LL41 Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. Cathode Mark .142 (3.6) .134 (3.4) ∅ .063 (1.6) .055 (1.4) ♦ This diode features low turn-on .019 (0.48) .011 (0.28) voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ♦ This diode is also available in the DO-35 case with type designation BAT41. MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 100 V Forward Continuous Current at Tamb = 25 °C IF 1001) mA Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C IFRM 3501) mA Surge Forward Current at tp = 10 ms, Tamb = 25 °C ISFM 7501) mA Power Dissipation, Tamb = 25 °C Ptot 4001) mW Junction Temperature Tj 125 °C Ambient Operating Temperature Range Tamb –65 to +125 °C Storage Temperature Range TS –65 to +150 °C 1) Valid provided that electrodes are kept at ambient temperature. 4/98 LL41 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Test Conditions Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses V(BR)R 100 110 – V Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA VF VF – – 0.40 – 0.45 1.0 V V Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj = 25 °C at VR = 50 V, at Tj = 100 °C IR IR – – – – 100 20 nA µA Capacitance at VR = 1 V, f = 1 MHz Ctot – 2 – pF Reverse Recovery Time from IF = 10 mA, to IR = 10 mA to IR = 1 mA RL = 100 Ohm trr – 5 – ns Thermal Resistance Junction to Ambient Air RthJA – – 3001) K/W 1) Valid provided that electrodes are kept at ambient temperature.