Operations Note: Switching BYTE# pin not allowed during embedded operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 29 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 Unit ns ns ns EN29LV160 Table 12. AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbols JEDEC Standard Description tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay CE = VIL OE = VIL tELQV tCE Chip Enable To Output Delay OE = VIL tGLQV tOE tEHQZ Speed Options Test Setup Min -70 70 -90 90 Unit ns Max 70 90 ns Max 70 90 ns Output Enable to Output Delay Max 30 35 ns tDF Chip Enable to Output High Z Max 20 20 ns tGHQZ tDF Output Enable to Output High Z Max 20 20 ns tAXQX tOH Output Hold Time from Min 0 0 ns Notes: For - 70 Addresses, CE or OE , whichever occurs first Vcc = 3.0V ± 5% Output Load : 1 TTL gate and 30pF Input Rise and Fall Times: 5ns Input Rise Levels: 0.0 V to 3.0 V Timing Measurement Reference Level, Input and Output: 1.5 V For all others: Vcc = 2.7V – 3.6V Output Load: 1 TTL gate and 100 pF Input Rise and Fall Times: 5 ns Input Pulse Levels: 0.45 V to .8 x Vcc Timing Measurement Reference Level, Input and Output: 0.8 V and .7 x Vcc tRC Addresses Stable Addresses tACC CE# tDF tOE OE# tOEH WE# tCE tOH Outputs Output Valid HIGH Z Reset# RY/BY# 0V Figure 5. AC Waveforms for READ Operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 30 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 13. AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Symbols Speed Options JEDEC Standard Description tAVAV tWC Write Cycle Time tAVWL tAS tWLAX -70 -90 Unit Min 70 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 45 45 ns tDVWH tDS Data Setup Time Min 30 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns MIn 0 0 ns Min 10 10 ns Min 0 0 ns tOEH Read Toggle and DATA Polling Read Recovery Time before Output Enable Hold Time tGHWL tGHWL tELWL tCS CE SetupTime Min 0 0 ns tWHEH tCH CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 45 45 ns tWHDL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Programming Operation (Word AND Byte Mode) Typ 8 8 µs Max 300 300 µs Typ 0.5 0.5 s Max 10 10 s Typ 17.5 17.5 s Write ( OE High to W E Low) tWHWH2 tWHWH2 Sector Erase Operation tWHWH3 tWHWH3 Chip Erase Operation tVCS Vcc Setup Time Min 50 50 µs tVIDR Rise Time to VID Min 500 500 ns Max This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 s ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 14. AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE Controlled Writes Parameter Symbols JEDEC Standard Description tAVAV tWC Write Cycle Time tAVEL tAS tELAX Speed Options -70 -90 Unit Min 70 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 45 45 ns tDVEH tDS Data Setup Time Min 30 45 ns tEHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tOEH Output Enable 0 0 0 ns 10 10 10 ns Min 0 0 ns Min 0 0 ns Min 0 0 ns Min 35 45 ns Min 20 20 ns Typ 8 8 µs Max 300 300 µs Typ 0.5 0.5 s Max 10 10 s Typ 17.5 17.5 s Read Hold Time Toggle and Data Polling Read Recovery Time before Write ( OE High to CE Low) tGHEL tGHEL tWLEL tWS W E SetupTime tEHWH tWH W E Hold Time tELEH tCP Write Pulse Width tEHEL tCPH Write Pulse Width High tWHWH1 tWHWH1 tWHWH2 tWHWH2 tWHWH3 tWHWH3 Programming Operation (Byte AND word mode) Sector Erase Operation Chip Erase Operation Max tVCS tVIDR Vcc Setup Time Rise Time to VID This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 32 s Min 50 50 µs Min 500 500 ns ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Table 15. ERASE AND PROGRAMMING PERFORMANCE Typ Limits Max Unit Sector Erase Time 0.5 10 sec Chip Erase Time 17.5 Byte Programming Time 8 300 µs Word Programming Time 8 300 µs Byte 16.8 50.4 Word 8.4 25.2 Parameter Chip Programming Time Erase/Program Endurance Comments Excludes 00H programming prior to erasure sec Excludes system level overhead sec 100K Minimum 100K cycles cycles Table 16. LATCH UP CHARACTERISTICS Parameter Description Input voltage with respect to Vss on all pins except I/O pins (including A9, Reset and OE ) Min Max -1.0 V 12.0 V Input voltage with respect to Vss on all I/O Pins -1.0 V Vcc + 1.0 V Vcc Current -100 mA 100 mA Note : These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute Maximum ratings for the actual operating limits. Table 17. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Table 18. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Minimum Pattern Data Retention Time This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 AC CHARACTERISTICS Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles) tWC Addresses tAS 0x2AA Read Status Data (last two cycles) tAH SA VA VA 0x555 for chip erase CE# tGHWL OE# tCH tWP WE# tWPH tCS tWHWH2 or tWHWH3 0x55 Data tDS 0x30 tDH Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes: 1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address. 2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 34 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Figure 7. Program Operation Timings Program Command Sequence (last 2 cycles) tWC Addresses tAS 0x555 Program Command Sequence (last 2 cycles) tAH PA PA PA CE# tGHWL OE# tWP WE# tCH tWPH tWHWH1 tCS Data PD OxA0 Status tDS tRB tBUSY tDH DOUT RY/BY# tVCS VCC Notes: 1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address. 2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 35 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations tRC Addresses VA VA VA tACC tCH tCE CE# tOE OE# tOEH tDF WE# tOH DQ[7] Complement DQ[6:0] Complement Status Data Status Data True Valid Data True Valid Data tBUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# Polling status data 2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle. Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations tRC Addresses VA VA VA VA tACC tCH tCE CE# tOE OE# tOEH WE# tDF tOH Valid Status Valid Status DQ6, DQ2 tBUSY (first read) (second d) Valid Status Valid Data (stops toggling) RY/BY# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 36 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Figure 10. Alternate CE# Controlled Write Operation Timings 0x555 for Program 0x2AA for Erase PA for Program SA for Sector Erase 0x555 for Chip Erase Addresses VA tWC tAS tAH WE# tWH tGHEL OE# tCP tWS tCPH tCWHWH1 / tCWHWH2 / tCWHWH3 CE# tDS tBUSY tDH Status Data DOUT PD for Program 0x30 for Sector Erase 0x10 for Chip Erase 0xA0 for Program RY/BY# tRH Reset# Notes: PA = address of the memory location to be programmed. PD = data to be programmed at byte address. VA = Valid Address for reading program or erase status Dout = array data read at VA Shown above are the last two cycles of the program or erase command sequence and the last status read cycle Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence. Figure 11. DQ2 vs. DQ6 Enter Embedded Erase WE# Enter Erase Suspend Program Erase Suspend Erase Enter Suspend Read Erase Resume Enter Suspend Program Erase Suspend Read Erase DQ6 DQ2 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 37 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 Erase Complete EN29LV160 Temporary Sector Unprotect Parameter Std tVIDR tRSP Speed Option -70 -90 Unit Min 500 Ns Min 4 µs Description VID Rise and Fall Time RESET# Setup Time for Temporary Sector Unprotect Figure 12. Temporary Sector Unprotect Timing Diagram VID RESET# 0 or 3 V 0 or 3 V tVIDR tVIDR CE# WE# tRSP RY/BY# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 38 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Figure 13. Sector Protect/Unprotect Timing Diagram VID RESET# Vcc 0V 0V tVIDR tVIDR SA, A6,A1,A0 Data 60h Valid Valid Valid 60h 40h Status Sector Protect/Unprotect Verify CE# >0.4µS WE# >1µS Sector Protect: 150 uS Sector Unprotect: 15 mS OE# Notes: Use standard microprocessor timings for this device for read and write cycles. For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 39 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 40 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 41 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 FIGURE 15. 48TFBGA package outline This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Storage Temperature -65 to +125 °C Plastic Packages -65 to +125 °C -55 to +125 °C 200 MA A9, OE#, Reset# 2 -0.5 to +11.5 V All other pins 3 -0.5 to Vcc+0.5 V Vcc -0.5 to +4.0 V Ambient Temperature With Power Applied Output Short Circuit Current1 Voltage with Respect to Ground Notes: 1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. 2. Minimum DC input voltage on A9, OE#, RESET# pins is –0.5V. During voltage transitions, A9, OE#, RESET# pins may undershoot Vss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods up to 20ns. 3. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below. 4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. RECOMMENDED OPERATING RANGES1 Parameter Ambient Operating Temperature Commercial Devices Industrial Devices Unit 0 to 70 -40 to 85 °C Regulated Voltage Range: 3.0-3.6V Operating Supply Voltage Vcc 1. Value Full Voltage Range: 2.7 to 3.6V V Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed. Vcc +1.5V Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 43 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ORDERING INFORMATION EN29LV160 T- 70 T C P PACKAGING CONTENT (Blank) = Conventional P = Pb Free TEMPERATURE RANGE (Blank) = Commercial (0°C to +70°C) I = Industrial (-40°C to +85°C) PACKAGE T = 48-pin TSOP B = 48-Ball Fine Pitch Ball Grid Array (FBGA) 0.80mm pitch, 6mm x 8mm package SPEED 70 = 70ns 90 = 90ns BOOT CODE SECTOR ARCHITECTURE T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = EON Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 160 = 16 Megabit (2M x 8 / 1M x 16) This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 44 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Revisions List Revision No Description Date A Preliminary draft 3/30/2004 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 45 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30