BAS16WS Silicon Epitaxial Planar Switching Diode Features • Fast switching diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IF 250 mA IFSM 0.5 1 2 A Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O Symbol Max. Forward Current (Continuous) Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Leakage Current at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω 0.715 0.855 1 1.25 1 30 50 Unit V µA Ctot 2 pF trr 6 ns BAS16WS BAS16WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30