DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. 1 cathode 2 anode handbook, halfpage1 APPLICATION • Low leakage current applications in surface mounted circuits. DESCRIPTION 2 Top view MAM408 Marking code: S1. The marking bar indicates the cathode. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. Fig.1 Simplified outline (SOD523; SC-79) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME − BAS716 DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD523 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 85 V − 75 V − 200 mA − 500 mA tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A − 250 mW VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 see Fig.2; note 1 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on a FR4 printed-circuit board. 2003 Nov 07 2 NXP Semiconductors Product data sheet Low-leakage diode BAS716 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT IF = 1 mA 0.77 0.9 V IF = 10 mA 0.85 1 V IF = 50 mA 0.92 1.1 V IF = 150 mA 1.02 1 .25 V VR = 75 V 0.2 5 nA VR = 75 V; Tj = 150 °C 3 80 nA VR = 100 V 0.3 − nA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA 0.6 3 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W Rth j-s thermal resistance from junction to soldering point note 2 120 K/W Notes 1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions. 2. Soldering point of the cathode tab. 2003 Nov 07 3 NXP Semiconductors Product data sheet Low-leakage diode BAS716 GRAPHICAL DATA MHC323 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 100 100 (1) (2) (3) 0 0 0 100 Tamb (°C) 0 200 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on a FR4 printed-circuit board. Fig.2 0.4 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Nov 07 4 104 NXP Semiconductors Product data sheet Low-leakage diode BAS716 MDB826 102 handbook, halfpage MDB827 2.0 handbook, halfpage Cd (pF) IR (nA) (1) 1.5 10 1.0 (2) 1 0.5 10−1 0 50 100 150 Tj (°C) 0 200 0 VR = 75 V. (1) Maximum values. (2) Typical values. Fig.5 5 10 15 V (V) 20 R f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.6 handbook, full pagewidth tr Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. 2003 Nov 07 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage diode BAS716 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 2003 Nov 07 REFERENCES IEC JEDEC JEITA SC-79 6 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13 NXP Semiconductors Product data sheet Low-leakage diode BAS716 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Nov 07 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp8 Date of release: 2003 Nov 07 Document order number: 9397 750 11999