Mitsubishi CM300DU-34KA Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
CM300DU-34KA
● IC ................................................................... 300A
● VCES .......................................................... 1700V
● Insulated
Type
● 2-elements in a pack
APPLICATION
General purpose inverters & Servo controlers, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
140
130
10
110 ±0.25
43.8
13.8 11.5
14.5
130
40
110 ±0.25
E2
9
Tc measured
point
4-M4 NUTS
Tc measured
point
G1
(15)
4-φ6.5MOUNTING
C2E1
E2
C1
G1 E1
+1
35 -0.5
+1
24.5 -0.5
E2 G2
HOLES
8
65
3-M8 NUTS
14.5
E1
C1
(26)
E2
(26)
C2E1
20
(26)
G2
(15)
20.4
10
36
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1700
±20
300
600
300
600
1500
–40 ~ +150
–40 ~ +125
3500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
1200
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
G(E) Terminal M4 screw
Typical value
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 30mA, VCE = 10V
4
5.5
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.2
3.8
—
—
—
1350
—
—
—
—
—
11.2
—
2.2
—
—
0.010
—
0.5
4.0
—
42
7.2
2.3
—
800
300
1000
800
600
—
4.6
—
0.083
0.13
—
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
Tj = 25°C
Tj = 125°C
IC = 300A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 1000V, IC = 300A, VGE = 15V
VCC = 1000V, IC = 300A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 300A
IE = 300A, VGE = 0V, Tj = 25°C
IE = 300A, VGE = 0V, Tj = 125°C
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
mA
0.035*3
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
V
K/W
K/W
K/W
K/W
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
600
12
COLLECTOR CURRENT (A)
VGE = 20V
500
15
400
10
14
300
9
200
8
100
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
600
11
0
2
4
6
8
400
300
200
100
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
Tj = 25°C
5
Tj = 125°C
4
3
2
1
0
0
100
200
300
400
500
600
Tj = 25°C
8
6
IC = 600A
4
IC = 300A
2
0
IC = 120A
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
20
102
CAPACITANCE Cies, Coes, Cres (nF)
Tj = 25°C
7
5
3
2
102
7
5
3
2
101
10
COLLECTOR CURRENT IC (A)
103
EMITTER CURRENT IE (A)
VCE = 10V
Tj = 25°C
500
Tj = 125°C
0
10
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
Tj = 25°C
1
2
3
4
5
7
5
3
2
Cies
101
7
5
3
2
Coes
100
Cres
7
5
3
2
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
104
7
5
3
2
tf
td(off)
td(on)
103
7
5
3
2
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
102
7
5
3
2
tr
101 1
10
2
3
5 7 102
2
3
5 7 103
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
trr
102
Irr
7
5
2
101 1
10
COLLECTOR CURRENT IC (A)
7
5
3
2
10–3
GATE-EMITTER VOLTAGE VGE (V)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c) (ratio)
10–1
7
5
3
2
10–2
10–2
7
5
3
2
Single Pulse
TC = 25°C
5 7 102
2
3
5 7 103
20
3
2
7
5
3
2
3
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.083K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.13K/W
100
10–1
2
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
7
5
3
2
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load
3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
IC = 300A
16
VCC = 1000V
12
8
4
0
TIME (s)
VCC = 800V
0
400
800
1200
1600
2000
GATE CHARGE QG (nC)
Feb. 2009
4
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