Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. TO-220F 1 1- G 2-D 3-S █ Features 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant • █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature -------------------------------------------------- 150℃ V DSS —— Drain-Source Voltage ----------------------------------------------------------600V VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 48W Derate Above 25℃ ------------------------------------------------------------------------- 0.38W/℃ EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 420mJ IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 4.8mJ dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------5.5V/ns █ Thermal Characteristics Symbol Rthj-case Items Thermal Resistance Junction-case TO-220F Max 2.6 Unit ℃/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 ℃/W HFF7N60 Shantou Huashan Electronic Devices Co., Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate – Body Leakage On Characteristics Gate Threshold Voltage VGS(th) 600 2.0 RDS(on) Static Drain-Source On-Resistance 0.91 Dynamic Characteristics and Switching Characteristics 1 V μA ID=250μA ,VGS=0V VDS =600V, VGS=0V 10 ±100 μA nA VDS =480V, VGS=0V,Tj=125℃ VGS= ±30V , VDS =0V 4.0 V VDS = VGS , ID=250μA 1.2 Ω VGS=10V, ID=3.5A Ciss Input Capacitance 970 1260 pF Coss Output Capacitance 80 110 pF Crss Reverse Transfer Capacitance 17 22 pF td(on) Turn - On Delay Time 20 40 nS Rise Time 55 110 nS Turn - Off Delay Time 90 180 nS Fall Time 60 120 nS Qg Total Gate Charge 40 52 nC Qgs Gate–Source Charge 6.5 nC Qgd Gate–Drain Charge 16.5 nC tr td(off) tf Drain-Source Diode Characteristics and Maximum Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage 7 A 28 A 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=15.7mH,IAS=7.0A, VDD=50V, RG=25 Ω ,Starting TJ=25℃ 3. ISD≤7.0A, di/dt≤300A/μS,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse width≤300μS, Duty Cycle≤2% 5. Essentially independent of operating temperature typical characteristics VDS = 25 V, VGS = 0V, f = 1.0 MHz VDS = 300V, ID=7A, RG= 25 Ω (Note 4,5) VDS=480V, ID=7A, VGS = 10 V (Note 4,5) IS=7A,VGS=0 Shantou Huashan Electronic Devices Co., Ltd. █ Typical Characteristics HFF7N60 Shantou Huashan Electronic Devices Co., Ltd. █ Typical Characteristics HFF7N60 Shantou Huashan Electronic Devices Co., Ltd. █ Typical Characteristics HFF7N60 Shantou Huashan Electronic Devices Co., Ltd. █ Typical Characteristics HFF7N60 HFF7N60 Shantou Huashan Electronic Devices Co., Ltd. █ Package Dimensions Symbol A A1 A2 (Φ) A3 B1 B2 B3 C C1 C2 Millimeters Min Nom Max 9.96 10.36 7.0 3.08 3.28 9.26 9.66 15.67 16.07 4.50 4.90 6.48 6.88 3.20 3.40 15.60 16.00 9.55 9.95 Symbol D D1 D2 D3 E E1 E2 E3 E4 α(°) Min Millimeters Nom 2.54 Max 1.47 0.90 0.45 2.74 0.70 0.25 2.34 0.70 1.0×45° 0.45 2.56 2.76 30° 0.60 2.96