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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSB50450B / FSB50450BS Motion SPM® 5 Series Features Related Source • UL Certified No. E209204 (UL1557) • RD-FSB50450AS - Reference Design for Motion SPM 5 Series Ver.2 • Optimized for over 10 kHz Switching Frequency • AN-9082 - Motion SPM5 Series Thermal Performance by Contact Pressure • 500 V FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection • Built-In Bootstrap Diodes Simplify PCB Layout • Separate Open-Source Pins from Low-Side MOSFETs for Three-Phase Current-Sensing General Description The FSB50450B / FSB50450BS is an advanced Motion SPM® 5 module providing a fully-featured, highperformance inverter output stage for AC Induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in MOSFETs (FRFET® technology) to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts and thermal monitoring. The built-in high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open-source MOSFET terminals are available for each phase to support the widest variety of control algorithms. • Active-HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt-trigger Input • Optimized for Low Electromagnetic Interference • HVIC Temperature-Sensing Built-In for Temperature Monitoring • HVIC for Gate Driving and Under-Voltage Protection • Isolation Rating: 1500 Vrms / min. • RoHS Complia • Moisture Sensitive Level (MSL) 3 for SMD PKG Applications • 3-Phase Inverter Driver for Small Power AC Motor Drives < FSB50450B > <FSB50450BS > Figure 1. 3D Package Drawing (Click to Activate 3D Content) Package Marking & Ordering Information Device Device Marking Package Packing Type Reel Size Quantity FSB50450B FSB50450B SPM5P-023 Rail NA 15 FSB50450BS FSB50450BS SPM5Q-023 Tape & Reel 330mm 450 Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 1 FSB50450B / FSB50450BS Motion SPM® 5 Series February 2017 Inverter Part (each MOSFET unless otherwise specified.) Symbol Parameter Conditions Rating Unit VDSS Drain-Source Voltage of Each MOSFET 500 V *ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 2.2 A *ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 1.4 A *IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 μs 5.0 A *IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.0 Arms Rating Unit 20 V Control Part (each HVIC unless otherwise specified.) Symbol Parameter Conditions VDD Control Supply Voltage Applied between VDD and COM VBS High-side Bias Voltage Applied between VB and VS VIN Input Signal Voltage Applied between VIN and COM 20 V -0.3 ~ VDD + 0.3 V Rating Unit 500 V Bootstrap Diode Part (each bootstrap diode unless otherwise specified.) Symbol VRRMB Parameter Conditions Maximum Repetitive Reverse Voltage * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2.0 A Conditions Rating Unit Inverter MOSFET part, (Per Module) 2.3 °C/W Conditions Rating Unit Thermal Resistance Symbol Rth(j-c)Q Parameter Junction to Case Thermal Resistance ( Note1 ) Total System Symbol TJ Parameter Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 1500 Vrms 60 Hz, Sinusoidal, 1 Minute, Connect Pins to Heat Sink Plate Notes: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 2 FSB50450B / FSB50450BS Motion SPM® 5 Series Absolute Maximum Ratings FSB50450B / FSB50450BS Motion SPM® 5 Series Pin descriptions Pin Number Pin Name Pin Description 1 COM IC Common Supply Ground 2 VB(U) Bias Voltage for U-Phase High-Side MOSFET Driving 3 VDD(U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) Signal Input for U-Phase High-Side 5 IN(UL) 6 N.C No Connection 7 VB(V) Bias Voltage for V-Phase High Side MOSFET Driving 8 VDD(V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving 9 IN(VH) Signal Input for V-Phase High-Side 10 IN(VL) Signal Input for V-Phase Low-Side Signal Input for U-Phase Low-Side Output for HVIC Temperature Sensing 11 VTS 12 VB(W) 13 VDD(W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving 14 IN(WH) Signal Input for W-Phase High-Side 15 IN(WL) 16 N.C Bias Voltage for W-Phase High-Side MOSFET Driving Signal Input for W-Phase Low-Side No Connection 17 P 18 U, VS(U) Positive DC-Link Input 19 NU Negative DC-Link Input for U-Phase 20 NV Negative DC-Link Input for V-Phase 21 V, VS(V) 22 NW 23 W, VS(W) Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving Negative DC-Link Input for W-Phase Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving (1) COM (17) P (2) VB(U) (3) V DD(U) VDD VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS COM LO (18) U, V S(U) (6) N.C (19) N U (7) VB(V) (8) V DD(V) VDD VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS COM LO (11) V TS (20) N V (21) V, V S(V) V TS (12) V B(W) (13) V DD(W) VDD VB (14) IN (WH) HIN HO LIN VS COM LO (15) IN (WL) (22) N W (23) W, V S(W) (16) N.C Figure 2. Pin Configuration and Internal Block Diagram (Bottom View) Notes: 3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM® 5 product. External connections should be made as indicated in Figure 3. Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 3 Inverter Part (each MOSFET unless otherwise specified.) Symbol Parameter Conditions BVDSS Drain - Source Breakdown Voltage VIN = 0 V, ID = 1 mA ( Note 4) IDSS Zero Gate Voltage Drain Current RDS(on) VSD - - V VIN = 0 V, VDS = 500 V - - 1 mA Static Drain - Source Turn-On Resistance VDD = VBS = 15 V, VIN = 5 V, ID = 1.0 A - 4.3 5.3 Ω Drain - Source Diode Forward Voltage VDD = VBS = 15V, VIN = 0 V, ID = -1.0 A - - 1.3 V - 450 - ns - 500 - ns Switching Times VPN = 300 V, VDD = VBS = 15 V, ID = 1.0 A VIN = 0 V ↔ 5 V, Inductive Load L = 3 mH High- and Low-Side MOSFET Switching ( Note 5) - 70 - ns - 25 - μJ - 5 - μJ tON EON EOFF RBSOA Unit 500 tOFF trr Min Typ Max V = 400 V, VDD = VBS = 15 V, ID = IDP, VDS = BVDSS, Reverse Bias Safe Oper- PN TJ = 150°C ating Area High- and Low-Side MOSFET Switching ( Note 6) Full Square Control Part (each HVIC unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit IQDD Quiescent VDD Current VDD = 15 V, VIN = 0 V IQBS Quiescent VBS Current VBS = 15 V, VIN = 0 V Applied between VB(U) - U, VB(V) - V, VB(W) - W - - 100 μA IPDD Operating Current VDD Supply VDD - COM VDD = 15 V, fPWM = 20 kHz, duty = 50%, Applied to One PWM Signal Input for Low-Side - - 900 μA IPBS Operating Current VBS Supply VB(U) - VS(U), VB(V) VDD = VBS = 15 V, fPWM = 20 kHz, - VS(V), VB(W) - Duty = 50%, Applied to One PWM Signal Input for High-Side VS(W) - - 800 μA 7.4 8.0 9.4 V UVDDD UVDDR UVBSD UVBSR Applied between VDD and COM - - 200 μA Low-Side Under-Voltage Protection (Figure 8) VDD Under-Voltage Protection Detection Level VDD Under-Voltage Protection Reset Level 8.0 8.9 9.8 V High-Side Under-Voltage Protection (Figure 9) VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V 600 790 980 mV - - 2.9 V 0.8 - - V VTS HVIC Temperature Sensing Voltage Output VDD = 15 V, THVIC = 25°C ( Note 7) VIH ON Threshold Voltage Logic HIGH Level VIL OFF Threshold Voltage Logic LOW Level Applied between VIN and COM Bootstrap Diode Part (each bootstrap diode unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VFB Forward Voltage IF = 0.1 A, TC = 25°C ( Note 8) - 2.5 - V trrB Reverse Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 4 FSB50450B / FSB50450BS Motion SPM® 5 Series Electrical Characteristics (TJ = 25°C, VDD = VBS = 15 V unless otherwise specified.) Symbol Parameter VPN Supply Voltage VDD Control Supply Voltage VBS High-Side Bias Voltage Conditions Min. Typ. Max. Unit - 300 400 V Applied between VDD and COM 13.5 15.0 16.5 V Applied between VB and VS 13.5 15.0 16.5 V 3.0 - VDD V 0 - 0.6 V 1.0 - - μs - 15 - kHz Applied between P and N VIN(ON) Input ON Threshold Voltage VIN(OFF) Input OFF Threshold Voltage Applied between VIN and COM tdead Blanking Time for Preventing VDD = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C Arm-Short fPWM PWM Switching Frequency TJ ≤ 150°C Built-In Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 VF [V] 9 10 11 12 13 14 15 TC = 25°C Figure 3. Built-In Bootstrap Diode Characteristics (Typical) Notes: 4. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 5. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 6. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test circuit that is same as the switching test circuit. 7. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically. 8. Built-in bootstrap diode includes around 15 Ωresistance characteristic. Please refer to Figure 2. Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 5 FSB50450B / FSB50450BS Motion SPM® 5 Series Recommended Operating Condition C1 +15 V * Example Circuit : V phase VDC P MCU R5 C5 VDD VB HIN HO LIN VS COM LO V 10 μF C2 C4 LIN Output Note 0 0 Z Both FRFET Off 0 1 0 Low side FRFET On C3 1 0 VDC High side FRFET On 1 1 Forbidden Shoot through Open Open Z Same as (0,0) R3 N VTS HIN Inverter Output ® One Leg Diagram of Motion SPM 5 Product * Example of Bootstrap Paramters : C1 = C2 = 1 μF Ceramic Capacitor Figure 4. Recommended MCU Interface and Bootstrap Circuit with Parameters Notes: 9. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above. 10. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 11. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C1, C2 and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current. Figure 5. Case Temperature Measurement Notes: 12. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement. 3.5 3.0 VTS [V] 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 140 160 o THVIC [ C] Figure 6. Temperature Profile of V TS (Typical) Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 6 FSB50450B / FSB50450BS Motion SPM® 5 Series These values depend on PWM control algorithm VIN Irr VDS 120% of ID 100% of ID ID 10% of ID ID VDS tON trr tOFF (a) Turn-on (b) Turn-off Figure 7. Switching Time Definitions C BS VDD ID VDD VB HIN HO LIN VS COM LO L VDC + V DS - VTS ® One Leg Diagram of Motion SPM 5 Product Figure 8. Switching and RBSOA (Single-Pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low- side Supply, VDD RESET SET RESET UVDDR UVDDD MOSFET Current Figure 9. Under-Voltage Protection (Low-Side) Input Signal UV Protec tion Status High- side Supply, VBS RESET SET RESET UVBSR UVBSD MOSFET C urrent Figure 10. Under-Voltage Protection (High-Side) Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 7 FSB50450B / FSB50450BS Motion SPM® 5 Series VIN (2 ) VB(U) (3 ) VDD(U) R5 (4 ) IN(UH) (5 ) IN(UL) C5 C2 (6 ) N.C (17) P VDD VB HIN HO LIN VS COM LO (18) U , VS(U) C3 (19) NU (7 ) VB(V) (8 ) VDD(V) (9 ) IN(VH) Micom (10) IN(VL) (11) VTS (12) VB(W) (13) VDD(W) (14) IN(WH) (15) IN(WL) (16) N.C VDC VDD VB HIN HO LIN VS COM LO (20) NV (21) V , VS(V) M VTS VDD VB HIN HO LIN VS COM LO (22) NW (23) W , VS(W) C4 For current-sensing and protection 15 V Supply R4 C6 R3 Figure 11. Example of Application Circuit Notes: 13. About pin position, refer to Figure 1. 14. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 15. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the lowside MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state. 16. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC. 17. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current. Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 www.fairchildsemi.com www.onsemi.com 8 FSB50450B / FSB50450BS Motion SPM® 5 Series C1 (1 ) COM FSB50450B / FSB50450BS Motion SPM® 5 Series Detailed Package Outline Drawings ( FSB50450B ) Max 1.00 0.50 ?0.10 16X (0.20) 13X (1.165) (1.165) 15X1.778=26.67 ?0.30 (1.80) 13.34?0.30 0.60 0.4 5 13.34?0.30 (1.00) 16 17 23 14.55?0.3 0 14.00 ) 40 0. 12.00?0 .2 0 (R 1 6? 2?~ (2.275) 12.23 ?0.30 (1.375) 13.13?0.30 3.15?0.20 (6.05) 29.00 ?0.20 1.95?0.30 17 (0.30) 0.60?0.10 5X Max 1.00 2.48?0.30 19 3.90?0.30 4X 23 0.50 ?0.10 2X PIN19,20 2.95 ?0 .50 (0.17) 3.90?0.30 2X Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE DOES NOT COMPLY TO ANY CURRENT PACKAGING STANDARD B) ALL DIMENSIONS ARE IN MILLIMETERS C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D) ( ) IS REFERENCE E) [ ] IS ASS'Y QUALITY F) DRAWING FILENAME: MOD23DCREV4.0 G) FAIRCHILD SEMICONDUCTOR www.fairchildsemi.com www.onsemi.com 9 Max 1.00 0.60?0.10 16X (1.165) 15X1.778=26.67 ?0.30 (1.165) (1.80) 13.34?0.30 13.34?0.30 0.60 0.4 5 GAGE PLANE (2.275) 23 12.23 ?0.30 13.13?0.30 (2.50) 2~ 8? 0.30 0.05 17.00?0 .2 0 ) 40 0. 12.00?0 .2 0 (R 17 0.508 16 Max 3.50 1 (1.00) 1.50?0.20 SEATING PLANE (1.30) (1.375) 3.15?0.20 29.00 ?0.20 2.48?0.30 3.90?0.30 4X 7.55 3.90?0.30 2X 2.80 1.95?0.30 19 0.889 1 16 1.3 23 0.50 ?0.10 2X PIN19,20 3.90 2X 7.55 17 0.60?0.10 5X Max 1.00 1.778 15X NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE DOES NOT COMPLY TO ANY CURRENT PACKAGING STANDARD B) ALL DIMENSIONS ARE IN MILLIMETERS C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D) ( ) IS REFERENCE E) DRAWING FILENAME: MOD23DGREV6.0 F) FAIRCHILD SEMICONDUCTOR Semiconductor Components Industries, LLC, 2017 FSB50450B / FSB50450BS . Rev. 1.2 3.90 4X 17 23 1.95 2.475 LAND PATTERN RECOMMENDATIONS www.fairchildsemi.com www.onsemi.com 10 FSB50450B / FSB50450BS Motion SPM® 5 Series Detailed Package Outline Drawings ( FSB50450BS ) FSB50450B / FSB50450BS Motion SPM® 5 Series ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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