Red LED Chip OPA6916 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA V IF=20mA V IR=10uA 35 mcd IF=20mA 635 nm IF=20mA VF(1) 1.8 VF(2) 2.25 Reverse Voltage VR 8 Brightness Iv λd 30 Wavelength Max 2.4 ∆λ 100 nm IF=20mA ※ Note : Brightness is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10mil x 10mil --------------------- 11mil x 11mil --------------------- 115um --------------------- 11mil --------------------- 6.8mil (b) (d) (e) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (a) P Epi (c) Substrate 4. Mechanical Data (a) Emission Area N Side Electrode