MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE CM300DU-34KA ● IC ................................................................... 300A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 10 110 ±0.25 43.8 13.8 11.5 14.5 130 40 110 ±0.25 E2 9 Tc measured point 4-M4 NUTS Tc measured point G1 (15) 4-φ6.5MOUNTING C2E1 E2 C1 G1 E1 +1 35 -0.5 +1 24.5 -0.5 E2 G2 HOLES 8 65 3-M8 NUTS 14.5 E1 C1 (26) E2 (26) C2E1 20 (26) G2 (15) 20.4 10 36 CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1700 ±20 300 600 300 600 1500 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Unit V V A A A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — — 3.2 3.8 — — — 1350 — — — — — 11.2 — 2.2 — — 0.010 — 0.5 4.0 — 42 7.2 2.3 — 800 300 1000 800 600 — 4.6 — 0.083 0.13 — µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance Tj = 25°C Tj = 125°C IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 300A, VGE = 15V VCC = 1000V, IC = 300A VGE = ±15V RG = 3.1Ω, Inductive load IE = 300A IE = 300A, VGE = 0V, Tj = 25°C IE = 300A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips mA 0.035*3 V nF nF nF nC ns ns ns ns ns µC V V K/W K/W K/W K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 600 12 COLLECTOR CURRENT (A) VGE = 20V 500 15 400 10 14 300 9 200 8 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 600 11 0 2 4 6 8 400 300 200 100 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 0 100 200 300 400 500 600 Tj = 25°C 8 6 IC = 600A 4 IC = 300A 2 0 IC = 120A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 102 7 5 3 2 101 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) VCE = 10V Tj = 25°C 500 Tj = 125°C 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 2 3 4 5 7 5 3 2 Cies 101 7 5 3 2 Coes 100 Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) 104 7 5 3 2 tf td(off) td(on) 103 7 5 3 2 Conditions: VCC = 1000V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 102 7 5 3 2 tr 101 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 trr 102 Irr 7 5 2 101 1 10 COLLECTOR CURRENT IC (A) 7 5 3 2 10–3 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 10–1 7 5 3 2 10–2 10–2 7 5 3 2 Single Pulse TC = 25°C 5 7 102 2 3 5 7 103 20 3 2 7 5 3 2 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.083K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.13K/W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 Conditions: VCC = 1000V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 IC = 300A 16 VCC = 1000V 12 8 4 0 TIME (s) VCC = 800V 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Feb. 2009 4