NCE Power NCE8060D Nce n-channel enhancement mode power mosfet Datasheet

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NCE8060D
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NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE8060D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS = 80V,ID =60A
RDS(ON) < 12mΩ @ VGS=10V (Typ:10mΩ)
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
Marking and pin Assignment
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
TO-263-2L top view
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE8060D
NCE8060D
TO-263-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
80
V
±20
V
ID
60
A
ID (100℃)
40
A
Pulsed Drain Current
IDM
200
A
Maximum Power Dissipation
PD
130
W
0.86
W/℃
EAS
350
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
1.15
℃/W
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
80
85
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=80V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
-
10
12
mΩ
gFS
VDS=10V,ID=20A
20
-
-
S
-
2250
-
PF
-
418
-
PF
-
125
-
PF
-
15
-
nS
On Characteristics (Note 3)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=30A
-
94
-
nS
td(off)
VGS=10V,RGEN=6Ω
-
46
-
nS
-
32
-
nS
-
35
-
nC
-
11
-
nC
-
9
-
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=20A
-
-
1.2
V
Diode Forward Current (Note 2)
IS
-
-
-
90
A
Reverse Recovery Time
trr
TJ = 25°C, IF =10A
-
78
-
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
-
51
-
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
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NCE8060D
Test circuit
1)EAS test Circuits
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
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ID- Drain Current (A)
Normalized On-Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(Ω)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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C Capacitance (nF)
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TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
ID- Drain Current (A)
Power Dissipation (w)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
Power De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-263-2L PACKAGE INFORMATION
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.470
4.670
0.176
0.184
A1
0.000
0.150
0.000
0.006
B
1.170
1.370
0.046
0.054
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.310
0.530
0.012
0.021
c1
1.170
1.370
0.046
0.054
D
10.010
10.310
0.394
0.406
E
8.500
8.900
0.335
0.350
2.540(TYP.)
e
0.100(TYP.)
e1
4.980
5.180
0.196
0.204
L
15.050
15.450
0.593
0.608
L1
5.080
5.480
0.200
0.216
L2
2.340
2.740
0.092
0.108
L3
1.300
1.700
0.051
0.067
V
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NCE8060D
ATTENTION:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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